RF Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
CLF1G0035S-100P	NXP Semiconductors
MMBF5486	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	1 pF
SMMBFJ310LT3	Onsemi	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE		JUNCTION			SILICON		Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235	2.5 pF
PD84001	STMicroelectronics	N-CHANNEL	SINGLE	YES	6 W	PLASTIC/EPOXY	AMPLIFIER	18 V	13 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	1.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	1.5 A	DUAL	R-PDSO-F4	1	SOURCE	Not Qualified			e3	30	260
SHF-0189	Rf Micro Devices	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	9 V	12 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND	.384 A	3	SMALL OUTLINE	FET RF Small Signal	HETERO-JUNCTION	3.5 W	85 Cel	GALLIUM ARSENIDE			.2 A	SINGLE	R-PSSO-F3	2	SOURCE	Not Qualified
SHF-0189Z	Rf Micro Devices	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	9 V		FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND	.2 A	3	SMALL OUTLINE	FET RF Small Signal	HETERO-JUNCTION	.8 W	165 Cel	GALLIUM ARSENIDE		MATTE TIN	.2 A	SINGLE	R-PSSO-F3		SOURCE	Not Qualified			e3
2N3819/D27Z	National Semiconductor	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	ROUND	DEPLETION MODE	1			3	CYLINDRICAL		JUNCTION			SILICON				BOTTOM	O-PBCY-T3			Not Qualified		TO-92				4 pF
CLF1G0035S-100,112	NXP Semiconductors	N-CHANNEL																FET RF Small Signal			250 Cel
2N3819-E3	Vishay Intertechnology	P-CHANNEL	SINGLE	NO	.36 W	PLASTIC/EPOXY	SWITCHING	8 V		WIRE	ROUND	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	CYLINDRICAL	Other Transistors	JUNCTION		150 Cel	SILICON		Matte Tin (Sn)		BOTTOM	O-PBCY-W3	1		Not Qualified	LOW NOISE	TO-226AA	e3			4 pF
ATF-35143-TR1G	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5.5 V	16.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		4	SMALL OUTLINE	FET RF Small Signals	HIGH ELECTRON MOBILITY	.3 W	160 Cel	SILICON		MATTE TIN		DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE		e3	20	260
JANTX2N3822	Defense Logistics Agency	N-CHANNEL	SINGLE	NO		METAL		50 V		WIRE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	CYLINDRICAL		JUNCTION			SILICON				BOTTOM	O-MBCY-W4			Qualified						3 pF	MIL-19500/375G
BF511,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	20 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN	.03 A	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3	30	260	.4 pF
BF545A,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	30 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BF545B,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	30 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260
MMBF5484	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	DEPLETION MODE	1			3	SMALL OUTLINE	Other Transistors	JUNCTION	.225 W	150 Cel	SILICON	-55 Cel	MATTE TIN		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	1 pF
JAN2N3822	Defense Logistics Agency	N-CHANNEL	SINGLE	NO		METAL		50 V		WIRE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	CYLINDRICAL		JUNCTION			SILICON				BOTTOM	O-MBCY-W4			Qualified						3 pF	MIL-19500/375G
NE34018-T1	Renesas Electronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	14 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	S BAND		4	SMALL OUTLINE		HETERO-JUNCTION			SILICON		TIN LEAD	.03 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
ATF-36077TR1	Hewlett Packard	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	3 V	11 dB	FLAT	UNSPECIFIED	DEPLETION MODE	1	KU BAND		4	MICROWAVE		HIGH ELECTRON MOBILITY			SILICON				UNSPECIFIED	X-CXMW-F4		SOURCE	Not Qualified
ATF-36077-TR1	Broadcom	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	3 V	11 dB	FLAT	ROUND	DEPLETION MODE	1	KU BAND		4	DISK BUTTON		HIGH ELECTRON MOBILITY			GALLIUM ARSENIDE		GOLD		RADIAL	O-CRDB-F4	1	SOURCE	Not Qualified	LOW NOISE		e4		260
ATF-54143-BLKG	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.12 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.725 W	150 Cel	GALLIUM ARSENIDE		MATTE TIN	.12 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
ATF-54143-TR1	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.12 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.725 W	150 Cel	GALLIUM ARSENIDE		TIN LEAD	.12 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
2N3823	Texas Instruments	N-CHANNEL	SINGLE	NO	.3 W	METAL	AMPLIFIER	30 V		WIRE	ROUND	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		4	CYLINDRICAL	Other Transistors	JUNCTION		200 Cel	SILICON				BOTTOM	O-MBCY-W4		ISOLATED	Not Qualified		TO-72		NOT SPECIFIED	NOT SPECIFIED	2 pF
ATF-36163-TR1G	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	3 V	9.4 dB	GULL WING	RECTANGULAR	DEPLETION MODE	1	KU BAND	.04 A	6	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.18 W	150 Cel	GALLIUM ARSENIDE		MATTE TIN	.04 A	DUAL	R-PDSO-G6	1		Not Qualified	LOW NOISE		e3		260
BF2030WE6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W	PLASTIC/EPOXY	AMPLIFIER	10 V	20 dB	GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.04 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.04 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified	LOW NOISE				260
BF556A,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	30 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		TIN		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
CLF1G0035-50,112	NXP Semiconductors	N-CHANNEL																FET RF Small Signal			250 Cel
FHX35LG	Fujitsu	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	4 V	8.5 dB	FLAT	ROUND	DEPLETION MODE	1	KU BAND		4	DISK BUTTON	FET RF Small Signal	HIGH ELECTRON MOBILITY	.29 W	175 Cel	GALLIUM ARSENIDE				RADIAL	O-CRDB-F4		SOURCE	Not Qualified	HIGH RELIABILITY
FHX35LG/002	Fujitsu	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	6 V		FLAT	UNSPECIFIED	DEPLETION MODE	1			4	DISK BUTTON	FET RF Small Signal	HIGH ELECTRON MOBILITY	.29 W	175 Cel	SILICON				UNSPECIFIED	X-CXDB-F4		SOURCE	Not Qualified	LOW NOISE
MMBFJ310LT1	Onsemi	N-CHANNEL	SINGLE	YES	.225 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235	2.5 pF
SMMBFJ310LT1	Onsemi	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	SMALL OUTLINE		JUNCTION			SILICON		TIN LEAD		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0			2.5 pF
2N4416APBFREE	Central Semiconductor	N-CHANNEL		NO	.3 W													Other Transistors	JUNCTION		200 Cel			MATTE TIN OVER NICKEL									e3
2N4416ATIN/LEAD	Central Semiconductor	N-CHANNEL		NO	.3 W													Other Transistors	JUNCTION		200 Cel			TIN LEAD									e0
ATF-531P8-BLK	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	7 V	18.5 dB	NO LEAD	SQUARE	ENHANCEMENT MODE	1	C BAND	.3 A	8	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	1 W	150 Cel	SILICON		MATTE TIN	.3 A	DUAL	S-PDSO-N8	1	SOURCE	Not Qualified	LOW NOISE	MO-229	e3		260
ATF-55143-BLKG	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.1 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.27 W	150 Cel	SILICON		MATTE TIN	.1 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	20	260
2N4416-E3	Vishay Intertechnology	N-CHANNEL	SINGLE	NO	.3 W	METAL	SWITCHING		10 dB	WIRE	ROUND	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		4	CYLINDRICAL	Other Transistors	JUNCTION		150 Cel	SILICON		MATTE TIN		BOTTOM	O-MBCY-W4	1		Not Qualified	LOW NOISE	TO-206AF	e3			.8 pF
ATF-55143	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		4	SMALL OUTLINE		HIGH ELECTRON MOBILITY			SILICON			.1 A	DUAL	R-PDSO-G4							NOT SPECIFIED	NOT SPECIFIED
ATF-55143-TR1	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	5 V	15.5 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.1 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.27 W	150 Cel	SILICON		TIN LEAD	.1 A	DUAL	R-PDSO-G4		SOURCE	Not Qualified			e0
BF1105R,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	7 V		GULL WING	RECTANGULAR	DUAL GATE, ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.03 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Tin (Sn)	.03 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified			e3	30	260	.04 pF
BF510,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	20 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Tin (Sn)	.03 A	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE		e3	30	260	.4 pF
CLF1G0035S-100PU	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V		FLAT	RECTANGULAR	DEPLETION MODE	2	S BAND		4	FLATPACK		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE				DUAL	R-CDFP-F4		SOURCE								IEC-60134
NE3508M04-T2-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	.175 W	PLASTIC/EPOXY	AMPLIFIER	3 V	12 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		4	SMALL OUTLINE	Other Transistors	HETERO-JUNCTION		150 Cel	SILICON		TIN BISMUTH	.03 A	DUAL	R-PDSO-F4		DRAIN	Not Qualified	LOW NOISE		e6
NE3512S02-T1C-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	.165 W	PLASTIC/EPOXY	AMPLIFIER	3 V	12.5 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	KU BAND		4	MICROWAVE	Other Transistors	HETERO-JUNCTION		125 Cel	SILICON		TIN BISMUTH	.015 A	QUAD	R-PQMW-F4			Not Qualified	LOW NOISE		e6
QPD1008	Qorvo																																	NOT SPECIFIED	NOT SPECIFIED
SAV-541+	Mini-circuits	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER		15 dB	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	.12 A	4	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY	.36 W	85 Cel	SILICON		MATTE TIN	.12 A	DUAL	R-PDSO-G4			Not Qualified			e3
VMMK-1218-TR1G	Broadcom	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER	5 V	6.7 dB	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	KU BAND	.1 A	3	CHIP CARRIER	FET RF Small Signal	HIGH ELECTRON MOBILITY	.3 W		GALLIUM ARSENIDE		MATTE TIN	.1 A	BOTTOM	R-XBCC-N3	1	SOURCE	Not Qualified			e3		260
PMBFJ308,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.25 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	DEPLETION MODE	1	VERY HIGH FREQUENCY BAND		3	SMALL OUTLINE	Other Transistors	JUNCTION		150 Cel	SILICON		Tin (Sn)		DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260	2.5 pF
2N5486G	Onsemi	N-CHANNEL	SINGLE	NO	.31 W	PLASTIC/EPOXY	AMPLIFIER		10 dB	THROUGH-HOLE	ROUND	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		3	CYLINDRICAL	Other Transistors	JUNCTION		150 Cel	SILICON		TIN SILVER COPPER	.03 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260	1 pF
BF998,235	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	AMPLIFIER	12 V		GULL WING	RECTANGULAR	DUAL GATE, DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	.03 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.03 A	DUAL	R-PDSO-G4		SOURCE		LOW NOISE		e3	30	260		IEC-134

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.