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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41K256M16TW-107AIT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		30	260	.012 Amp	8	14 mm
MT41K256M16TW-107IT:P	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				256MX16	256M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		30	260			14 mm	20 ns
MT41K256M16TW-107XIT:P	Micron Technology	DDR3L DRAM		96	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY							256MX16	256M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V					4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1
MT41K256M16TW-107:P/TR	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.5 MHz	8 mm		4294967296 bit	1.283 V		e1	30	260	.012 Amp	8	14 mm
MT41K256M16TW-107:P	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		30	260			14 mm
MT41K256M16TW-107IT:PTR	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				256MX16	256M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		30	260			14 mm	20 ns
MT41K256M16TW-107AAT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1	30	260	.012 Amp	8	14 mm
MT40A512M16LY-062EIT:E	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT40A512M16LY-062EIT:ETR	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1600 MHz	7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT41K128M16JT-125IT:KTR	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K128M16JT-125IT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel		3-STATE	128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.225 ns
MT40A512M16LY-062EAIT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	270 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH				.018 Amp	8	13.5 mm
MT47H64M16NF-25EIT:M	Micron Technology	DDR2 DRAM		84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.01 Amp	4,8	12.5 mm	.4 ns
MT41K256M16TW-107AAT:PTR	Micron Technology	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1	30	260	.012 Amp	8	14 mm
MT41K128M16JT-125AIT:KTR	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	85 Cel		3-STATE	128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	8 mm		2147483648 bit	1.283 V		e1	30	260	.012 Amp	8	10.5 mm
MT41K128M16JT-125XIT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT48LC16M16A2P-6AIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	100 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M		-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT41K128M16JT-125AIT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel		3-STATE	128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm
MT41K128M16JT-125:K	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel		3-STATE	128MX16	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.225 ns
MT47H64M16NF-25EIT:MTR	Micron Technology	DDR2 DRAM		84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	95 Cel			64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH				.01 Amp	4,8	12.5 mm	.4 ns
MT47H64M16NF-25EAIT:M	Micron Technology	DDR2 DRAM		84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	210 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH		30	260	.01 Amp	4,8	12.5 mm	.4 ns
MT47H64M16NF-25E:M	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel		3-STATE	64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	SELF REFRESH	e1	30	260		4,8	12.5 mm	.4 ns
MT47H64M16NF-25EXIT:M	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.4 ns
MT48LC16M16A2P-6AIT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			16MX16	16M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
KVR16S11/8	Kingston Technology Company	DDR3 DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		NO	COMMON	1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel			1GX64	1G		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30 mm	800 MHz			68719476736 bit	1.425 V							67.6 mm
MT41K128M16JT-125XIT:KTR	Micron Technology	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260		8	14 mm
MT41K256M16TW-107AUT:P	Micron Technology	DDR3L DRAM	AUTOMOTIVE	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel		3-STATE	256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8	14 mm
MT41K128M16JT-125:KTR	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				128MX16	128M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K256M16HA-125IT:E	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	243 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel		3-STATE	256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.016 Amp	8	14 mm
MT41K256M16HA-125IT:ETR	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				256MX16	256M			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT47H64M16NF-25E:MTR	Micron Technology	DDR2 DRAM	OTHER	84	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY				85 Cel			64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V					1073741824 bit	1.7 V	SELF REFRESH	e1	30	260
MT40A512M16LY-062EAAT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	275 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		3-STATE	512MX16	512M	1.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1600 MHz	7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.02 Amp	8	13.5 mm
NT5CC256M16ER-EKI	Nanya Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
MT48LC16M16A2P-6A:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT40A512M16LY-062E:E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT41K512M16HA-125:A	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY			.8 mm	85 Cel			512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
IS42S16400J-7TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	70 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		.8 mm	85 Cel	NO	3-STATE	4MX16	4M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e3	30	260		1,2,4,8	22.22 mm	5.4 ns
MT48LC16M16A2P-6A:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			16MX16	16M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT40A512M16LY-062EAUT:E	Micron Technology	DDR4 DRAM	AUTOMOTIVE	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	125 Cel			512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
KVR16S11S8/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words				1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel			512MX64	512M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30 mm				34359738368 bit	1.425 V	PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM		NOT SPECIFIED	NOT SPECIFIED			67.6 mm
MT47H128M16RT-25EIT:C	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	330 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel		3-STATE	128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	4,8	12.5 mm	.4 ns
MT41K128M16JT-107:K	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	219 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel		3-STATE	128MX16	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1			.012 Amp	8	14 mm	.195 ns
MT47H128M16RT-25EAIT:CTR	Micron Technology	DDR2 DRAM																																	TIN SILVER COPPER
MT41K512M16HA-125IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41J128M16JT-125:KTR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			128MX16	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm
IS43TR16256A-15HBLI	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	30	260			13 mm	.125 ns
MT41K256M16HA-125IT	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				256MX16	256M			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT40A256M16GE-083E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.