Power Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
ULN2803AN	Texas Instruments	NPN	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO			.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	8	18	IN-LINE				150 Cel	SILICON	50 V				NICKEL PALLADIUM GOLD	DUAL	R-PDIP-T18			Not Qualified	LOGIC LEVEL COMPATIBLE	MS-001AC	e4
TIP112	Texas Instruments	NPN	DARLINGTON	NO		50 W	.05 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	100 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
ULN2803APG	Toshiba	NPN	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO			.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	8	18	IN-LINE			1000		SILICON	50 V					DUAL	R-PDIP-T18			Not Qualified	LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
ULN2003ADRG3	Texas Instruments	NPN	COMPLEX	YES				PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE					SILICON	50 V				Matte Tin (Sn)	DUAL	R-PDSO-G16	1			LOGIC LEVEL COMPATIBLE	MS-012AC	e3	NOT SPECIFIED	260
ULN2803ANE4	Texas Instruments	NPN	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO			.5 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	8	18	IN-LINE				150 Cel	SILICON	50 V				NICKEL PALLADIUM GOLD	DUAL	R-PDIP-T18			Not Qualified	LOGIC LEVEL COMPATIBLE	MS-001AC	e4
BUX87	NXP Semiconductors	NPN	SINGLE	NO	20 MHz		.5 A	PLASTIC/EPOXY	SWITCHING	1 V	THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT		20 W	26	150 Cel	SILICON	450 V	500 ns				SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-126
MJE340G	Onsemi	NPN	SINGLE	NO		20 W	.5 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		30	150 Cel	SILICON	300 V				MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	HIGH RELIABILITY	TO-225AA	e3
TIP122	Texas Instruments	NPN	DARLINGTON	NO		65 W	5 A	PLASTIC/EPOXY	SWITCHING	4 V	THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors	65 W	1000	150 Cel	SILICON	100 V	1500 ns		8500 ns		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
TIP112G	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO	25 MHz	50 W	2 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	100 V				TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e3
TIP115	Texas Instruments	PNP	DARLINGTON	NO		50 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	60 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
TIP111G	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO		50 W	2 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	80 V				TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3
TIP117G	Onsemi	PNP	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO	25 MHz	50 W	2 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	100 V				TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e3
TIP110G	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO		50 W	2 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	60 V				TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3
TIP115G	Onsemi	PNP	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO		50 W	2 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	60 V				TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3
TIP116G	Onsemi	PNP	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO		50 W	2 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	80 V				TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3
MJD127T4G	Onsemi	PNP	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	YES	4 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		100	150 Cel	SILICON	100 V		-65 Cel		MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260
ULN2003AN	Texas Instruments	NPN	COMPLEX	NO			.5 A	PLASTIC/EPOXY	SWITCHING	1.6 V	THROUGH-HOLE	RECTANGULAR	7	16	IN-LINE					SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDIP-T16			Not Qualified	LOGIC LEVEL COMPATIBLE	MS-001BB	e4	NOT APPLICABLE	NOT APPLICABLE
TIP41C	Texas Instruments	NPN	SINGLE	NO	3 MHz	65 W	6 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		15	150 Cel	SILICON	100 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TIP41-C	Secos	NPN	SINGLE	NO	3 MHz	65 W	6 A	PLASTIC/EPOXY	SWITCHING	1.5 V	THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors	65 W	15	150 Cel	SILICON	100 V				Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e0
SBCP56-16T1G	Onsemi	NPN	SINGLE	YES	130 MHz	1.5 W	1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		100	150 Cel	SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR			TO-261AA	e3	30	260
MJD44H11-1G	Onsemi	NPN	SINGLE	NO	50 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	IN-LINE	Other Transistors		40	150 Cel	SILICON	80 V				MATTE TIN	SINGLE	R-PSIP-T3	1	COLLECTOR	Not Qualified			e3	30	260
MJD127T4	Onsemi	PNP	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	YES	4 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		100	150 Cel	SILICON	100 V				Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e0	30	235
TIP120	Texas Instruments	NPN	DARLINGTON	NO		65 W	5 A	PLASTIC/EPOXY	SWITCHING	4 V	THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors	65 W	1000	150 Cel	SILICON	60 V	1500 ns		8500 ns		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2N3055	Texas Instruments	NPN	SINGLE	NO	2.5 MHz	115 W	15 A	METAL	AMPLIFIER	8 V	PIN/PEG	ROUND	1	2	FLANGE MOUNT	Other Transistors	115 W	5	200 Cel	SILICON	60 V					BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified		TO-3		NOT SPECIFIED	NOT SPECIFIED
MJD122T4G	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	YES	4 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		100	150 Cel	SILICON	100 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260
2N3904T&A	Continental Device India																																	NOT SPECIFIED	NOT SPECIFIED
TIP127	Texas Instruments	PNP	DARLINGTON WITH BUILT-IN RESISTOR	NO		65 W	5 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		1000	150 Cel	SILICON	100 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MJD44H11G	Onsemi	NPN	SINGLE	YES	85 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		40	150 Cel	SILICON	80 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260
BU508AW	NXP Semiconductors	NPN	SINGLE	NO	7 MHz	125 W	8 A	PLASTIC/EPOXY	SWITCHING	1 V	THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors	125 W	6	150 Cel	SILICON	700 V				MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3
NJVMJD31CT4G	Onsemi	NPN	SINGLE	YES	3 MHz	15 W	3 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		10	150 Cel	SILICON	100 V		-65 Cel		MATTE TIN	SINGLE	R-PSSO-G2	1					e3	30	260	AEC-Q101
MJE15034G	Onsemi	NPN	SINGLE	NO	30 MHz	50 W	4 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		10	150 Cel	SILICON	350 V				TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3
MJD31CT4G	Onsemi	NPN	SINGLE	YES	3 MHz	15 W	3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		10	150 Cel	SILICON	100 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260
TIP120G	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO		65 W	5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		1000	150 Cel	SILICON	60 V				TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3
TIP117	Texas Instruments	PNP	DARLINGTON	NO		50 W	4 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	100 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
ULN2003APWR	Texas Instruments	NPN	COMPLEX	YES			.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	7	16	SMALL OUTLINE					SILICON	50 V				Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	R-PDSO-G16	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MO-153AB	e4	NOT SPECIFIED	260
TIP31-C	Secos	NPN	SINGLE	NO	3 MHz	40 W	3 A	PLASTIC/EPOXY	SWITCHING	1.2 V	THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors	2 W	10	150 Cel	SILICON	100 V		-65 Cel		Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e0	NOT SPECIFIED	NOT SPECIFIED
TIP31C	Texas Instruments	NPN	SINGLE	NO	3 MHz	30 W	3 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		10	150 Cel	SILICON	100 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BCP56-16T1G	Onsemi	NPN	SINGLE	YES	130 MHz	1.5 W	1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors		100	150 Cel	SILICON	80 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3	30	260
TIP122G	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	NO	4 MHz	65 W	5 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		1000	150 Cel	SILICON	100 V				TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e3
MJD44H11T4G	Onsemi	NPN	SINGLE	YES	85 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		40	150 Cel	SILICON	80 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260
NJVMJD31CT4G-VF01	Onsemi	NPN	SINGLE	YES	3 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE			10	150 Cel	SILICON	100 V		-65 Cel		MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	AEC-Q101
NJVMJD127T4G	Onsemi	PNP	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	YES	4 MHz	20 W	8 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		100	150 Cel	SILICON	100 V		-65 Cel		Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	AEC-Q101
MJD122T4	Onsemi	NPN	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	YES	4 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		100	150 Cel	SILICON	100 V				TIN LEAD	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e0		235
NJVMJD44H11T4G	Onsemi	NPN	SINGLE	YES	85 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		40	150 Cel	SILICON	80 V		-55 Cel		MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	AEC-Q101
TIP110	Texas Instruments	NPN	DARLINGTON	NO		50 W	.05 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		500	150 Cel	SILICON	60 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TIP32C	Texas Instruments	PNP	SINGLE	NO	3 MHz	40 W	3 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		10	150 Cel	SILICON	100 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TIP35C	Texas Instruments	NPN	SINGLE	NO	3 MHz	125 W	25 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	1	3	FLANGE MOUNT	Other Transistors		10	150 Cel	SILICON	100 V					SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NJVMJD44H11G	Onsemi	NPN	SINGLE	YES	85 MHz	20 W	8 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	2	SMALL OUTLINE	Other Transistors		40	150 Cel	SILICON	80 V				MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	AEC-Q101

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.