Central Semiconductor - 2N3819PBFREE

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Transistor Element Material: SILICON; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Terminal Position: BOTTOM; JEDEC-95 Code: TO-226AA;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; JESD-609 Code: e0;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: SWITCHING; JEDEC-95 Code: TO-226AA; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 20 dB; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .03 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): MICROWAVE; Operating Mode: DEPLETION MODE; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JEDEC-95 Code: TO-236AB; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .04 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Terminal Form: WIRE; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): CYLINDRICAL; JEDEC-95 Code: TO-72;