RF Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
MMBFJ310LT1G	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Matte Tin (Sn) - annealed		DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260	2.5 pF
D2081UK	Tt Electronics Plc	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V	11 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOW NOISE			NOT SPECIFIED	NOT SPECIFIED	.5 pF
SMMBFJ310LT1G	Onsemi	N-CHANNEL		YES	.225 W													Other Transistors	JUNCTION		150 Cel			MATTE TIN				1					e3	30	260
MMBF4416A	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	.8 pF
2N4416A	Texas Instruments	N-CHANNEL	SINGLE	NO	.3 W	METAL	AMPLIFIER	35 V	10 dB	WIRE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	CYLINDRICAL	Other Transistors	JUNCTION		200 Cel	SILICON				BOTTOM	O-MBCY-W4		ISOLATED	Not Qualified		TO-72		NOT SPECIFIED	NOT SPECIFIED	.8 pF
BF998E6327HTSA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		12 V		GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	.03 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		e3
MMBFJ309LT1G	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Matte Tin (Sn) - annealed		DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260	2.5 pF
MMBFJ310LT3G	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		MATTE TIN		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	2.5 pF
MMBF4416	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER		18 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	FET General Purpose Power	JUNCTION		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	.9 pF
2N3819	Texas Instruments	N-CHANNEL	SINGLE	NO	.36 W	PLASTIC/EPOXY		25 V		WIRE	ROUND	DEPLETION MODE	1			3	CYLINDRICAL	Other Transistors	JUNCTION		150 Cel	SILICON				BOTTOM	O-PBCY-W3			Not Qualified		TO-92		NOT SPECIFIED	NOT SPECIFIED	4 pF
NE3210S01-T1B	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	12 dB	GULL WING	UNSPECIFIED	DEPLETION MODE	1	KU BAND	.07 A	4	MICROWAVE	FET RF Small Signal	HETERO-JUNCTION	.165 W	125 Cel	SILICON		TIN LEAD	.015 A	UNSPECIFIED	X-PXMW-G4		SOURCE	Not Qualified			e0	30	230
2N4416	Texas Instruments	N-CHANNEL	SINGLE	NO	.3 W	METAL	AMPLIFIER	30 V	10 dB	WIRE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	CYLINDRICAL	Other Transistors	JUNCTION		200 Cel	SILICON				BOTTOM	O-MBCY-W4		ISOLATED	Not Qualified		TO-72		NOT SPECIFIED	NOT SPECIFIED	.8 pF
D2089UK	Tt Electronics Plc	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	DISK BUTTON		METAL-OXIDE SEMICONDUCTOR			SILICON		GOLD		RADIAL	O-CRDB-F4		SOURCE	Not Qualified	LOW NOISE		e4			.5 pF
ATF-55143-TR1G	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.1 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.27 W	150 Cel	SILICON		MATTE TIN	.1 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
ATF-551M4-TR1	Broadcom	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER	5 V	15.5 dB	NO LEAD	RECTANGULAR	DEPLETION MODE	1	X BAND		4	CHIP CARRIER	FET RF Small Signal	HIGH ELECTRON MOBILITY	.27 W	150 Cel	SILICON		GOLD	.1 A	BOTTOM	R-XBCC-N4	1		Not Qualified	LOW NOISE		e4		260
NE5550279A-T1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES		UNSPECIFIED		30 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.6 A	4	MICROWAVE		METAL-OXIDE SEMICONDUCTOR	6.25 W	150 Cel	SILICON			.6 A	QUAD	R-XQMW-F4		SOURCE
NE5550279A-A	Renesas Electronics	N-CHANNEL	SINGLE	YES		UNSPECIFIED		30 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.6 A	4	MICROWAVE		METAL-OXIDE SEMICONDUCTOR	6.25 W	150 Cel	SILICON			.6 A	QUAD	R-XQMW-F4		SOURCE
NE3210S01	Renesas Electronics	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER	3 V	12 dB	GULL WING	ROUND	DEPLETION MODE	1	KU BAND		4	DISK BUTTON		HETERO-JUNCTION			SILICON		TIN LEAD	.015 A	RADIAL	O-XRDB-G4		SOURCE	Not Qualified			e0	30	230
ATF-36163-BLKG	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	9.4 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	KU BAND	.04 A	6	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.18 W	150 Cel	GALLIUM ARSENIDE		MATTE TIN	.04 A	DUAL	R-PDSO-G6	1		Not Qualified	LOW NOISE		e3		260
SMMBFJ309LT1G	Onsemi	N-CHANNEL		YES	.225 W												SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel			MATTE TIN				1					e3	30	260
MMBF4416LT1G	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER	30 V	10 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	.8 pF
MMBF4416LT1	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER	30 V	10 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235	.8 pF
2SK197	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE		JUNCTION			SILICON			.02 A	DUAL	R-PDSO-G3			Not Qualified
J310	Vishay Intertechnology	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	SWITCHING	25 V		WIRE	ROUND	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	CYLINDRICAL		JUNCTION			SILICON		TIN LEAD		BOTTOM	O-PBCY-W3			Not Qualified	LOW NOISE	TO-226AA	e0			2.5 pF
CLF1G0035-100P	NXP Semiconductors
BF998WR,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	AMPLIFIER	12 V		GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.03 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.03 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified	LOW NOISE		e3	30	260
BF998R,215	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	AMPLIFIER	12 V		GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.03 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.03 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified	LOW NOISE		e3	30	260
TGF2023-2-01	Qorvo	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER			NO LEAD	RECTANGULAR	DEPLETION MODE	1	KU BAND			UNCASED CHIP		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE			1.25 A	UPPER	R-XUUC-N							NOT SPECIFIED	NOT SPECIFIED
BF998,215	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	AMPLIFIER	12 V		GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.03 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.03 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified	LOW NOISE		e3	30	260
MMBFJ310	Onsemi	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		MATTE TIN		DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	2.5 pF
CLF1G0035-100PU	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V		FLAT	RECTANGULAR	DEPLETION MODE	2	S BAND		4	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE				DUAL	R-CDFM-F4		SOURCE								IEC-60134
NE3210S01-T1B-A	Renesas Electronics	N-CHANNEL													.07 A			FET RF Small Signal		.165 W	125 Cel				.07 A
NE3515S02-T1C-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	.165 W	PLASTIC/EPOXY	AMPLIFIER	3 V	11 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	KU BAND		4	MICROWAVE	Other Transistors	HETERO-JUNCTION		125 Cel	SILICON			.025 A	QUAD	R-PQMW-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SMMBFJ310LT3G	Onsemi	N-CHANNEL		YES	.225 W													Other Transistors	JUNCTION		150 Cel			MATTE TIN				1					e3	30	260
ATF-54143-TR1G	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.12 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.725 W	150 Cel	GALLIUM ARSENIDE		MATTE TIN	.12 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
ATF-34143-TR1G	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5.5 V	16 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.725 W	160 Cel	SILICON		MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
BF545B	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	SWITCHING	30 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Tin (Sn)		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
NE3515S02-T1D-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	.165 W	PLASTIC/EPOXY	AMPLIFIER	3 V	11 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	KU BAND		4	MICROWAVE	Other Transistors	HETERO-JUNCTION		125 Cel	SILICON			.025 A	QUAD	R-PQMW-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BLF184XRS	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	135 V	22.8 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR			SILICON				DUAL	R-CDFP-F4		SOURCE								IEC-60134
MMBF5484LT1G	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER		16 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION	.225 W	150 Cel	SILICON	-55 Cel	TIN		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	1 pF
2N3819PBFREE	Central Semiconductor	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER	25 V		THROUGH-HOLE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	CYLINDRICAL		JUNCTION	.36 W	150 Cel	SILICON	-65 Cel	MATTE TIN OVER NICKEL		BOTTOM	O-PBCY-T3					TO-92	e3			4 pF
PMBFJ309,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260	2.5 pF
BLF521	NXP Semiconductors	N-CHANNEL	SINGLE	YES	10 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	40 V	10 dB	FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	1 A	4	DISK BUTTON	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	10 W	200 Cel	SILICON			1 A	RADIAL	O-CRDB-F4	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MMBF5484LT1	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER		16 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION	.225 W	150 Cel	SILICON	-55 Cel	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235	1 pF
MMBFU310LT1G	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Matte Tin (Sn) - annealed		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260	2.5 pF
NE3210S01-T1	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	12 dB	GULL WING	UNSPECIFIED	DEPLETION MODE	1	KU BAND	.07 A	4	MICROWAVE	FET RF Small Signal	HETERO-JUNCTION	.165 W	125 Cel	SILICON		TIN LEAD	.015 A	UNSPECIFIED	X-PXMW-G4		SOURCE	Not Qualified			e0	30	230
ATF-551M4-TR1G	Agilent Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	5 V	15.5 dB	NO LEAD	RECTANGULAR	DEPLETION MODE	1	X BAND		4	CHIP CARRIER		HIGH ELECTRON MOBILITY			SILICON		TIN	.1 A	BOTTOM	R-CBCC-N4	1		Not Qualified	LOW NOISE		e3
BF513,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	20 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Tin (Sn)	.03 A	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3	30	260	.4 pF

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.