Onsemi - SMMBFJ309LT1G

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Operating Mode: DEPLETION MODE;

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-MBCY-W4; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; JESD-30 Code: O-MBCY-W4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Operating Mode: DEPLETION MODE; No. of Elements: 1;

N-CHANNEL; Maximum Operating Temperature: 250 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; JESD-30 Code: O-PBCY-T3; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Application: AMPLIFIER; No. of Terminals: 4;

N-CHANNEL; Maximum Power Dissipation Ambient: .2 W; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .03 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-72;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .05 A; JEDEC-95 Code: TO-92;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Transistor Application: AMPLIFIER; JESD-30 Code: R-PQMW-F4;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Terminal Position: DUAL; Terminal Finish: TIN;