NE5550279A-A by Renesas Electronics | Vyrian | Semiconductor & Electronic Component Distributor

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NE5550279A-A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Power Dissipation Ambient: 6.25 W;
Datasheet	NE5550279A-A Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.6 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	QUAD
Package Style (Meter):	MICROWAVE
JESD-30 Code:	R-XQMW-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.6 A
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	6.25 W

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