Nexperia Small Signal Bipolar Junction Transistors (BJT) 2,392

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MMBT3906VL

Nexperia

PNP

SINGLE

YES

250 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

SILICON

40 V

70 ns

-65 Cel

300 ns

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101

BCP56-16TX

Nexperia

NPN

SINGLE

YES

155 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

80 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PBHV8540X,115

Nexperia

NPN

SINGLE

YES

30 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

SILICON

400 V

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

TO-243AA

e3

30

260

AEC-Q101; IEC-60134

BCP56-16HX

Nexperia

TIN

1

e3

30

260

MMBT3904VL

Nexperia

NPN

SINGLE

YES

300 MHz

.2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

SILICON

40 V

70 ns

250 ns

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

BCP56-16TF

Nexperia

NPN

SINGLE

YES

155 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

80 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC847C/AU215

Nexperia

BC817-25/DG,215

Nexperia

TIN

1

e3

30

260

PMBT2222AMYL

Nexperia

TIN

1

e3

30

260

BCP53-16TX

Nexperia

PNP

SINGLE

YES

140 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

80 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC847BS-QX

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

.4 W

200

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

BCP56-10TX

Nexperia

NPN

SINGLE

YES

155 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

150 Cel

SILICON

80 V

-55 Cel

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PMBT2222AYSX

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

300 MHz

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

75

150 Cel

SILICON

40 V

35 ns

-55 Cel

250 ns

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

BC847BS-QF

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

.4 W

200

150 Cel

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

BCP56-10HX

Nexperia

TIN

1

e3

30

260

BCX53-16TF

Nexperia

PNP

SINGLE

YES

140 MHz

1 A

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

63

150 Cel

SILICON

80 V

-55 Cel

TIN

SINGLE

R-PSSO-F3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC847AQAZ

Nexperia

NPN

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

SMALL OUTLINE

.28 W

110

SILICON

45 V

TIN

DUAL

R-PDSO-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PMBT2222AM

Nexperia

TIN

1

e3

30

260

PMBT2222AQA

Nexperia

TIN

1

e3

30

260

BC847BPN-QX

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

2.2 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G6

AEC-Q101; IEC-60134

BC846BW-QX

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

3 pF

SILICON

65 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

BC847BPN-QH

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

2.2 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G6

AEC-Q101; IEC-60134

PMBT2222AMB

Nexperia

TIN

1

e3

30

260

BCP56TX

Nexperia

NPN

SINGLE

YES

155 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

SILICON

80 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC847BPN-QF

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

2.2 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G6

AEC-Q101; IEC-60134

BC847BPN-QZ

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

100 MHz

.4 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

200

150 Cel

2.2 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G6

AEC-Q101; IEC-60134

BC846BW-QF

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

3 pF

SILICON

65 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

PDTC114ET-QR

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

AEC-Q101; IEC-60134

PMBT2222A/DG215

Nexperia

PDTC114ET-QVL

Nexperia

NPN

SINGLE WITH BUILT-IN RESISTOR

YES

230 MHz

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.1 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

30

150 Cel

2.5 pF

SILICON

50 V

-65 Cel

DUAL

R-PDSO-G3

BUILT IN BIAS RESISTANCE RATIO IS 1

AEC-Q101; IEC-60134

BC847BW-QX

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

BCP53-16TF

Nexperia

PNP

SINGLE

YES

140 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

SILICON

80 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC847CW-QX

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

BC847BW-QF

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

200

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

TIN

DUAL

R-PDSO-G3

1

e3

30

260

AEC-Q101; IEC-60134

PHPT610030NPKX

Nexperia

NPN AND PNP

SEPARATE, 2 ELEMENTS

YES

140 MHz

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

10

SILICON

100 V

TIN

DUAL

R-PDSO-G6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

PMBT2907AYSX

Nexperia

PNP

SEPARATE, 2 ELEMENTS

YES

200 MHz

.6 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

6

SMALL OUTLINE

100

SILICON

60 V

40 ns

365 ns

TIN

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

BC856BMYL

Nexperia

PNP

SINGLE

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

1

3

CHIP CARRIER

220

SILICON

60 V

TIN

BOTTOM

R-PBCC-N3

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP53-10TX

Nexperia

PNP

SINGLE

YES

140 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

SILICON

80 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BCP53TX

Nexperia

PNP

SINGLE

YES

140 MHz

1 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

63

SILICON

80 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC847CW-QF

Nexperia

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.4 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

420

150 Cel

1.5 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

BC817-25W-QX

Nexperia

NPN

SINGLE

YES

100 MHz

.29 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

160

150 Cel

3 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

BC857BW-QX

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

3 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

BC847QASZ

Nexperia

NPN

SEPARATE, 2 ELEMENTS

YES

100 MHz

.1 A

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

2

6

SMALL OUTLINE

.35 W

200

SILICON

45 V

TIN

DUAL

R-PDSO-N6

1

COLLECTOR

e3

30

260

AEC-Q101; IEC-60134

BC857BW-QF

Nexperia

PNP

SINGLE

YES

100 MHz

.2 W

.1 A

PLASTIC/EPOXY

SWITCHING

.6 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

220

150 Cel

3 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

PMBT2907AMB

Nexperia

TIN

1

e3

30

260

AEC-Q101

BCP53HX

Nexperia

TIN

1

e3

30

260

BC807-25/L215

Nexperia

BC817-40W-QX

Nexperia

NPN

SINGLE

YES

100 MHz

.29 W

.5 A

PLASTIC/EPOXY

SWITCHING

.7 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

250

150 Cel

3 pF

SILICON

45 V

-65 Cel

DUAL

R-PDSO-G3

AEC-Q101; IEC-60134

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395