Onsemi EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
CAT24C256WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4	40	260	.000001 Amp	4.9 mm
CAT24M01WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	1	EEPROMs	100	1.27 mm	85 Cel			128KX8	128K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ	e4	40	260	.000002 Amp	4.9 mm
CAT25256VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4	40	260	.000001 Amp	4.9 mm
CAT24C512WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260	.000002 Amp	4.9 mm
CAT24C64WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	5	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V	100 YEAR DATA RETENTION	e4	40	260	.000003 Amp	4.9 mm
CAT25512VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			64KX8	64K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V	100 YEAR DATA RETENTION	e4	40	260	.000001 Amp	4.9 mm
CAT24C32WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	5	1.8/5	8	SMALL OUTLINE			EEPROMs		1.27 mm	85 Cel			4KX8	4K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	100 YEAR DATA RETENTION	e4	40	260		4.9 mm
CAT24C256HU4IGT3	Onsemi	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	32768 words	5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260	.000001 Amp	3 mm
CAT24C512HU5IGT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		65536 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				100	.5 mm	85 Cel			64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	1	5.5 V	.55 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260		3 mm
CAT25128VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	16384 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260	.000001 Amp	4.9 mm
CAT24C04WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3	1.8/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e4	30	260	.000001 Amp	4.9 mm
CAT24C02TDI-GT3A	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3	1.8/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4	30	260	.000001 Amp	2.9 mm
CAT24C256YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	4.4 mm
CAT25640VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V	100 YEAR DATA RETENTION	e4	40	260	.000001 Amp	4.9 mm
CAT24C16WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e4	30	260	.000001 Amp	4.9 mm
CAT24C16WIGT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3		8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel			2KX8	2K	-40 Cel		1010MMMR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	16384 bit	1.7 V					.000001 Amp	4.9 mm
CAT24C128WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3	2/5	8	SMALL OUTLINE	SOP8,.25	1	EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	5MICROAMP STANDBY CURRENT AVAILABLE @ 125 TEMP, AND OPERATES WITH 1.8VMIN SUPPLY @ 0.1MHZ	e4	30	260	.000002 Amp	4.9 mm		3.3
CAT24C512WI-GT3JN	Onsemi	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	65536 words	5		8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel			64KX8	64K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	524288 bit	2.5 V	ALSO OPERATES AT 0.4MHZ AT 1.8V-5.5V SUPPLY	e4			.000002 Amp	4.9 mm		5
CAT24AA16TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.95 mm	85 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G5	1	5.5 V	1 mm		.4 MHz	2.8 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e4	30	260		2.9 mm
CAT25256YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4	40	260	.000001 Amp	4.4 mm
CAT24C02WI-GT3A	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4	30	260	.000001 Amp	4.9 mm
CAT24C08WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		3-STATE	8KX1	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e4	30	260	.000001 Amp	4.9 mm		3.3
CAT24M01YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	1	EEPROMs	100	.65 mm	85 Cel			128KX8	128K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ	e4	40	260	.000002 Amp	4.4 mm
CAT24C02WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4	30	260	.000001 Amp	4.9 mm
CAT24M01HU5I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel			128KX8	128K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V		e4	40	260	.000002 Amp	3 mm
CAT24C256WI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V		e4	30	260	.000001 Amp	4.9 mm
CAT24C512YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260	.000002 Amp	4.4 mm
CAT25160VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V	100 YEAR DATA RETENTION	e4	30	260	.000002 Amp	4.9 mm
CAT24C32HU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			EEPROMs		.5 mm	85 Cel			4KX8	4K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-N8	1	5.5 V	.55 mm		1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	100 YEAR DATA RETENTION	e4	40	260		3 mm
CAT24C32YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			EEPROMs		.65 mm	85 Cel			4KX8	4K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	100 YEAR DATA RETENTION	e4	40	260		4.4 mm
CAT24C16YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	5		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel			16KX1	16K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e4			.000001 Amp	4.4 mm
CAT24C16YIGT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	16384 bit	1.7 V		e4	30	260	.000001 Amp	4.4 mm
CAT25160YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V	100 YEAR DATA RETENTION	e4	30	260	.000002 Amp	4.4 mm
CAT25512YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			64KX8	64K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V	100 YEAR DATA RETENTION	e4	40	260	.000001 Amp	4.4 mm
CAT24C64YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V	100 YEAR DATA RETENTION	e4	40	260	.000003 Amp	4.4 mm
CAT24AA01TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V		e4	30	260	.000001 Amp	2.9 mm
CAT24C128HU4IGT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	1	EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	5MICROAMP STANDBY CURRENT AVAILABLE @ 125 TEMP, AND OPERATES WITH 1.8VMIN SUPPLY @ 0.1MHZ	e4	30	260	.000002 Amp	3 mm		3.3
CAT24C64WI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	1.8	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		e4	30	260	.000003 Amp	4.9 mm
CAT24AA02TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4	30	260	.000001 Amp	2.9 mm
CAT93C66VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel			256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260	.00001 Amp	4.9 mm
CAT24C04YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3	1.8/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e4	30	260	.000001 Amp	4.4 mm
CAV24C64WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	5		1	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel	NO		64KX1	64K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	65536 bit	2.5 V		e4	30	260	.000005 Amp	4.9 mm	.0035 ns	5
CAT24C04WI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	3.3	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e4	30	260	.000001 Amp	4.9 mm
CAV24C02WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.6		1	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel		3-STATE	2KX1	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	100 YEAR DATA RETENTION	e4	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm		3.6
CAT25M01VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5		8	SMALL OUTLINE		1			1.27 mm	85 Cel			128KX8	128K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		5 MHz	3.9 mm		5 ms	SPI	1048576 bit	1.8 V		e4	40	260		4.9 mm
CAT24C04C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3	1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		EEPROMs	100	.4 mm	85 Cel			4KX1	4K	-40 Cel	TIN SILVER COPPER	1010000R	BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e1	30	260	.000001 Amp	.86 mm
CAT24C208WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	2.7/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			1KX8	1K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	2		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V		e4	30	260	.00005 Amp	4.9 mm
CAV25256VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		32768 words	5		8	SMALL OUTLINE					1.27 mm	125 Cel			32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		5 ms	SPI	262144 bit	2.5 V		e4	NOT SPECIFIED	NOT SPECIFIED		4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.