PIN Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
CLA4603-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	LIMITER	-55 Cel	TIN	S-PDSO-N2	2 ohm	1	CATHODE		2 W			.01 us		20 V	e3		260	SILICON
BAP64-06,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON ANODE, 2 ELEMENTS	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us	TO-236AB	175 V	e3	30	260	SILICON	100 MHz
BAR6302VH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	TIN	R-PDSO-F2	2 ohm	1			.25 W			.075 us		50 V	e3			SILICON		AEC-Q101
DC2118B	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm			Not Qualified	.25 W			.05 us		100 V				SILICON
HSMP-3822-TR1	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA				POSITIVE-INTRINSIC-NEGATIVE		20 V	SMALL OUTLINE	PIN Diodes	150 Cel			TIN LEAD	R-PDSO-G3	1.5 ohm			Not Qualified		.6 pF		.07 us		50 V	e0			SILICON	100 MHz
NTE555	Nte Electronics	PIN DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	IN-LINE		125 Cel	SWITCHING	-55 Cel		R-PDIP-T2					.4 W	.48 pF		.0001 us		50 V				SILICON
DC2552A	Gec Plessey Semiconductors	PIN DIODE	UPPER	NO LEAD	1	YES	ROUND	UNSPECIFIED	25 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.12 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP	PIN Diodes	150 Cel	SWITCHING	-55 Cel		O-XUUC-N1	2 ohm			Not Qualified	.25 W			30 us		25 V				SILICON
HSMP-3822	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-G3	.6 ohm						LOW DISTORTION	.07 us		50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR6503WE6327HTSA1	Infineon Technologies	PIN DIODE																			TIN			1									e3
BAR6405E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel	TIN	R-PDSO-G3	1.35 ohm	1			.25 W			1.55 us		150 V	e3			SILICON		AEC-Q101
HSMP-3822-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	2	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		NICKEL PALLADIUM GOLD	R-PDSO-G3	.6 ohm	1		Not Qualified	.25 W	.6 pF	LOW DISTORTION	.07 us		50 V	e4	20	260	SILICON	100 MHz
HSMP-3822-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	2	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		NICKEL PALLADIUM GOLD	R-PDSO-G3	.6 ohm	1		Not Qualified	.25 W	.6 pF	LOW DISTORTION	.07 us		50 V	e4	20	260	SILICON	100 MHz
SMP1330-005LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY TO S BAND	1 pF	POSITIVE-INTRINSIC-NEGATIVE	2	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	LIMITER		Matte Tin (Sn)	R-PDSO-G3	1.5 ohm	1		Not Qualified	.25 W	.7 pF	LOW DISTORTION	.004 us		20 V	e3	40	260	SILICON	100 MHz
BAR9002ELSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	3 mA	SINGLE	C BAND		POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER		125 Cel	SWITCHING	-55 Cel	GOLD	R-PBCC-N2	2.3 ohm	1			.15 W	.35 pF	HIGH VOLTAGE	.75 us		80 V	e4			SILICON	100 MHz
BAP50-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.6 pF	POSITIVE-INTRINSIC-NEGATIVE	2	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm	1		Not Qualified		.45 pF		1.05 us		50 V	e3	30	260	SILICON	100 MHz
BAR6404WH6327XTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1									e3			SILICON
BAR6404E6327HTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1									e3			SILICON
BA595E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	1.5 mA	SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G2	7 ohm	1		Not Qualified		.26 pF		1.6 us		50 V	e3		260	SILICON	100 MHz
BAR66E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.6 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE						R-PDSO-G3		1		Not Qualified	.25 W			.7 us		150 V			260	SILICON
BAR6304E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us		50 V	e3			SILICON
HSMP-3822-BLK	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA				POSITIVE-INTRINSIC-NEGATIVE		20 V	SMALL OUTLINE	PIN Diodes	150 Cel			TIN LEAD	R-PDSO-G3	1.5 ohm			Not Qualified		.6 pF		.07 us		50 V	e0			SILICON	100 MHz
MA4P504-1072T	M/a-com Technology Solutions	PIN DIODE	UPPER	NO LEAD	2	YES	SQUARE	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	S BAND	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP	PIN Diodes	175 Cel	SWITCHING		TIN OVER NICKEL	S-CUUC-N2	.6 ohm		CATHODE	Not Qualified	10 W		HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT	1 us		500 V	e3		260	SILICON	100 MHz
DC2110A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	20 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	2 ohm			Not Qualified	.25 W			.005 us		50 V				SILICON
BAR8802VH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W			.5 us		80 V	e3			SILICON
HSMP-3822-TR2G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	2	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		NICKEL PALLADIUM GOLD	R-PDSO-G3	.6 ohm	1		Not Qualified	.25 W	.6 pF	LOW DISTORTION	.07 us		50 V	e4	20	260	SILICON	100 MHz
BAR6403WE6327HTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1									e3			SILICON
BAP64-05,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	40 ohm	1		Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
SMP1307-004LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY TO L BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR		Matte Tin (Sn)	R-PDSO-G3	3 ohm	1		Not Qualified	.25 W		LOW DISTORTION	1.5 us		200 V	e3	40	260	SILICON	100 MHz
HSMP-3820-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		NICKEL PALLADIUM GOLD	R-PDSO-G3	.6 ohm	1		Not Qualified	.25 W	.6 pF	LOW DISTORTION	.07 us		50 V	e4	20	260	SILICON	100 MHz
HSMP-389C-TR1	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		TIN LEAD	R-PDSO-G3	2.5 ohm			Not Qualified		.2 pF		.2 us		100 V	e0			SILICON	100 MHz
BAP64-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.35 ohm	1		Not Qualified	.715 W	.48 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BAR6402VH6327XTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1									e3			SILICON
MA4P606-131	TE Connectivity	PIN DIODE				YES			100 mA						100 V		PIN Diodes	175 Cel					.7 ohm					.6 pF		3 us		1000 V
SMP1321-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE	HIGH FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING	-40 Cel		S-PDSO-N2	2 ohm	1	CATHODE		1.4 W	.27 pF	LOW DISTORTION	.4 us					260	SILICON	100 MHz
UM7512DR	Microchip Technology	PIN DIODE	RADIAL	FLAT	2	NO	ROUND	UNSPECIFIED		SINGLE		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		POST/STUD MOUNT			ATTENUATOR; SWITCHING		TIN LEAD	O-XRPM-F2	1 ohm			Not Qualified	7.5 W		LOW DISTORTION, METALLURGICALLY BONDED	3.5 us			e0			SILICON
BAP50-05,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS		.6 pF	POSITIVE-INTRINSIC-NEGATIVE	2	1 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-G3	40 ohm	1		Not Qualified	.25 W	.6 pF				50 V	e3	30	260	SILICON	100 MHz
HSMP-4820-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	L BAND	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	LIMITER; SWITCHING		NICKEL PALLADIUM GOLD	R-PDSO-G3	.6 ohm	1		Not Qualified	.25 W	.75 pF	LOW DISTORTION			50 V	e4	20	260	SILICON
BAR6305E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us		50 V	e3			SILICON		AEC-Q101
MA4P4301F-1091T	TE Connectivity	PIN DIODE				YES			100 mA						100 V		PIN Diodes	175 Cel					1 ohm					2 pF		8 us		100 V					100 MHz
MA4P7446F-1091T	TE Connectivity	PIN DIODE				YES			100 mA						100 V		PIN Diodes	125 Cel					.5 ohm					2.2 pF		19 us		600 V					100 MHz
GC4225-150B/TR	Microchip Technology	PIN DIODE							20 mA	SINGLE	ULTRA HIGH FREQUENCY TO KU BAND	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V			150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel			.6 ohm						HIGH RELIABILITY	.5 us		250 V				SILICON	1000 MHz	MIL-19500
BAP65-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	.9 ohm	1		Not Qualified	.5 W	.65 pF		.17 us		30 V	e3	30	260	SILICON	100 MHz
HSMP-3814-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMMON CATHODE, 2 ELEMENTS		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR		NICKEL PALLADIUM GOLD	R-PDSO-G3	3 ohm	1		Not Qualified		.27 pF	LOW DISTORTION	1.5 us		100 V	e4	20	260	SILICON	100 MHz
BAT1804E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1						.12 us		35 V	e3			SILICON
GC4225-150B	Microchip Technology	PIN DIODE							20 mA	SINGLE	ULTRA HIGH FREQUENCY TO KU BAND	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V			150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel			.6 ohm						HIGH RELIABILITY	.5 us		250 V				SILICON	1000 MHz	MIL-19500
BAR6302VH6327XT	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING		MATTE TIN	R-PDSO-F2	2 ohm				.25 W			.075 us		50 V	e3			SILICON		AEC-Q101
BAR9002ELE6327XTMA1	Infineon Technologies																				GOLD			1									e4
SMP1302-003LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	COMMON ANODE, 2 ELEMENTS	HIGH FREQUENCY TO L BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		Matte Tin (Sn)	R-PDSO-G3	1.5 ohm	1		Not Qualified	.25 W		LOW DISTORTION	.7 us		200 V	e3	40	260	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.