Tt Electronics Plc - D2089UK

N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .06 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Case Connection: SHIELD; Maximum Feedback Capacitance (Crss): 2 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Additional Features: LOW NOISE; Field Effect Transistor Technology: JUNCTION;

MMBFJ309LT1G by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max power dissipation of 0.225W and can withstand temperatures up to 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: SOURCE; JESD-30 Code: R-CDFM-F2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; JESD-30 Code: R-XUUC-N; Terminal Position: UPPER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: O-PBCY-T3; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 20 V; Package Body Material: PLASTIC/EPOXY;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Element Material: SILICON; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Terminal Form: WIRE; Qualification: Not Qualified;

Broadcom ATF-38143-BLKG is a N-CHANNEL FET for X BAND applications. Features 15 dB Gp, 4.5 V DS Breakdown Voltage, and 0.58 W Power Dissipation. Ideal for RF AMPLIFIER circuits with DEPLETION MODE operation in SMALL OUTLINE package.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: JUNCTION; No. of Terminals: 3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .03 pF; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Maximum Drain Current (Abs) (ID): .04 A;

RF Small Signal Field-Effect Transistors;

RF Small Signal Field-Effect Transistors; Surface Mount: YES; JESD-30 Code: R-XUUC-N4; Operating Mode: DEPLETION MODE; Package Style (Meter): UNCASED CHIP; Minimum DS Breakdown Voltage: 6 V;