STMicroelectronics OTP ROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C512-90C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	13.97 mm	90 ns
M27C512-90B6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.83 mm	90 ns
M27C256B-90C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	90 ns	12.75
M27C256B-10C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V	12.75V PROGRAMMING VOLTAGE	e3			.0001 Amp	13.97 mm	100 ns	12.75
M27C256B-15C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	150 ns	12.75
M27C512-12B1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.83 mm	120 ns
M27C512-70C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	13.97 mm	70 ns
M27C2001-10B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	41.91 mm	100 ns
5962-8873503LA	STMicroelectronics	OTP ROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0				31.877 mm	15 ns
M27C256B-12C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	120 ns	12.75
M27C256B-12C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	120 ns	12.75
M27C512-90B1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.83 mm	90 ns
M27C512-45C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	13.97 mm	45 ns
M27C512-90C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	13.97 mm	90 ns
M27C512-70C6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	13.97 mm	70 ns
M27C1001-35C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	35 ns
M27C512-10C6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	13.97 mm	100 ns
M27C1001-10C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	100 ns
M27C1001-45XB1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	42.035 mm	45 ns
M27C1001-70C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	70 ns
M27C1001-12C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	120 ns
M27C256B-70C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	70 ns	12.75
M27C256B-90C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	90 ns	12.75
M27C512-15B1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V					.0001 Amp	36.83 mm	150 ns
M27C512-15B6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.83 mm	150 ns
M27C512-15C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V					.0001 Amp	13.97 mm	150 ns
M27C1001-15C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	150 ns
M27C256B-90B1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.83 mm	90 ns	12.75
M27C4001-10C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	13.97 mm	100 ns
M27C4001-12C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	13.97 mm	100 ns
M27C512-12C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	13.97 mm	120 ns
M27C512-12C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	13.97 mm	120 ns
M27W101-80K6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32	3.6 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	2.7 V		e3			.000015 Amp	13.97 mm	80 ns
M27W101-80K6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32	3.6 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	2.7 V		e3			.000015 Amp	13.97 mm	80 ns
WS57C256F-35J	STMicroelectronics	OTP ROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.455 mm	Not Qualified	262144 bit	4.5 V		e0			.0002 Amp	13.995 mm	35 ns	12.75
M27C1001-10B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	100 ns
M27C1001-45XC1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.25 V	3.56 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	13.97 mm	45 ns
M27C256B-12XC1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.25 V	3.56 mm	11.43 mm	Not Qualified	262144 bit	4.75 V		e3			.0002 Amp	13.97 mm	120 ns	12.75
M27C4001-10B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	42.035 mm	100 ns
M27C801-100K1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	5.5 V	3.56 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e3			.0001 Amp	13.97 mm	100 ns
M27V801-120N6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	OTP ROMs	.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32	3.63 V	1.2 mm	8 mm	Not Qualified	8388608 bit	2.97 V		e0			.00002 Amp	18.4 mm	120 ns
M27V322-100P6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE	DIP42,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	3.6 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	3 V		e3			.00006 Amp	52.455 mm	100 ns
M27V405-200K6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Other Memory ICs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	3.63 V	3.56 mm	11.455 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	13.995 mm	200 ns
M27W512-100K6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	QUAD	R-PQCC-J32	3.6 V	3.556 mm	11.43 mm	Not Qualified	524288 bit	2.7 V		e3			.000015 Amp	13.97 mm	100 ns
M27W512-200N6E	STMicroelectronics	OTP ROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	85 Cel		64KX8	64K	-40 Cel	TIN/TIN BISMUTH	DUAL	R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	524288 bit	2.7 V		e3/e6	NOT SPECIFIED	260		11.8 mm	100 ns
M87C257-20C7TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32				Not Qualified	262144 bit			e3			.0001 Amp		200 ns
M87C257-90XC6XTR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32			11.455 mm		262144 bit			e3			.0001 Amp	13.995 mm	90 ns
M27W402-100N6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		256KX16	256K	-40 Cel	TIN	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.7 V	THIS SPEED ALSO GUARANTEES 80NS ACCESS TIME AT VCC = 3.0V TO 3.6V	e3				18.4 mm	100 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.