RF Small Signal Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
3003	Microsemi	NPN	SINGLE	YES			.6 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT				200 Cel		SILICON			TIN LEAD	DUAL	R-CDFM-F2			Not Qualified	HIGH RELIABILITY		e0
3001	Microsemi	NPN	SINGLE	YES			.2 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	S BAND	2	FLANGE MOUNT				200 Cel		SILICON			TIN LEAD	DUAL	R-CDFM-F2			Not Qualified	HIGH RELIABILITY		e0
BFR106E6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	5000 MHz	.7 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1		3	SMALL OUTLINE	Other Transistors		70	150 Cel	1.5 pF	SILICON	15 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BFR93AE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1		3	SMALL OUTLINE	Other Transistors		70	150 Cel	.9 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BFR92PE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	5000 MHz	.28 W	.03 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors		70	150 Cel	.6 pF	SILICON	15 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
BFT92,215	NXP Semiconductors	PNP	SINGLE	YES	5000 MHz	.3 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors	.3 W	20	150 Cel		SILICON	15 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260	CECC
BFR93AWH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	6000 MHz		.09 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE					.8 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G3	1					e3			AEC-Q101
BFT92W,115	NXP Semiconductors	PNP	SINGLE	YES	4000 MHz	.3 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors	.3 W	20	150 Cel		SILICON	15 V		Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
BFT92WT/R	NXP Semiconductors	PNP	SINGLE	YES	4000 MHz	.3 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors	.3 W	20	150 Cel		SILICON	15 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
MMBTH81	Onsemi	PNP	SINGLE	YES	600 MHz	.35 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		60	150 Cel	.85 pF	SILICON	20 V		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AA	e3	30	260
BFT92W	NXP Semiconductors	PNP	SINGLE	YES	4000 MHz	.3 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors	.3 W	20	150 Cel		SILICON	15 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
BFT92E6327	Infineon Technologies	PNP	SINGLE	YES	5000 MHz	.2 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors		15	150 Cel	.8 pF	SILICON	15 V	-65 Cel		DUAL	R-PDSO-G3	1		Not Qualified					260
BFS17WH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	2500 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					.8 pF	SILICON	15 V		MATTE TIN	DUAL	R-PDSO-G3	1					e3
BFP650FH6327XTSA1	Infineon Technologies																									TIN			1					e3
BFT92	NXP Semiconductors	PNP	SINGLE	YES	5000 MHz	.3 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors	.3 W	20	175 Cel		SILICON	15 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260	CECC
BFU530AR	NXP Semiconductors	NPN	SINGLE	YES	11000 MHz		.04 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE						SILICON	12 V		TIN	DUAL	R-PDSO-G3	1			LOW NOISE	TO-236AB	e3	30	260	AEC-Q101; IEC-60134
BFU590GX	NXP Semiconductors	NPN	SINGLE	YES	8500 MHz	2 W	.2 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE			60	150 Cel	1.9 pF	SILICON	12 V	-40 Cel		DUAL	R-PDSO-G4	1	COLLECTOR						260	AEC-Q101; IEC-60134
BFR93AW,115	NXP Semiconductors	NPN	SINGLE	YES	5000 MHz	.3 W	.035 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors	.3 W	40	150 Cel		SILICON	12 V		TIN	DUAL	R-PDSO-G3			Not Qualified	HIGH RELIABILITY		e3	30	260
BFT92T/R	NXP Semiconductors	PNP	SINGLE	YES	5000 MHz	.3 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors	.3 W	20	150 Cel		SILICON	15 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260	CECC
BFR93AW-E6327	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors		50	150 Cel	.9 pF	SILICON	12 V		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3		260
BFP450H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	42000 MHz		.15 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE					.4 pF	SILICON GERMANIUM CARBON	4 V		TIN	DUAL	R-PDSO-G4	1			LOW NOISE		e3			AEC-Q101
BFR93A,215	NXP Semiconductors	NPN	SINGLE	YES	6000 MHz	.35 W	.035 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors	.3 W	40	175 Cel		SILICON	12 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260	CECC
MMBTH10LT1G	Onsemi	NPN	SINGLE	YES	650 MHz	.3 W	.025 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		60	150 Cel	.7 pF	SILICON	25 V		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
BFR520	NXP Semiconductors	NPN	SINGLE	YES	9000 MHz	.3 W	.07 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors	.3 W	60	175 Cel		SILICON			Tin (Sn)	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE, HIGH RELIABILITY		e3	30	260	CECC
BFS17PE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	2500 MHz	.28 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		40	150 Cel	.8 pF	SILICON	15 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3
NSVMMBTH81LT3G	Onsemi	PNP	SINGLE	YES	600 MHz	.225 W	.05 A	PLASTIC/EPOXY	AMPLIFIER	.5 V		GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE		.225 W	60	150 Cel	.85 pF	SILICON	20 V	-55 Cel	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	AEC-Q101
BFP650H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	42000 MHz		.15 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE					.4 pF	SILICON GERMANIUM CARBON	4 V		TIN	DUAL	R-PDSO-G4	1			LOW NOISE		e3			AEC-Q101
BFR181WH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	8000 MHz		.02 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE					.45 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G3	1					e3			AEC-Q101
BFP740FESDH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	47000 MHz	.16 W	.045 A	PLASTIC/EPOXY	AMPLIFIER		14 dB	FLAT	RECTANGULAR	1	X BAND	4	SMALL OUTLINE			160	150 Cel	.08 pF	SILICON GERMANIUM CARBON	4.2 V	-55 Cel	TIN	DUAL	R-PDSO-F4	1					e3
BFR93AR,215	NXP Semiconductors	NPN	SINGLE	YES	6000 MHz	.3 W	.035 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	C BAND	3	SMALL OUTLINE	Other Transistors		40	175 Cel	.6 pF	SILICON	12 V		MATTE TIN	DUAL	R-PDSO-G3			Not Qualified			e3
NSVMMBTH81LT1G	Onsemi	PNP	SINGLE	YES	600 MHz	.225 W	.05 A	PLASTIC/EPOXY	AMPLIFIER	.5 V		GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE		.225 W	60	150 Cel	.85 pF	SILICON	20 V	-55 Cel		DUAL	R-PDSO-G3					TO-236				AEC-Q101
BFR92AW,115	NXP Semiconductors	NPN	SINGLE	YES	5000 MHz	.3 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors	.3 W	40	150 Cel		SILICON	15 V		TIN	DUAL	R-PDSO-G3			Not Qualified	HIGH RELIABILITY		e3	30	260
HFA3046BZ	Renesas Electronics	NPN	COMPLEX	YES	8000 MHz			PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	5	ULTRA HIGH FREQUENCY BAND	14	SMALL OUTLINE						SILICON	8 V		MATTE TIN	DUAL	R-PDSO-G14	3			LOW NOISE	MS-012AB	e3	30	260
BFP740ESDH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	45000 MHz	.16 W	.045 A	PLASTIC/EPOXY	AMPLIFIER		14.5 dB	GULL WING	RECTANGULAR	1	C BAND	4	SMALL OUTLINE			160	150 Cel	.8 pF	SILICON GERMANIUM CARBON	4.2 V	-55 Cel	TIN	DUAL	R-PDSO-G4	1					e3
BFR193WH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	8000 MHz		.08 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE					1 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G3	1			LOW NOISE		e3			AEC-Q101
MMBTH81_NL	Fairchild Semiconductor	PNP	SINGLE	YES	600 MHz	.35 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		60	150 Cel	.85 pF	SILICON	20 V		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AA	e3	40	260
MMBTH81LT1	Onsemi	PNP	SINGLE	YES	600 MHz			PLASTIC/EPOXY				GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					.85 pF	SILICON	20 V			DUAL	R-PDSO-G3			Not Qualified		TO-236AB
BFR93A,235	NXP Semiconductors	NPN	SINGLE	YES	6000 MHz	.35 W	.035 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors		40	175 Cel		SILICON	12 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified	LOW NOISE	TO-236AB	e3	30	260
BFU550AR	NXP Semiconductors	NPN	SINGLE	YES	11000 MHz	.45 W	.08 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE			60	150 Cel	.74 pF	SILICON	16 V	-40 Cel	TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101; IEC-60134
MMBTH81D87Z	National Semiconductor	PNP	SINGLE	YES	600 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE					.85 pF	SILICON	20 V			DUAL	R-PDSO-G3			Not Qualified		TO-236AB
BFP540FESDH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	30000 MHz		.08 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	RECTANGULAR	1	S BAND	4	SMALL OUTLINE					.26 pF	SILICON	4.5 V		TIN	DUAL	R-PDSO-F4	1			LOW NOISE		e3			AEC-Q101
BFS481H6327XTSA1	Infineon Technologies	NPN	SEPARATE, 2 ELEMENTS	YES	8000 MHz		.02 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	2	L BAND	6	SMALL OUTLINE					.4 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G6	1					e3			AEC-Q101
BFU760F,115	NXP Semiconductors	NPN		YES		.22 W	.07 A							1				BIP RF Small Signal		155			SILICON GERMANIUM			TIN			1					e3	30	260
BFR740L3RHE6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	42000 MHz		.03 A	UNSPECIFIED	AMPLIFIER			NO LEAD	RECTANGULAR	1	X BAND	3	CHIP CARRIER					.15 pF	SILICON GERMANIUM	4 V		PALLADIUM GOLD	BOTTOM	R-XBCC-N3	1	EMITTER		HIGH RELIABILITY, LOW NOISE		e4
BFP720H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	45000 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE						SILICON GERMANIUM CARBON	4 V		TIN	DUAL	R-PDSO-G4	1					e3			AEC-Q101
BFR92A,215	NXP Semiconductors	NPN	SINGLE	YES	5000 MHz	.35 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE	Other Transistors	.3 W	40	175 Cel		SILICON	15 V		TIN	DUAL	R-PDSO-G3			Not Qualified	LOW NOISE		e3	30	260	CECC
BFP640ESDH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	45000 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE						SILICON GERMANIUM CARBON	4.1 V		TIN	DUAL	R-PDSO-G4	1					e3			AEC-Q101
BFU520AR	NXP Semiconductors	NPN	SINGLE	YES	10000 MHz		.03 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE						SILICON	12 V		TIN	DUAL	R-PDSO-G3	1			LOW NOISE	TO-236AB	e3	30	260	AEC-Q101; IEC-60134

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.