RF Power Bipolar Junction Transistors (BJT)

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2010	Microsemi	NPN	SINGLE	YES			2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON		TIN LEAD	DUAL	R-CDFM-F2			Not Qualified	HIGH RELIABILITY		e0
2N3866	Microchip Technology	NPN	SINGLE	NO	800 MHz		.4 A	METAL	AMPLIFIER	1 V	10 dB	WIRE	ROUND	1	ULTRA HIGH FREQUENCY BAND	3	CYLINDRICAL			10		3.5 pF	SILICON	30 V		BOTTOM	O-MBCY-W3					TO-39
2N3866A	Microchip Technology	NPN	SINGLE	NO	800 MHz		.4 A	METAL	AMPLIFIER	1 V	10 dB	WIRE	ROUND	1	ULTRA HIGH FREQUENCY BAND	3	CYLINDRICAL			25		3.5 pF	SILICON	30 V		BOTTOM	O-MBCY-W3					TO-39
2005	Microsemi	NPN	SINGLE	YES			1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON		TIN LEAD	DUAL	R-CDFM-F2			Not Qualified	HIGH RELIABILITY		e0
BLW32	NXP Semiconductors	NPN	SINGLE	NO	3500 MHz	10.8 W	.65 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		11 dB	FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors	10.8 W	20	200 Cel		SILICON	30 V		RADIAL	O-CRPM-F4			Not Qualified	HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
BLW77	NXP Semiconductors	NPN	SINGLE	NO	320 MHz	245 W	12 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	35 V		RADIAL	O-CRFM-F4		ISOLATED	Not Qualified
BDP950H6327XTSA1	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	60 V	TIN	DUAL	R-PDSO-G4	1	COLLECTOR				e3
C3-28	Asi Semiconductor	NPN	SINGLE	NO	600 MHz	10 W	1 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors			200 Cel	7 pF	SILICON			RADIAL	O-CRPM-F4			Not Qualified
MS1076B	Microsemi	NPN	SINGLE	YES			16 A	PLASTIC/EPOXY				FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT				200 Cel		SILICON	35 V		RADIAL	O-PRFM-F4			Not Qualified	HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS
2SC2879A	Toshiba	NPN	SINGLE	YES		250 W	25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	175 Cel		SILICON	18 V		RADIAL	O-CRFM-F4			Not Qualified
SD1726	STMicroelectronics	NPN	SINGLE	NO		233 W	20 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		18	200 Cel	220 pF	SILICON	55 V		RADIAL	O-PRFM-F4			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
1090MP	Microsemi	NPN	SINGLE	YES		250 W	6.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1	L BAND	4	DISK BUTTON	Other Transistors		15	200 Cel	16 pF	SILICON		TIN LEAD	RADIAL	O-CRDB-F4			Not Qualified			e0
1214-55	Microsemi	NPN	SINGLE	YES			8 A	CERAMIC, METAL-SEALED COFIRED	SWITCHING			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON		TIN LEAD	DUAL	R-CDFM-F2			Not Qualified	HIGH RELIABILITY		e0
1075MP	Microsemi	NPN	SINGLE	YES		250 W	6.5 A	UNSPECIFIED	AMPLIFIER			FLAT	ROUND	1	L BAND	4	DISK BUTTON	BIP RF Small Signal		20	200 Cel	50 pF	SILICON	65 V	TIN LEAD	RADIAL	O-XRDB-F4			Not Qualified			e0
3005	Microchip Technology	NPN	SINGLE	YES			2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT				200 Cel		SILICON		TIN LEAD	DUAL	R-CDFM-F2			Not Qualified	HIGH RELIABILITY		e0
1214-110M	Microsemi	NPN	SINGLE	YES		270 W	8 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	BIP RF Small Signal			200 Cel		SILICON		TIN LEAD	DUAL	R-CDFM-F2		BASE	Not Qualified			e0
BDP954H6327XTSA1	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	100 V	TIN	DUAL	R-PDSO-G4	1	COLLECTOR				e3
MS2209	Microsemi	NPN	SINGLE	YES			7 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	SQUARE	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON		TIN LEAD	DUAL	S-CDFM-F2		BASE	Not Qualified			e0
MSC1090M	Microsemi	NPN	SINGLE	YES	1025 MHz	220 W	5.52 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	ROUND	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	65 V	TIN LEAD	DUAL	O-PDFM-F2		BASE	Not Qualified	HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS		e0
SD1897	STMicroelectronics	NPN	SINGLE	YES		29 W	2.3 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	15 V		DUAL	R-PDFM-F2		BASE	Not Qualified	HIGH RELIABILITY
BDP948H6327XTSA1	Infineon Technologies	PNP	SINGLE	YES	100 MHz		3 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1		4	SMALL OUTLINE						SILICON	45 V	TIN	DUAL	R-PDSO-G4	1	COLLECTOR				e3
BLT50,115	NXP Semiconductors	NPN	SINGLE	YES		2 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		10 dB	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE	Other Transistors	2 W	25	175 Cel	6 pF	SILICON	10 V	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e3		260
2SC2879	Toshiba	NPN	SINGLE	YES	100 MHz	250 W	25 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		13 dB	FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	250 W	10	175 Cel		SILICON	18 V		RADIAL	O-CRFM-F4			Not Qualified
BLW96	NXP Semiconductors	NPN	SINGLE	NO	245 MHz	340 W	12 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		15	200 Cel		SILICON	55 V		RADIAL	O-CRFM-F4		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TAN15	Microsemi	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	L BAND	2	FLANGE MOUNT				200 Cel		SILICON		TIN LEAD	DUAL	R-CDFM-F2			Not Qualified			e0
2SC2290	Toshiba	NPN	SINGLE	NO	100 MHz	175 W	20 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		11.8 dB	FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	175 W	10	175 Cel	500 pF	SILICON	18 V		RADIAL	O-CRFM-F4			Not Qualified
2SC2652	Toshiba	NPN	SINGLE	NO	100 MHz	300 W	20 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		13 dB	FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	300 W	10	175 Cel		SILICON	55 V		RADIAL	O-CRFM-F4			Not Qualified
MRF648	Motorola	NPN	SINGLE	YES		175 W	11 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		4.4 dB	FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	175 W	20	150 Cel	150 pF	SILICON	16 V		UNSPECIFIED	O-CXFM-F4			Not Qualified
2N5641	STMicroelectronics	NPN	SINGLE	NO	300 MHz	15 W	1 A	UNSPECIFIED	AMPLIFIER			FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		5	200 Cel	15 pF	SILICON	35 V		RADIAL	O-XRPM-F4
2SC2510	Toshiba	NPN	SINGLE	NO		250 W	20 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		12.2 dB	FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	250 W	10	175 Cel	600 pF	SILICON	35 V		RADIAL	O-CRFM-F4			Not Qualified
2SC2510A	Toshiba	NPN	SINGLE	YES		250 W	20 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	175 Cel	600 pF	SILICON	35 V		RADIAL	O-CRFM-F4			Not Qualified
2SC2782	Toshiba	NPN	SINGLE	YES		220 W	20 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		6.4 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	6	FLANGE MOUNT	Other Transistors	220 W	10	175 Cel	320 pF	SILICON	16 V		UNSPECIFIED	O-CXFM-F6			Not Qualified
2N3632	Texas Instruments	NPN	SINGLE	NO	175 MHz	23 W	3 A	CERAMIC, METAL-SEALED COFIRED				PIN/PEG	ROUND	1	VERY HIGH FREQUENCY BAND	3	POST/STUD MOUNT	Other Transistors		5	200 Cel	25 pF	SILICON	40 V		UPPER	O-CUPM-P3			Not Qualified		TO-60
MRF658	Motorola	NPN	SINGLE	YES		175 W	15 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		4.15 dB	FLAT	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	175 W	40	150 Cel	220 pF	SILICON	16.5 V		UNSPECIFIED	O-CXFM-F4			Not Qualified
2SC2290A	Toshiba	NPN	SINGLE	YES		175 W	20 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	ROUND	1	HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	175 Cel	500 pF	SILICON	18 V		RADIAL	O-CRFM-F4			Not Qualified
2SC2641	Toshiba	NPN	SINGLE	YES		15 W	1.4 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		7.7 dB	FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	15 W	10	175 Cel	25 pF	SILICON	17 V		DUAL	R-CDFM-F4			Not Qualified
MRF221	Motorola	NPN	SINGLE	NO	175 MHz	31 W	2.5 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		6.3 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		5	175 Cel	85 pF	SILICON	18 V	TIN LEAD	RADIAL	O-CRFM-F4			Not Qualified			e0
MRF224	Motorola	NPN	SINGLE	NO		80 W	7 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		4.5 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors	80 W	5	175 Cel	200 pF	SILICON	18 V	TIN LEAD	RADIAL	O-CRFM-F4			Not Qualified			e0
MRF232	Motorola	NPN	SINGLE	NO		20 W	2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		9 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		10	150 Cel	55 pF	SILICON	18 V		RADIAL	O-CRPM-F4			Not Qualified
MRF240A	Motorola	NPN	SINGLE	NO		100 W	8 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		9 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	FLANGE MOUNT	Other Transistors		10	150 Cel	125 pF	SILICON	16 V		RADIAL	O-CRFM-F4			Not Qualified
MRF392	Onsemi	NPN	COMMON EMITTER, 2 ELEMENTS	YES			16 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	2	ULTRA HIGH FREQUENCY BAND	8	FLANGE MOUNT				200 Cel	95 pF	SILICON	30 V		DUAL	R-CDFM-F8			Not Qualified	HIGH RELIABILITY
MRF492A	Motorola	NPN	SINGLE	NO	50 MHz	250 W	20 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		11 dB	FLAT	ROUND	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		10	150 Cel	450 pF	SILICON	18 V	TIN LEAD	RADIAL	O-CRPM-F4			Not Qualified			e0
MRF660	Motorola	NPN	SINGLE	NO		25 W	2.4 A	PLASTIC/EPOXY	AMPLIFIER		5.4 dB	THROUGH-HOLE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	FLANGE MOUNT	Other Transistors		20	150 Cel	25 pF	SILICON	16 V	TIN LEAD	SINGLE	R-PSFM-T3		EMITTER	Not Qualified		TO-220AB	e0
2SC5551AE-TD-E	Onsemi																	Other Transistors							TIN BISMUTH			1					e6	30	260
2SC5551AF-TD-E	Onsemi																	Other Transistors							TIN BISMUTH			1					e6	30	260
MRF448A	M/a-com Technology Solutions
2N4128	Texas Instruments	NPN	SINGLE	NO	400 MHz	40 W	5 A	UNSPECIFIED				FLAT	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	4	POST/STUD MOUNT	Other Transistors		10	175 Cel	18 pF	SILICON	40 V		RADIAL	R-XRPM-F4			Not Qualified		TO-117
2N4041	Texas Instruments	NPN	SINGLE	YES	400 MHz	18 W	1 A	CERAMIC, METAL-SEALED COFIRED				FLAT	ROUND	1		4	DISK BUTTON	Other Transistors		10	175 Cel		SILICON	40 V		RADIAL	O-CRDB-F4			Not Qualified		TO-117

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.