RF/Microwave Mixers

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum Conversion Loss Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

LTC5541IUH#PBF

Analog Devices

DOUBLE BALANCED

15 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

1300 MHz

2300 MHz

LTC5541IUH#TRPBF

Analog Devices

DOUBLE BALANCED

15 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

1300 MHz

2300 MHz

AD8342ACPZ-REEL7

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

16

PLASTIC/EPOXY

BIPOLAR

12 dBm

113 mA

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

e3

50 MHz

2400 MHz

LTC5549IUDB#TRMPBF

Analog Devices

DOUBLE BALANCED

20 dBm

COMPONENT

50 ohm

105 Cel

-40 Cel

MATTE TIN

CMOS COMPATIBLE

e3

2000 MHz

14000 MHz

CMY210

Infineon Technologies

DOUBLE BALANCED

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

17 dBm

COMPONENT

3

TSOP5/6,.11,37

50 ohm

RF/Microwave Mixers

7 dB

500 MHz

2500 MHz

AD8343ARUZ-REEL7

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

14

PLASTIC/EPOXY

BIPOLAR

2

75 mA

COMPONENT

5

TSSOP14,.25

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

e3

0 MHz

2500 MHz

MAMX-011023-TR3000

M/a-com Technology Solutions

SA602AD/01-T

NXP Semiconductors

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

2.8 mA

6

SOP8,.25

RF/Microwave Mixers

85 Cel

-40 Cel

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

e4

HMC560ALM3TR

Analog Devices

DOUBLE BALANCED

25 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

15 dB

22000 MHz

38000 MHz

LTC5510IUF#PBF

Analog Devices

DOUBLE BALANCED

15 dBm

COMPONENT

50 ohm

105 Cel

-40 Cel

MATTE TIN

e3

1 MHz

6000 MHz

CMY210E6327

Infineon Technologies

DOUBLE BALANCED

10 dBm

COMPONENT

50 ohm

500 MHz

2500 MHz

HMC8191LC4

Analog Devices

IMAGE REJECTION

24 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

11.5 dB

e4

6000 MHz

26500 MHz

HMC560ALM3

Analog Devices

DOUBLE BALANCED

25 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

15 dB

22000 MHz

38000 MHz

HMC558ALC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

25 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

9.5 dB

5500 MHz

14000 MHz

RMS-30

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

2.16

COMPONENT

DILCC6,.25

RF/Microwave Mixers

85 Cel

-40 Cel

TIN LEAD

9.8 dB

e0

200 MHz

3000 MHz

RMS-30+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

2.16

COMPONENT

DILCC6,.25

RF/Microwave Mixers

85 Cel

-40 Cel

GOLD OVER NICKEL

9.8 dB

e4

200 MHz

3000 MHz

DB0226HA1

L-3 Narda-miteq

DOUBLE BALANCED

1.5

85 Cel

-54 Cel

10 dB

HIGH RELIABILITY, HIGH DYNAMIC RANGE

2000 MHz

26000 MHz

HMC8191LC4TR-R5

Analog Devices

IMAGE REJECTION

24 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

11.5 dB

e4

6000 MHz

26500 MHz

HMC787ALC3BTR

Analog Devices

TRIPLE BALANCED

28 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

GOLD OVER NICKEL

11 dB

e4

3000 MHz

10000 MHz

HMC8191LC4TR

Analog Devices

IMAGE REJECTION

24 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Gold/Nickel (Au/Ni)

11.5 dB

e4

6000 MHz

26500 MHz

LTC5549IUDB#PBF

Analog Devices

DOUBLE BALANCED

20 dBm

COMPONENT

50 ohm

105 Cel

-40 Cel

Matte Tin (Sn) - annealed

CMOS COMPATIBLE

e3

2000 MHz

14000 MHz

HMC207AS8ETR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

SOP8,.25

RF/Microwave Mixers

85 Cel

-40 Cel

HMC520ALC4

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

HMC213BMS8ETR

Analog Devices

DOUBLE BALANCED

13 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

MATTE TIN

11 dB

e3

1500 MHz

4500 MHz

LTC5549IUDB#TRPBF

Analog Devices

DOUBLE BALANCED

20 dBm

COMPONENT

50 ohm

105 Cel

-40 Cel

MATTE TIN

CMOS COMPATIBLE

e3

2000 MHz

14000 MHz

JMS-2LH

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

2.67

COMPONENT

SMDIP6,.3

RF/Microwave Mixers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

9 dB

e0

20 MHz

1000 MHz

JMS-2LH+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

2.67

COMPONENT

SMDIP6,.3

RF/Microwave Mixers

85 Cel

-40 Cel

Tin (Sn) - with Nickel (Ni) barrier

9 dB

e3

20 MHz

1000 MHz

HMC520ALC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

HMC787ALC3BTR-R5

Analog Devices

TRIPLE BALANCED

28 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

GOLD OVER NICKEL

11 dB

e4

3000 MHz

10000 MHz

HMC521ALC4TR

Analog Devices

IMAGE REJECTION

20 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

9.5 dB

8500 MHz

13500 MHz

HMC521ALC4TR-R5

Analog Devices

IMAGE REJECTION

20 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

9.5 dB

8500 MHz

13500 MHz

HMC525LC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-55 Cel

Gold (Au) - with Nickel (Ni) barrier

11 dB

e4

4000 MHz

8500 MHz

HMC787ALC3B

Analog Devices

TRIPLE BALANCED

GAAS

28 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

TUNGSTEN NICKEL GOLD

11 dB

3000 MHz

10000 MHz

LRMS-30J+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

6.26

COMPONENT

SMDIP6,.4

RF/Microwave Mixers

85 Cel

-40 Cel

Tin (Sn) - with Nickel (Ni) barrier

9.8 dB

e3

200 MHz

3000 MHz

LRMS-30J

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

6.26

COMPONENT

SMDIP6,.4

RF/Microwave Mixers

85 Cel

-40 Cel

TIN LEAD

9.8 dB

e0

200 MHz

3000 MHz

HMC292ALC3B

Analog Devices

DOUBLE BALANCED

18 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

12.5 dB

14000 MHz

30000 MHz

HMC521ALC4

Analog Devices

IMAGE REJECTION

20 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

GOLD OVER NICKEL

9.5 dB

e4

8500 MHz

13500 MHz

HMC521LC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-55 Cel

LTC5552IUDB#TRMPBF

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

PLASTIC/EPOXY

20 dBm

150 mA

COMPONENT

3.3

LCC12,.08X.12,20

50 ohm

105 Cel

-40 Cel

MATTE TIN

e3

3000 MHz

20000 MHz

LTC5553IUDB#TRMPBF

Analog Devices

DOUBLE BALANCED

20 dBm

COMPONENT

50 ohm

105 Cel

-40 Cel

MATTE TIN

e3

3000 MHz

20000 MHz

HMC220AMS8ETR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSOP8,.19

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

10.5 dB

e3

5000 MHz

12000 MHz

HMC219BMS8GETR

Analog Devices

DOUBLE BALANCED

25 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

MATTE TIN

11 dB

e3

2500 MHz

7000 MHz

HMC557ALC4

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

HMC774ALC3BTR

Analog Devices

DOUBLE BALANCED

21 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

15.5 dB

7000 MHz

34000 MHz

HMC774ALC3BTR-R5

Analog Devices

DOUBLE BALANCED

21 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

15.5 dB

7000 MHz

34000 MHz

IAM-82008

Agilent Technologies

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

65 mA

10

SOP8,.25

RF/Microwave Mixers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

HMC774ALC3B

Analog Devices

DOUBLE BALANCED

21 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

15.5 dB

7000 MHz

34000 MHz

LRMS-1MH

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

23 dBm

1.96

COMPONENT

GWDIP6,.4

RF/Microwave Mixers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

8 dB

e0

2 MHz

500 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.