RF Small Signal Field Effect Transistors (FET)
| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Package Body Material | Transistor Application | Minimum DS Breakdown Voltage | Minimum Power Gain (Gp) | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Minimum Operating Temperature | Terminal Finish | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Broadcom |
N-CHANNEL |
SINGLE |
YES |
METAL |
AMPLIFIER |
5.5 V |
13.5 dB |
NO LEAD |
RECTANGULAR |
DEPLETION MODE |
1 |
X BAND |
4 |
SMALL OUTLINE |
FET RF Small Signal |
HIGH ELECTRON MOBILITY |
.4 W |
160 Cel |
SILICON |
GOLD |
DUAL |
R-MDSO-N4 |
1 |
Not Qualified |
LOW NOISE |
e4 |
260 |
||||||||||
|
Broadcom |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
5.5 V |
13.5 dB |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
X BAND |
4 |
SMALL OUTLINE |
FET RF Small Signal |
HIGH ELECTRON MOBILITY |
.6 W |
160 Cel |
SILICON |
TIN LEAD |
DUAL |
R-PDSO-G4 |
SOURCE |
Not Qualified |
LOW NOISE |
e0 |
||||||||||||
|
|
Broadcom |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
4.5 V |
15 dB |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
X BAND |
4 |
SMALL OUTLINE |
HIGH ELECTRON MOBILITY |
GALLIUM ARSENIDE |
.145 A |
DUAL |
R-PDSO-G4 |
LOW NOISE |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||
|
|
Broadcom |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||
|
Samsung |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
VERY HIGH FREQUENCY BAND |
3 |
IN-LINE |
JUNCTION |
150 Cel |
SILICON |
SINGLE |
R-PSIP-T3 |
Not Qualified |
.15 pF |
|||||||||||||||||||
|
Samsung |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
VERY HIGH FREQUENCY BAND |
3 |
IN-LINE |
JUNCTION |
150 Cel |
SILICON |
SINGLE |
R-PSIP-T3 |
Not Qualified |
.15 pF |
|||||||||||||||||||
|
Samsung |
N-CHANNEL |
SINGLE |
NO |
.2 W |
PLASTIC/EPOXY |
AMPLIFIER |
WIRE |
ROUND |
DEPLETION MODE |
1 |
VERY HIGH FREQUENCY BAND |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
.15 pF |
|||||||||||||||||
|
Samsung |
SINGLE |
NO |
PLASTIC/EPOXY |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
|||||||||||||||||||||||||
|
Samsung |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
VERY HIGH FREQUENCY BAND |
3 |
SMALL OUTLINE |
JUNCTION |
150 Cel |
SILICON |
DUAL |
R-PDSO-G3 |
Not Qualified |
.15 pF |
|||||||||||||||||||
|
Samsung |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
VERY HIGH FREQUENCY BAND |
3 |
SMALL OUTLINE |
JUNCTION |
150 Cel |
SILICON |
DUAL |
R-PDSO-G3 |
Not Qualified |
.15 pF |
|||||||||||||||||||
|
Samsung |
SINGLE |
NO |
PLASTIC/EPOXY |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
|||||||||||||||||||||||||
|
Samsung |
SINGLE |
NO |
PLASTIC/EPOXY |
THROUGH-HOLE |
ROUND |
1 |
3 |
CYLINDRICAL |
SILICON |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
|||||||||||||||||||||||||
|
Samsung |
N-CHANNEL |
SINGLE |
YES |
.15 W |
PLASTIC/EPOXY |
15 V |
GULL WING |
RECTANGULAR |
DUAL GATE, ENHANCEMENT MODE |
1 |
VERY HIGH FREQUENCY BAND |
.03 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.03 A |
DUAL |
R-PDSO-G4 |
Not Qualified |
.05 pF |
||||||||||||||||
|
Samsung |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
VERY HIGH FREQUENCY BAND |
3 |
SMALL OUTLINE |
JUNCTION |
150 Cel |
SILICON |
DUAL |
R-PDSO-G3 |
Not Qualified |
.15 pF |
|||||||||||||||||||
|
Samsung |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
VERY HIGH FREQUENCY BAND |
3 |
IN-LINE |
JUNCTION |
150 Cel |
SILICON |
SINGLE |
R-PSIP-T3 |
Not Qualified |
.15 pF |
|||||||||||||||||||
|
Samsung |
N-CHANNEL |
SINGLE |
YES |
.2 W |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
VERY HIGH FREQUENCY BAND |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
DUAL |
R-PDSO-G3 |
Not Qualified |
.15 pF |
RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.
RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.
RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.
RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.