Vishay Intertechnology - J310

  1. Home
  2. Vishay Intertechnology - J310
J310 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number J310
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: SWITCHING; JEDEC-95 Code: TO-226AA; Qualification: Not Qualified;
Datasheet J310 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 2.5 pF
JEDEC-95 Code: TO-226AA
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: DEPLETION MODE
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BLF8G27LS-150V by NXP Semiconductors

BLF8G27LS-150V

NXP Semiconductors

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): NOT SPECIFIED;
BF245ARL by Onsemi

BF245ARL

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: TIN LEAD; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;
BF998 by NXP Semiconductors

BF998

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
ATF-541M4-BLK by Broadcom

ATF-541M4-BLK

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PBCC-N4; Terminal Form: NO LEAD; Additional Features: LOW NOISE;
BF2030 by Infineon Technologies

BF2030

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Case Connection: SOURCE;
BLF188XR by NXP Semiconductors

BLF188XR

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
BF245ZL1 by Onsemi

BF245ZL1

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; No. of Elements: 1; Terminal Position: BOTTOM;
2SK1242 by Onsemi

2SK1242

Onsemi

N-CHANNEL; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A;
ATF-36077-STR by Broadcom

ATF-36077-STR

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel;
934055961135 by NXP Semiconductors

934055961135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 10 V; Terminal Position: DUAL; JESD-609 Code: e3;
FHX35X by Sumitomo Electric Industries

FHX35X

Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Body Material: UNSPECIFIED;
2N4221 by Texas Instruments

2N4221

Texas Instruments

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; JEDEC-95 Code: TO-72;
934031480135 by NXP Semiconductors

934031480135

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
SGF18 by Onsemi

SGF18

Onsemi

N-CHANNEL; Maximum Drain Current (Abs) (ID): .06 A; Maximum Power Dissipation Ambient: .13 W; Maximum Drain Current (ID): .06 A;
BF1204 by NXP Semiconductors

BF1204

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 2; Maximum Drain Current (ID): .03 A;
BF410C by NXP Semiconductors

BF410C

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; JEDEC-95 Code: TO-92;
934028860215 by NXP Semiconductors

934028860215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Terminal Finish: TIN;
BF410A by NXP Semiconductors

BF410A

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Transistor Application: AMPLIFIER;
ATF-36077-STR by Hewlett Packard

ATF-36077-STR

Hewlett Packard

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Terminal Form: FLAT; Qualification: Not Qualified;
2N4416 by Inter F E T

2N4416

Inter F E T

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; JESD-30 Code: O-MBCY-W4;