RF Power Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
PD55015TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN		7 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
PD55015-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN		5 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
MW6S004NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	68 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN			QUAD	R-PQSO-N4	3	SOURCE	Not Qualified			e3	40	260
PD55003-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	31.7 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		Matte Tin (Sn) - annealed		2.5 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
PD85004	STMicroelectronics	N-CHANNEL	SINGLE	YES	6 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2 A	SINGLE	R-PSSO-F3		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
PD55003L-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	14 W	PLASTIC/EPOXY	AMPLIFIER	40 V		NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN		2.5 A	QUAD	S-PQCC-N5	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3
MRFE6VP100HR5	NXP Semiconductors	N-CHANNEL																FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel														40	260
D1008UK	Tt Electronics Plc	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	70 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		GOLD			DUAL	R-CDFM-F4		SOURCE	Not Qualified	LOW NOISE		e4
D1028UK	Tt Electronics Plc	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	70 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified	LOW NOISE			NOT SPECIFIED	NOT SPECIFIED
PD55015S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		Matte Tin (Sn) - annealed		5 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
PD55015STR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		Matte Tin (Sn) - annealed		7 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
BLF574	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	110 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON				56 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
PD55015	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		TIN LEAD		5 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY		e0
PD55015S	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		TIN LEAD		5 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY		e0
CGH40010F	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		2	FLANGE MOUNT	FET RF Small Signal	HIGH ELECTRON MOBILITY		105 Cel	GALLIUM NITRIDE		GOLD OVER NICKEL			DUAL	R-CDFM-F2		SOURCE	Not Qualified			e4
CGHV40050P	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V		FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		2	FLATPACK		HIGH ELECTRON MOBILITY		225 Cel	GALLIUM NITRIDE				6.3 A	DUAL	R-CDFP-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED	.3 pF
CGHV96100F2	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	100 V	10.5 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	X BAND	12 A	2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		125 Cel	GALLIUM NITRIDE	-40 Cel			12 A	DUAL	R-CDFM-F2
PD55025-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN		7 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
PD55003S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	31.7 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		Matte Tin (Sn) - annealed		2.5 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
MRF6S20010GNR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	68 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON		TIN			DUAL	R-PDFM-G2	3	SOURCE	Not Qualified		TO-270BA	e3	40	260
MW6S010NR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	61.4 W	PLASTIC/EPOXY	AMPLIFIER	68 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON		TIN			DUAL	R-PDFM-F2	3	SOURCE	Not Qualified		TO-270AA	e3	40	260
PD55003TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	31.7 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		Matte Tin (Sn) - annealed		2.5 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
AFT05MS004NT1	NXP Semiconductors																							MATTE TIN					1					e3	40	260
GS66508T-MR	Gan Systems	N-CHANNEL	SINGLE	YES		UNSPECIFIED	SWITCHING	650 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	GALLIUM NITRIDE	-55 Cel	Gold (Au) - with Nickel (Ni) barrier		30 A	BOTTOM	R-XBCC-N4	3	SOURCE				e4	30	260
PD55025S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN		7 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
PD54008TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN		5 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3
CGH40006P	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.75 A	2	FLATPACK	FET RF Small Signal	HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE				.75 A	DUAL	R-CDFP-F2		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
A5G35S008NT6	NXP Semiconductors																												3						40	260
A2G22S190-01SR3	NXP Semiconductors																																		40	260
CGHV40030F	Wolfspeed	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V	15 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		85 Cel	GALLIUM NITRIDE	-40 Cel			4.2 A	DUAL	R-CDFM-F2		SOURCE							.15 pF
A3G26H502W17SR3	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V	11.3 dB	FLAT	RECTANGULAR	DEPLETION MODE	2	S BAND		6	FLATPACK		JUNCTION		150 Cel	GALLIUM NITRIDE	-55 Cel				QUAD	R-CQFP-F6							40	260
CG2H40010F	Wolfspeed	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	84 V	15 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE	-40 Cel			1.5 A	DUAL	R-CDFM-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED	.186 pF
NE5550979A-T1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	25 W								1		3 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					3 A
CGHV96050F2	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	100 V	10 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	X BAND	6 A	2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		125 Cel	GALLIUM NITRIDE	-40 Cel			6 A	DUAL	R-CDFM-F2
BLF245B	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	75 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	VERY HIGH FREQUENCY BAND	4.5 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	200 Cel	SILICON			1.5 ohm	4.5 A	DUAL	R-CDFM-F4	NOT APPLICABLE	SOURCE	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
CGH40045F	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT	FET RF Small Signal	HIGH ELECTRON MOBILITY		175 Cel	GALLIUM NITRIDE		GOLD OVER NICKEL			DUAL	R-CDFM-F2		SOURCE	Not Qualified			e4
NE5550234-T1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	12.5 W								1		.6 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					.6 A
PD55025TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON				7 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
PD57060-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	.079 W	PLASTIC/EPOXY	AMPLIFIER	65 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN		7 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3		225
CGH25120F	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	SQUARE	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE					DUAL	S-CDFM-F2		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
AFT05MS003NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	30 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-40 Cel	TIN			SINGLE	R-PSSO-F3	1	SOURCE				e3	40	260	1.1 pF
PD55008-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		Matte Tin (Sn) - annealed		4 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3	30	250
PD55003L	STMicroelectronics	N-CHANNEL	SINGLE	YES	26.6 W	PLASTIC/EPOXY	AMPLIFIER	40 V		NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD		2.5 A	QUAD	S-PQCC-N5		SOURCE	Not Qualified	HIGH RELIABILITY		e0
A5G26S008NT6	NXP Semiconductors																												3						40	260
MRFE6VP61K25HR6	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	1300 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified				40	260
PD55003STR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	31.7 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN		2.5 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified	HIGH RELIABILITY		e3
CGHV40030P	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V	15 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND		2	FLATPACK		HIGH ELECTRON MOBILITY		85 Cel	GALLIUM NITRIDE	-40 Cel			4.2 A	DUAL	R-CDFP-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED	.15 pF
NE5550779A-T1-A	Renesas Electronics	N-CHANNEL	SINGLE		17.8 W								1		2.1 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					2.1 A

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.