NXP Semiconductors - BLF184XRS

BLF184XRS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF184XRS
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Minimum Power Gain (Gp): 22.8 dB;
Datasheet BLF184XRS Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 22.8 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 135 V
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Reference Standard: IEC-60134
Case Connection: SOURCE
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