RF Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BF998RE6327HTSA1	Infineon Technologies
NE3503M04-A	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	11 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	KU BAND	.07 A	4	SMALL OUTLINE	FET RF Small Signal	HETERO-JUNCTION	.125 W	125 Cel	SILICON		TIN BISMUTH	.015 A	DUAL	R-PDSO-F4			Not Qualified			e6
NE4210S01	Renesas Electronics	N-CHANNEL	SINGLE	YES	.165 W	UNSPECIFIED	AMPLIFIER	3 V	11 dB	GULL WING	ROUND	DEPLETION MODE	1	KU BAND		4	DISK BUTTON	Other Transistors	HETERO-JUNCTION		125 Cel	SILICON		NICKEL GOLD	.015 A	RADIAL	O-XRDB-G4		SOURCE	Not Qualified			e4
2N3819/D74Z	National Semiconductor	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	ROUND	DEPLETION MODE	1			3	CYLINDRICAL		JUNCTION			SILICON				BOTTOM	O-PBCY-T3			Not Qualified		TO-92				4 pF
BF2030	Infineon Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	10 V	20 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.04 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.04 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		e3
BF2030E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W	PLASTIC/EPOXY	AMPLIFIER	10 V	20 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.04 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.04 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE				260
BF999E6327HTSA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		20 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	.03 A	DUAL	R-PDSO-G3	1		Not Qualified			e3
MMBF5485	Onsemi	N-CHANNEL	SINGLE	YES	.35 W	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	1 pF
TGF2977-SM	Qorvo																							Nickel/Palladium/Gold (Ni/Pd/Au)				3					e4	30	260
ATF-521P8-BLK	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	7 V	15.5 dB	NO LEAD	SQUARE	ENHANCEMENT MODE	1	L BAND	.5 A	8	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	1.5 W	150 Cel	SILICON		MATTE TIN	.5 A	DUAL	S-PDSO-N8	1	SOURCE	Not Qualified	LOW NOISE	MO-229	e3		260
ATF-54143-TR2G	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.12 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.725 W	150 Cel	GALLIUM ARSENIDE		MATTE TIN	.12 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
BF2040E6814HTSA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	10 V	20 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	.04 A	DUAL	R-PDSO-G4	1	SOURCE		LOW NOISE		e3
BLF184XR	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	135 V	22.8 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				DUAL	R-CDFM-F4		SOURCE								IEC-60134
BLM7G1822S-20PBG	NXP Semiconductors
CE3512K2-C1	California Eastern Laboratories	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	12.5 dB	FLAT	SQUARE	DEPLETION MODE	1	X BAND		4	MICROWAVE		JUNCTION			SILICON			.015 A	QUAD	S-PQMW-F4
MMBFJ310LT3	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235	2.5 pF
2N3823UB	Microchip Technology	N-CHANNEL	SINGLE	YES	.3 W	CERAMIC, METAL-SEALED COFIRED		30 V		NO LEAD	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		200 Cel	SILICON				DUAL	R-CDSO-N3			Not Qualified						2 pF
2N5952/D74Z	National Semiconductor	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	CYLINDRICAL		JUNCTION			SILICON				BOTTOM	O-PBCY-T3			Not Qualified		TO-92				2 pF
2SK544-D	Sanyo Electric	N-CHANNEL	SINGLE	NO	.3 W	PLASTIC/EPOXY	AMPLIFIER	20 V		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND	.03 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON			.03 A	SINGLE	R-PSIP-T3			Not Qualified	LOW NOISE
2SK544D	Onsemi	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON		Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.03 A	SINGLE	R-PSIP-T3			Not Qualified	LOW NOISE
ATF-50189-TR1	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	7 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	1 A	3	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	2.25 W	150 Cel	SILICON		MATTE TIN	1 A	SINGLE	R-PSSO-F3	2		Not Qualified	LOW NOISE	MO-229	e3		260
ATF-50189-TR1G	Agilent Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	7 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		3	SMALL OUTLINE		HIGH ELECTRON MOBILITY			SILICON			1 A	SINGLE	R-PSSO-F3			Not Qualified	LOW NOISE
BF2030WH6814XTSA1	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W	PLASTIC/EPOXY	AMPLIFIER	10 V	20 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.04 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.04 A	DUAL	R-PDSO-G4		SOURCE		LOW NOISE			NOT SPECIFIED	NOT SPECIFIED
BF998E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W	PLASTIC/EPOXY		12 V		GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.03 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.03 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		e3		260
CLF1G0035-100,112	NXP Semiconductors	N-CHANNEL																FET RF Small Signal			250 Cel
JANTXV2N3823	Defense Logistics Agency	N-CHANNEL	SINGLE	NO		METAL		30 V		WIRE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	CYLINDRICAL		JUNCTION			SILICON				BOTTOM	O-MBCY-W4			Not Qualified						2 pF	MIL-19500/375G
NTE312	Nte Electronics	N-CHANNEL	SINGLE	NO	.36 W	PLASTIC/EPOXY	AMPLIFIER		10 dB	WIRE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	CYLINDRICAL	Other Transistors	JUNCTION			SILICON				BOTTOM	O-PBCY-W3			Not Qualified		TO-92				1 pF
SST310-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE		JUNCTION			SILICON		Matte Tin (Sn)		DUAL	R-PDSO-G3	1			LOW NOISE	TO-236	e3	30	260
2N5486PBFREE	Central Semiconductor	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER		10 dB	THROUGH-HOLE	ROUND	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.03 A	3	CYLINDRICAL		JUNCTION	.31 W	150 Cel	SILICON	-65 Cel	MATTE TIN OVER NICKEL	.03 A	BOTTOM	O-PBCY-T3					TO-92	e3			1 pF
ATF-38143-BLKG	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	4.5 V	15 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.58 W	160 Cel	GALLIUM ARSENIDE		MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
ATF-541M4-BLK	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		4	CHIP CARRIER	FET RF Small Signal	HIGH ELECTRON MOBILITY	.36 W	150 Cel	SILICON		GOLD	.12 A	BOTTOM	R-PBCC-N4	1		Not Qualified	LOW NOISE		e4		260
ATF-55143-BLK	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.1 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.27 W	150 Cel	SILICON		TIN LEAD	.1 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-55143-TR2G	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.1 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.27 W	150 Cel	SILICON		MATTE TIN	.1 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
BF2030E6814HTSA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	10 V	20 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.04 A	DUAL	R-PDSO-G4		SOURCE		LOW NOISE
BF245B,126	NXP Semiconductors	N-CHANNEL	SINGLE	NO	.3 W	PLASTIC/EPOXY	AMPLIFIER	30 V		THROUGH-HOLE	ROUND	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	CYLINDRICAL	Other Transistors	JUNCTION		150 Cel	SILICON		MATTE TIN	.025 A	BOTTOM	O-PBCY-T3			Not Qualified			e3
BF5030WH6327XTSA1	Infineon Technologies																							TIN				1					e3
FHX35LGT/002	Sumitomo Electric Industries	N-CHANNEL						4 V				DEPLETION MODE							HIGH ELECTRON MOBILITY			SILICON												NOT SPECIFIED	NOT SPECIFIED
MGF4964BL	Mitsubishi Electric	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		11.5 dB	FLAT	SQUARE	DEPLETION MODE	1	K BAND	.06 A	4	MICROWAVE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.05 W	125 Cel	GALLIUM ARSENIDE			.06 A	QUAD	S-PQMW-F4							NOT SPECIFIED	NOT SPECIFIED
MMBFJ211	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
NTE132	Nte Electronics	N-CHANNEL	SINGLE	NO	.31 W	PLASTIC/EPOXY	AMPLIFIER			WIRE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	CYLINDRICAL	Other Transistors	JUNCTION			SILICON				BOTTOM	O-PBCY-W3			Not Qualified		TO-106				1.2 pF
PMBFJ310,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260	2.5 pF
2SK54-C	Renesas Electronics	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER			WIRE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	CYLINDRICAL		JUNCTION			SILICON				BOTTOM	O-PBCY-W3			Not Qualified		TO-92				.6 pF
BF1207,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.18 W	PLASTIC/EPOXY	AMPLIFIER	6 V	21 dB	GULL WING	RECTANGULAR	DUAL GATE, ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND	.03 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.03 A	DUAL	R-PDSO-G6		ISOLATED	Not Qualified	LOW NOISE		e3
ATF-53189-BLK	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	7 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.3 A	3	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	1 W	150 Cel	SILICON		MATTE TIN	.3 A	SINGLE	R-PSSO-F3	2	SOURCE	Not Qualified	LOW NOISE		e3		260
ATF-38143-TR1G	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	4.5 V	15 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	X BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.58 W	160 Cel	GALLIUM ARSENIDE		MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
MMBFJ305	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	DEPLETION MODE	1			3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Tin (Sn)		DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260
2SK302-Y	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.15 W	PLASTIC/EPOXY	AMPLIFIER	20 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND	.03 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON			.03 A	DUAL	R-PDSO-G3			Not Qualified		TO-236				.05 pF
2SK3078A(TE12L,F)	Toshiba																																	NOT SPECIFIED	NOT SPECIFIED

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.