Varactor Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
BB640E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN	R-PDSO-G2	1		Not Qualified							e3			SILICON	19.5
2803	Api Technologies	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified		10 pF		DO-7		22 V				SILICON	4.9
BB135,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified		19.25 pF				30 V	e3	30	260	SILICON	8.9
1N5446A	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	18 pF	HIGH RELIABILITY	DO-7	10 %	30 V	e0			SILICON	2.6
SMVA1248-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel		R-PDSO-F2				.25 W	17 pF				15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	10.8	AEC-Q101
BBY5702VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE																			TIN		1									e3
SMV1236-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	15 V	175 Cel	-55 Cel		R-PBCC-N2	1		Not Qualified	.25 W	17 pF	LOW NOISE		8.82 %	15 V			260	SILICON	1.6
BB639E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1				38.3 pF	LOW INDUCTANCE		5.26 %	30 V	e3			SILICON	9.8
MA46H120	TE Connectivity	VARIABLE CAPACITANCE DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	3000	UNSPECIFIED	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	15 V				R-XDSO-N2			Not Qualified	.1 W	1.1 pF				20 V				GALLIUM ARSENIDE
BB914E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE					TIN	R-PDSO-G3	1		Not Qualified		43.75 pF	1.5% MATCHED SETS AVAILABLE		2.86 %	18 V	e3			SILICON	2.28
SMV1249-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	600	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified	.25 W	31 pF				15 V	e3		260	SILICON	11
BBY6602VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE																			TIN		1									e3
BB814E6327GR1HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE																			TIN		1									e3
SMV1247-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	1500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	7 pF				15 V	e3	40	260	SILICON	9.5
BBY6502VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	1				29.5 pF			4.41 %	15 V	e3			SILICON	10
BB844E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G3	1				43.75 pF	CAPACITANCE MATCHED TO 1.5%		2.86 %	18 V	e3			SILICON	3.2
SMV1232-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	1400	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			TIN	R-PDSO-F2	1		Not Qualified	.25 W	2.6 pF	LOW NOISE		10 %	15 V	e3		260	SILICON	1.5
BBY5303WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2	1				5.3 pF			9.43 %	6 V	e3			SILICON	1.8
KVX2162-23-0	Microchip Technology	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO L BAND	.05 uA	1		SMALL OUTLINE	Varactors	22 V	125 Cel	-55 Cel		R-PDSO-G3			Not Qualified		10 pF	HIGH RELIABILITY		10 %	22 V				SILICON
1N5470B	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF	HIGH RELIABILITY	DO-7	5 %	30 V	e0			SILICON	2.9
BB639CE7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1				39 pF			7.01 %	35 V	e3			SILICON	9.5
GC1719-192	Microchip Technology	VARIABLE CAPACITANCE DIODE						800		SINGLE	ABRUPT	VERY HIGH FREQUENCY TO KU BAND	.02 uA	1	55 V				125 Cel	-55 Cel							33 pF			10 %	60 V				SILICON	7
SMVA1470-004LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	2	10 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3	1			.25 W	70 pF	LOW NOISE		6 %	10 V			260	SILICON	5	AEC-Q101
BBY40,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified		26 pF				30 V	e3	30	260	SILICON	5
SMV1213-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	12 V	175 Cel	-55 Cel		R-XBCC-N2	1		Not Qualified		19 pF				16 V			260	SILICON	2
BBY5502VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-F2	1				18.6 pF			5.66 %	16 V	e3			SILICON	2
KVX2162-23-0/TR	Microchip Technology	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO L BAND	.05 uA	1		SMALL OUTLINE		22 V	125 Cel	-55 Cel		R-PDSO-G3					10 pF	HIGH RELIABILITY		10 %	22 V				SILICON
1N5470A	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF	HIGH RELIABILITY	DO-7	10 %	30 V	e0			SILICON	2.9
BB131,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V			TIN		1				12 pF					e3	30	260
SMV2019-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	22 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	.8 pF	LOW NOISE		18.75 %	22 V	e3	40	260	SILICON	2.3
BB171X	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE		32 V	125 Cel	-55 Cel		R-PDSO-G2	1				57 pF			8.77 %	32 V			260	SILICON	20.6	IEC-60134
JDV2S41FS(TPL3)	Toshiba	VARIABLE CAPACITANCE DIODE				YES											Varactors	15 V									15 pF
BB659C02VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-F2					39 pF			7.01 %	35 V	e3			SILICON	9.5
BBY5303WE6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2					5.3 pF			9.43 %	6 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
1SV325,H3F	Toshiba	VARIABLE CAPACITANCE DIODE
BBY5802VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	1				18.3 pF			4.89 %	10 V	e3			SILICON	1.15
MA46H202-1056	TE Connectivity	VARIABLE CAPACITANCE DIODE				YES		2000									Varactors	22 V									2.7 pF
SMV1430-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY							CHIP CARRIER						R-PBCC-N2	1		Not Qualified									260	SILICON
SMVA1253-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel		R-PDSO-F2				.25 W	53 pF				15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	11	AEC-Q101
1SV290	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.01 uA	1	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-F2			Not Qualified		45.25 pF	2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR		9.39 %	30 V	e0			SILICON	15
1SV290(TPH2)	Toshiba	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V
1SV290B	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	35 V	125 Cel		TIN LEAD	R-PDSO-F2			Not Qualified			2% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR		9.39 %	30 V	e0			SILICON	14.8
BB639-E7904	Infineon Technologies	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V			MATTE TIN		1				38.3 pF					e3		260
BB639-E7904XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2					38.3 pF			5.26 %	30 V	e3			SILICON	9.8
SMV2025-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	1	19 V	CHIP CARRIER		20 V	175 Cel	-55 Cel		R-PBCC-N2				.25 W	4.65 pF			9.68 %	20 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.2
1SV325(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE				YES					ABRUPT					SMALL OUTLINE	Varactors	10 V
BB175X	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES											Varactors	32 V			TIN		1									e3	30	260
BB202,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	6 V	85 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified					8.59 %		e3	30	260	SILICON	2.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.