Silicon Controlled Switches (SCS)

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Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Package Body Material Terminal Form Package Shape Maximum On-state Current No. of Elements Maximum DC Emitter Current (NPN) Maximum Emitter To Base Voltage Limit (PNP) Maximum Anode To Cathode Voltage No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature JESD-30 Code Qualification Repetitive Peak Off-state Voltage Maximum Holding Current JEDEC-95 Code Maximum Emitter To Base Voltage Limit (NPN) Maximum DC Emitter Current (PNP) Maximum Peak Current

BRY62-TAPE-7

NXP Semiconductors

SILICON CONTROLLED SWITCH

SMALL OUTLINE

YES

DUAL

SINGLE

ANODE GATE

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

.175 A

70 V

4

150 Cel

R-PDSO-G4

Not Qualified

1 mA

5 V

.175 A

BRY39

NXP Semiconductors

PROGRAMMABLE UJT

CYLINDRICAL

NO

BOTTOM

SINGLE

ANODE GATE

METAL

WIRE

ROUND

1

1.4 V

4

O-MBCY-W4

Not Qualified

TO-72

.06 uA

BRY62

NXP Semiconductors

SILICON CONTROLLED SWITCH

SMALL OUTLINE

YES

DUAL

SINGLE

ANODE GATE

PLASTIC/EPOXY

GULL WING

RECTANGULAR

.175 A

1

.175 A

70 V

4

Other Trigger Devices

150 Cel

-65 Cel

R-PDSO-G4

Not Qualified

70 V

1 mA

5 V

.175 A

BRY39(P)

NXP Semiconductors

PROGRAMMABLE UJT

CYLINDRICAL

NO

BOTTOM

SINGLE

ANODE GATE

METAL

WIRE

ROUND

1

4

150 Cel

O-MBCY-W4

Not Qualified

TO-72

.06 uA

BRY62T/R

NXP Semiconductors

SILICON CONTROLLED SWITCH

SMALL OUTLINE

YES

DUAL

SINGLE

ANODE GATE

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

.175 A

70 V

4

150 Cel

R-PDSO-G4

Not Qualified

1 mA

5 V

.175 A

BRY62-TAPE-13

NXP Semiconductors

SILICON CONTROLLED SWITCH

SMALL OUTLINE

YES

DUAL

SINGLE

ANODE GATE

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

.175 A

70 V

4

150 Cel

R-PDSO-G4

Not Qualified

1 mA

5 V

.175 A

BRY62-T

NXP Semiconductors

SILICON CONTROLLED SWITCH

SMALL OUTLINE

YES

DUAL

SINGLE

ANODE GATE

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

.175 A

70 V

4

150 Cel

R-PDSO-G4

Not Qualified

1 mA

5 V

.175 A

BRY39(S)

NXP Semiconductors

SILICON CONTROLLED SWITCH

CYLINDRICAL

NO

BOTTOM

SINGLE

ANODE GATE

METAL

WIRE

ROUND

1

.175 A

70 V

4

150 Cel

O-MBCY-W4

Not Qualified

1 mA

TO-72

5 V

.175 A

BR101

NXP Semiconductors

SILICON CONTROLLED SWITCH

CYLINDRICAL

NO

BOTTOM

SINGLE

ANODE GATE

METAL

WIRE

ROUND

1

.175 A

50 V

4

150 Cel

O-MBCY-W4

Not Qualified

1 mA

TO-72

5 V

.175 A

Silicon Controlled Switches (SCS)

Silicon Controlled Switches (SCS) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are similar to Silicon Controlled Rectifiers (SCRs) but have additional features that allow for greater control and flexibility.

SCSs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCS is designed to conduct current only in one direction, from the anode to the cathode.

SCSs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a voltage pulse to trigger the device. Once triggered, the SCS conducts current until the voltage across the device drops below a certain level, at which point it turns off.

SCSs have additional features such as the ability to control the turn-on and turn-off times of the device, allowing for greater control over the flow of current. They also have lower holding currents and faster turn-off times than SCRs, making them suitable for high-speed applications.

SCSs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.