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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
DS24B33S+T&R	Analog Devices	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		4096 words			3/5	1	SMALL OUTLINE	SOP8,.3		EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			S-PDSO-G8	1	5.25 V	2.13 mm	50000 Write/Erase Cycles		5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260			5.31 mm
DS24B33S+	Analog Devices	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		4096 words			3/5	1	SMALL OUTLINE	SOP8,.3		EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			S-PDSO-G8	1	5.25 V	2.13 mm	50000 Write/Erase Cycles		5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260			5.31 mm
24AA02E48T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		1.8/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.1MHZ	e3	40	260		.000001 Amp	2.9 mm	5
XCF01SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3		1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel			1MX1	1M	-40 Cel		Matte Tin (Sn)			DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
24LC64-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	30	260		.000001 Amp	4.9 mm	4.5
24LC256-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	40	260		.0000015 Amp	5.26 mm	4.5
24LC256-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	4.5
DS2431P/TR	Dallas Semiconductor	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn)			DUAL		HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260			3.94 mm		NO
DS2431P/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0	20	240			3.94 mm
DS2431P+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed			DUAL		HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260			3.94 mm		NO
24LC16BT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3		260		.000001 Amp	2.95 mm	5
24AA025E48T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		1.8/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz	e3		260		.000001 Amp	2.9 mm	5
25LC256-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	NO	3-STATE	32KX8	32K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	30	260		.000001 Amp	4.9 mm	2.5
AT25256B-SSHL-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ	e4				.000005 Amp	4.9 mm	5
XCF32PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	33554432 words	1.8		1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	20	.5 mm	85 Cel			32MX1	32M	-40 Cel		Matte Tin (Sn)			DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified			33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	18.45 mm
DS2431P-A1+T	Analog Devices	EEPROM	AUTOMOTIVE	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	125 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	4.5 V		e3	30	260			3.94 mm
25LC256T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	NO	3-STATE	32KX8	32K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		e3	30	260		.000001 Amp	4.9 mm	2.5
CAT24C256WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4	40	260		.000001 Amp	4.9 mm
XCF02SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words	3.3		1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel			2MX1	2M	-40 Cel		Matte Tin (Sn)			DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			2097152 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
CAT24M01WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25	1	EEPROMs	100	1.27 mm	85 Cel			128KX8	128K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ	e4	40	260		.000002 Amp	4.9 mm
DS2431P-A1+	Analog Devices	EEPROM	AUTOMOTIVE	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	125 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	4.5 V		e3	30	260			3.94 mm
DS2431P	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		Tin/Lead (Sn/Pb)			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0	20	240			3.94 mm
DS2431P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed			DUAL		HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260			3.94 mm		NO
AT25256B-SSHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ	e4	40	260		.000005 Amp	4.925 mm	5
DS24B33Q+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words	4.5			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			4KX1	4K	-40 Cel					DUAL			S-PDSO-N6		5.25 V	.8 mm			3 mm			1-WIRE	4096 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED			3 mm
93LC56BT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	3	YES		16	SMALL OUTLINE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V		e3		260		.000001 Amp	2.9 mm
24LC16B-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3	30	260		.000001 Amp	4.9 mm	5
M24M02-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			256KX8	256K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2097152 bit	1.8 V		e4	30	260		.000002 Amp	4.9 mm
XCF04SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4194304 words	3.3		1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories		.65 mm	85 Cel			4MX1	4M	-40 Cel		TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	1.19 mm		33 MHz	4.4 mm	Not Qualified			4194304 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE	.001 Amp	6.5024 mm
DS2430AP/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		256 words	5		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		TIN LEAD			DUAL			R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0					3.94 mm
DS2430AP+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		256 words	5		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260			3.94 mm
24AA025E48-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.1MHZ	e3	30	260		.000001 Amp	4.9 mm	5
DS28EC20P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS	.9 mA	20480 words			5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	200000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	20480 bit	4 V		e3	30	260			3.94 mm
25LC1024-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		Flash Memories	200	1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	20 MHz	5.25 mm	Not Qualified	6 ms	SPI	1048576 bit	4.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD	e3	40	260	NOR TYPE	.000012 Amp	5.26 mm	5
DS24B33+T&R	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words			3/5	1	CYLINDRICAL	SIP3,.1,50		EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM			O-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	4096 bit	2.8 V		e3	20	250
24LC256T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	30	260		.000005 Amp	4.9 mm	4.5
24LC256-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO		32KX8	32K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3		260		.000001 Amp	4.9 mm
AT24C64D-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz	e4		260		.000006 Amp	4.925 mm	3
DS24B33+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words			3/5	1	CYLINDRICAL	SIP3,.1,50		EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM			O-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	4096 bit	2.8 V		e3	20	250
AT24C02D-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words	3		1.8/3.3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ	e4				.0000008 Amp	4.925 mm	3
25AA02E48-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		3-STATE	256X8	256	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @5MHZ AND 1.8V TO 2.5V @3MHZ	e3	30	260		.000001 Amp	4.9 mm	5
DS24B33Q+U	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	5.25 V	.8 mm			3 mm			1-WIRE	4096 bit	2.8 V		e3	30	260			3 mm
24LC64T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3		260		.000001 Amp	2.9 mm	4.5
24LC64-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3				.000001 Amp	9.271 mm	4.5
DS24B33G+T&R	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		4096 words	4.5			1	CHIP CARRIER, VERY THIN PROFILE						85 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD			BOTTOM			S-XBCC-B2		5.25 V	1 mm			6 mm			1-WIRE	4096 bit	2.8 V		e4					6 mm
25LC512-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		2.5/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz	e3	30	260		.00001 Amp	4.9 mm	5
24LC64-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3	40	260		.000001 Amp	4.9 mm	5
24LC32A-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5			8	SMALL OUTLINE				200	1.27 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	30	260			4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.