BLF521 by NXP Semiconductors | Vyrian | Semiconductor & Electronic Component Distributor

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLF521
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Transistor Element Material: SILICON;
Datasheet	BLF521 Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	1 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	10 W
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-CRDB-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	10 W
Moisture Sensitivity Level (MSL):	NOT APPLICABLE
Minimum Power Gain (Gp):	10 dB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	1 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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