EPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C256B-10F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	100 ns	12.75
M27C256B-12F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	120 ns	12.75
M27C256B-15F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	150 ns	12.75
M27C256B-70XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	36.92 mm	70 ns	12.75
M27C512-15F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.92 mm	150 ns
EPC2TI32N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	7 mm		3.3
M27C512-15F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.92 mm	150 ns
M27C512-90F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	90 ns
EPC2LC20N	Intel	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	CHIP CARRIER	LCC20,.39SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	245	.0001 Amp	8.9662 mm		3.3
M27C512-12F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	120 ns
M27C512-10F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	100 ns
EPC2LI20N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	CHIP CARRIER	LCC20,.39SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	8.9662 mm		3.3
M27C512-15F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	150 ns
M27C1001-10F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	100 ns
M27C1001-12F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	120 ns
M27C1001-15F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	150 ns
EPC2LI20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	8.9662 mm		3.3
EPC2TC32N	Intel	CONFIGURATION MEMORY	COMMERCIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	260	.0001 Amp	7 mm		3.3
EPC1441PI8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	9.398 mm		3.3
M27C256B-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	120 ns	12.75
M27C512-12F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	120 ns
M27C1001-10F1L	STMicroelectronics		COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32					Not Qualified	1048576 bit			e0			.0001 Amp		100 ns
EPC1441TC32N	Intel	CONFIGURATION MEMORY	COMMERCIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.00006 Amp	7 mm		3.3
M27C512-10F1E	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	100 ns
M27C64A-10F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	100 ns	12.5
EPC1PI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	3.3/5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	MATTE TIN	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	9.398 mm		3.3
M27C512-10F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	100 ns
M27C512-12F1E	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	120 ns
AM27C512-120DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				70 Cel		64KX8	64K	0 Cel		DUAL	R-CDIP-T28		5.5 V				524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			120 ns
EPC2TI32	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	7 mm		3.3
M27C4001-15F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	100 ns
M27C1001-10F1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-GDIP-T32		5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	41.885 mm	100 ns
M27C2001-10F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	Matte Tin (Sn)	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3	10	245	.0001 Amp	41.885 mm	100 ns
NMC27C64Q150	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		150 ns	13
M27C512-12F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	120 ns
EPC2LC20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	8.9662 mm		3.3
NMC27C64QE200	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		200 ns	13
AM27C512-200JI	Rochester Electronics	UVPROM																																								NOT SPECIFIED	NOT SPECIFIED
M27C1001-45XF1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.885 mm	45 ns
NTE2732A	Nte Electronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-XDIP-T24		5.25 V			Not Qualified	32768 bit	4.75 V		e0					200 ns	21
M27C256B-12F1L	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp		120 ns	12.75
NMC27C64Q250	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		250 ns	13
AM27C512-255DC	Rochester Electronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				70 Cel		64KX8	64K	0 Cel		DUAL	R-CDIP-T28		5.25 V				524288 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED			250 ns
2708	Intel	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS	-5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				70 Cel		1KX8	1K	0 Cel		DUAL	R-PDIP-T24		5.25 V			Not Qualified	8192 bit	4.75 V	IT ALSO REQUIRES 12V VDD SUPPLY						450 ns
M27C512-70XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0	NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	70 ns
M2732A-2F1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V	21V PROGRAMMING VOLTAGE	e0				31.75 mm	200 ns	21
M27C1001-45F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	41.885 mm	45 ns
NMC27C16BQ200	National Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T24		5.5 V	5.969 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	TTL COMPATIBLE INPUT & OUTPUT LEVELS	e0			.0001 Amp		200 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.