Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BSS138LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	3.5 ohm	.2 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	40	260	5 pF
BSS138NH6327XTSA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel	TIN	3.5 ohm	.23 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE		e3	30	260	3.8 pF	AEC-Q101; IEC-61249-2-21
BSS138W-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	.2 W	150 Cel	SILICON	-55 Cel	MATTE TIN	3.5 ohm	.2 A	DUAL	R-PDSO-G3	1	Not Qualified	LOW THRESHOLD		e3	30	260	8 pF	UL RECOGNIZED
BSS123LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.17 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	6 ohm	.17 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	40	260
BSS138-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	3.5 ohm	.2 A	DUAL	R-PDSO-G3	1	Not Qualified	HIGH RELIABILITY, LOW THRESHOLD		e3	30	260	8 pF
2N7002-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.115 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	13.5 ohm	.115 A	DUAL	R-PDSO-G3	1	Not Qualified	HIGH RELIABILITY, LOW THRESHOLD		e3	30	260	5 pF
FDV303N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.68 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.45 ohm	.68 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260
BSS138K-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.54 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	3.5 ohm	.31 A	DUAL	R-PDSO-G3					e3		260	2.2 pF
BSS123NH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	6 ohm	.19 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE		e3	30	260	3.1 pF	AEC-Q101
BSS138LT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	3.5 ohm	.2 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	40	260	5 pF
2N7002DWH6327XTSA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	3 ohm	.3 A	DUAL	R-PDSO-G6	1	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			3 pF
BSS138BKW,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	1.6 ohm	.32 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101
BSS138PS,115	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	1.6 ohm	.32 A	DUAL	R-PDSO-G6	1		LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101
BSS138-TP	Micro Commercial Components	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	3 ohm	.22 A	DUAL	R-PDSO-G3	1				e3	10	260
BSS138DW-7-F	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	.2 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	3.5 ohm	.2 A	DUAL	R-PDSO-G6	1	Not Qualified	HIGH RELIABILITY		e3	30	260	8 pF	AEC-Q101
2N7002	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.115 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	.2 W	150 Cel	SILICON	-55 Cel	Tin/Lead (Sn/Pb)	7.5 ohm	.115 A	DUAL	R-PDSO-G3				TO-236	e0			5 pF
2N7002,215	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.115 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-65 Cel	TIN	5 ohm	.3 A	DUAL	R-PDSO-G3	1	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-236AB	e3	30	260	10 pF
BSS84-7-F	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.13 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	10 ohm	.13 A	DUAL	R-PDSO-G3	1	Not Qualified	HIGH RELIABILITY, LOW THRESHOLD		e3	30	260	12 pF
BSS123-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.17 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	6 ohm	.17 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260	6 pF
MMBF170LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.5 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	5 ohm	.5 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236AB	e3	40	260
2N7002-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.115 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	7.5 ohm	.115 A	DUAL	R-PDSO-G3	1	Not Qualified	LOW THRESHOLD	TO-236	e3	30	260	5 pF
BSS123,215	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.17 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	6 ohm	.15 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260	10 pF
BSS84PH6327XTSA2	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.17 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	8 ohm	.17 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE, AVALANCHE RATED		e3			3 pF	AEC-Q101
FDN306P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.5 W	150 Cel	SILICON	-55 Cel	MATTE TIN	.04 ohm	2.6 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260
FDV304P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.46 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	.35 W	150 Cel	SILICON	-55 Cel	MATTE TIN	1.1 ohm	.46 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	30	260	10 pF
LBSS138LT1G	Leshan Radio	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			3.5 ohm	.2 A	DUAL	R-PDSO-G3				TO-236AB		NOT SPECIFIED	NOT SPECIFIED	5 pF
2N7002LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.115 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	7.5 ohm	.115 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	30	260	5 pF
2N7002DWK-7	Diodes Incorporated																					MATTE TIN									e3		260
2N7002-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	7.5 ohm	.115 A	DUAL	R-PDSO-G3	1	Not Qualified	HIGH INPUT IMPEDANCE	TO-236AB	e3		260	5 pF	TS 16949
BSS123	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	10 ohm	.17 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	6 pF
BSS138K	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.22 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	2.5 ohm	.22 A	DUAL	R-PDSO-G3	1	Not Qualified	LOW THRESHOLD	TO-236AB	e3	30	260
BSS138P,215	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1140 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.36 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	1.6 ohm	.36 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE	TO-236AB	e3	30	260		AEC-Q101; IEC-60134
BSS123W-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.17 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	.2 W	150 Cel	SILICON	-55 Cel	MATTE TIN	6 ohm	.17 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260	6 pF
BSS123TA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	6 ohm	.17 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260	4 pF
2N7002DW-7-F	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	.115 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	7.5 ohm	.115 A	DUAL	R-PDSO-G6	1	Not Qualified	HIGH RELIABILITY		e3	30	260	5 pF
BSS138PW,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		Tin (Sn)	1.6 ohm	.32 A	DUAL	R-PDSO-G3	1		LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101
BSS83PH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	3 ohm	.33 A	DUAL	R-PDSO-G3	1	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	30	260	9 pF
SI2323DS-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.7 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.039 ohm	3.7 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236AB	e3	30	260	140 pF
BSS84,215	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.25 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.13 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	10 ohm	.13 A	DUAL	R-PDSO-G3	1	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-236AB	e3	30	260	12 pF
BSS84W-7-F	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.13 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	10 ohm	.13 A	DUAL	R-PDSO-G3	1	Not Qualified	LOW CAPACITANCE		e3	30	260	12 pF
FDN360P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	.08 ohm	2 A	DUAL	R-PDSO-G3	1	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	NOT SPECIFIED	NOT SPECIFIED
BSS84LT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.13 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	10 ohm	.13 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	10	260
BSS123Q-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.17 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	6 ohm	.17 A	DUAL	R-PDSO-G3	1				e3	30	260	6 pF	AEC-Q101
FDV301N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.22 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	5 ohm	.22 A	DUAL	R-PDSO-G3	1	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
2N7002LT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.115 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	7.5 ohm	.115 A	DUAL	R-PDSO-G3	1	Not Qualified		TO-236	e3	30	260	5 pF
FDN337N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.065 ohm	2.2 A	DUAL	R-PDSO-G3	1	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
FDS6681Z	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0046 ohm	20 A	DUAL	R-PDSO-G8	1	Not Qualified			e3	30	260
BSS138TA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	3.5 ohm	.2 A	DUAL	R-PDSO-G3	1	Not Qualified			e3	30	260	8 pF

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.