MRAMs

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR4A16BCYS35R	Everspin Technologies	MRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	1048576 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	20	.8 mm	85 Cel	1MX16	1M	3 V	-40 Cel	TIN	DUAL	R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V	e3		260	.009 Amp	22.22 mm	35 ns
MR25H40MDFR	Everspin Technologies	MRAM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD		SYNCHRONOUS		524288 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	125 Cel	512KX8	512K		-40 Cel		DUAL	R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified		4194304 bit	3 V					6 mm
MR25H40MDF	Everspin Technologies	MRAM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD		SYNCHRONOUS		524288 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	125 Cel	512KX8	512K		-40 Cel		DUAL	R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified		4194304 bit	3 V		40	260		6 mm
MR2A16ACYS35R	Freescale Semiconductor	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	20	.8 mm	85 Cel	256KX16	256K	3 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V	e3	40	260	.012 Amp	18.41 mm	35 ns
MR25H40CDF	Everspin Technologies	MRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		524288 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel	512KX8	512K		-40 Cel		DUAL	R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified		4194304 bit	3 V			260		6 mm
MR25H40CDFR	Everspin Technologies	MRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		524288 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel	512KX8	512K		-40 Cel		DUAL	R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified		4194304 bit	3 V			260		6 mm
MR4A16BCMA35R	Everspin Technologies	MRAM	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	180 mA	1048576 words	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	20	.75 mm	85 Cel	1MX16	1M	3 V	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		10 mm	Not Qualified	.000035 ms	16777216 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.009 Amp	10 mm	35 ns
MR5A16ACMA35R	Everspin Technologies	MRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		20	.75 mm	85 Cel	2MX16	2M	3 V	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		10 mm		.000035 ms	33554432 bit	3 V				.018 Amp	10 mm	35 ns
MR5A16ACMA35	Everspin Technologies	MRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		20	.75 mm	85 Cel	2MX16	2M	3 V	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		10 mm		.000035 ms	33554432 bit	3 V				.018 Amp	10 mm	35 ns
MR4A16BCMA35	Everspin Technologies	MRAM	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	180 mA	1048576 words	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	20	.75 mm	85 Cel	1MX16	1M	3 V	-40 Cel		BOTTOM	S-PBGA-B48	5	3.6 V	1.35 mm		10 mm	Not Qualified	.000035 ms	16777216 bit	3 V		40	260	.009 Amp	10 mm	35 ns
MR25H40VDFR	Everspin Technologies	MRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		524288 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	105 Cel	512KX8	512K		-40 Cel		DUAL	R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified		4194304 bit	3 V					6 mm
MR25H40CDCR	Everspin Technologies	MRAM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		524288 words	3.3	3.3	8	SMALL OUTLINE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel	512KX8	512K		-40 Cel		DUAL	R-PDSO-N8		3.6 V	1.05 mm		5 mm	Not Qualified		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		6 mm
MR4A16BCYS35	Everspin Technologies	MRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	1048576 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	20	.8 mm	85 Cel	1MX16	1M	3 V	-40 Cel	TIN	DUAL	R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V	e3		260	.009 Amp	22.22 mm	35 ns
MR25H40CDC	Everspin Technologies	MRAM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		524288 words	3.3	3.3	8	SMALL OUTLINE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel	512KX8	512K		-40 Cel		DUAL	R-PDSO-N8	3	3.6 V	1.05 mm		5 mm	Not Qualified		4194304 bit	3 V					6 mm
MR2A16AYS35R	Freescale Semiconductor	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	20	.8 mm	70 Cel	256KX16	256K	3 V	0 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V	e3	40	260	.012 Amp	18.41 mm	35 ns
MR25H40VDF	Everspin Technologies	MRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		524288 words	3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	105 Cel	512KX8	512K		-40 Cel		DUAL	R-PDSO-N8	3	3.6 V	.9 mm		5 mm	Not Qualified		4194304 bit	3 V					6 mm
M3032316045NX0IBCY	Renesas Electronics	MRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		10	.75 mm	85 Cel	2MX16	2M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	100000000000000 Write/Erase Cycles	10 mm			33554432 bit	2.7 V	e1		260	.007 Amp	10 mm	45 ns
MR4A08BCYS35R	Everspin Technologies	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	20	.8 mm	85 Cel	2MX8	2M	3 V	-40 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V		40	260	.009 Amp	18.41 mm	35 ns
MR5A16AUMA45R	Everspin Technologies	MRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		20	.75 mm	125 Cel	2MX16	2M	3 V	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm		10 mm		.000045 ms	33554432 bit	3 V				.018 Amp	10 mm	45 ns
MR4A08BYS35	Everspin Technologies	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	20	.8 mm	70 Cel	2MX8	2M	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.009 Amp	18.41 mm	35 ns
MR4A08BYS35R	Everspin Technologies	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	20	.8 mm	70 Cel	2MX8	2M	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	16777216 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.009 Amp	18.41 mm	35 ns
MR5A16ACYS35R	Everspin Technologies	MRAM		54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		20	.8 mm	85 Cel	2MX16	2M	3 V	-40 Cel		DUAL	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		.000035 ms	33554432 bit	3 V				.018 Amp	22.22 mm	35 ns
MR0A16ACYS35R	Freescale Semiconductor	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	65536 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	20	.8 mm	85 Cel	64KX16	64K	3 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V	e3	40	260	.012 Amp	18.41 mm	35 ns
MR4A16BUYS45	Everspin Technologies	MRAM	AUTOMOTIVE	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	1048576 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		20	.8 mm	125 Cel	1MX16	1M	3 V	-40 Cel		DUAL	R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		.000045 ms	16777216 bit	3 V				.009 Amp	22.22 mm	45 ns
MR5A16ACYS35	Everspin Technologies	MRAM		54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	2097152 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		20	.8 mm	85 Cel	2MX16	2M	3 V	-40 Cel		DUAL	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		.000035 ms	33554432 bit	3 V				.018 Amp	22.22 mm	35 ns
EM064LXQADG13CS1R	Everspin Technologies	STT MRAM
EM064LXQADG13CS1T	Everspin Technologies	STT MRAM
MR2S16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	155 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX16	256K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1A08ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	85 Cel	256KX8	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0S8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX8	128K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0A16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	64KX16	64K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0A8ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	85 Cel	128KX8	128K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1A8AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX8	256K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0S16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	155 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	64KX16	64K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR4S08ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	165 mA	2097152 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	85 Cel	2MX8	2M	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	16777216 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1S16AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX16	128K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0S08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX8	128K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1S08AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	165 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	105 Cel	256KX8	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR4S08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	155 mA	2097152 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	2MX8	2M	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	16777216 bit	3 V				.012 Amp	18.41 mm	35 ns
MR4S08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	155 mA	2097152 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	2MX8	2M	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	16777216 bit	3 V				.012 Amp	18.41 mm	35 ns
MR2S8ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	165 mA	524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	85 Cel	512KX8	512K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1S16ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	155 mA	131072 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX16	128K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0A08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	128KX8	128K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR1A08AYS35	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	256KX8	256K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	2097152 bit	3 V				.012 Amp	18.41 mm	35 ns
MR2S08ATS35C	NXP Semiconductors	MRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	155 mA	524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	70 Cel	512KX8	512K	3 V	0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns
MR2S16ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	165 mA	262144 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	85 Cel	256KX16	256K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns
MR0S16ACYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	165 mA	65536 words	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	85 Cel	64KX16	64K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.000035 ms	1048576 bit	3 V				.012 Amp	18.41 mm	35 ns
MR2S08AVYS35	NXP Semiconductors	MRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	165 mA	524288 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		20	.8 mm	105 Cel	512KX8	512K	3 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	.035 ms	4194304 bit	3 V				.012 Amp	18.41 mm	35 ns

MRAMs

MRAM, or Magnetoresistive Random-Access Memory, is a type of non-volatile memory technology that uses the magnetic properties of materials to store data. MRAM combines the benefits of both traditional RAM (Random-Access Memory) and non-volatile memory technologies. Here are some key characteristics and features of MRAM:

Non-Volatile: MRAM is non-volatile, meaning it retains data even when the power is turned off. This is in contrast to traditional DRAM, which is volatile and loses data when powered down.

High Speed: MRAM offers fast read and write speeds, similar to traditional SRAM (Static Random-Access Memory). This makes it suitable for applications that require high-speed data access.

Endurance: MRAM has a high endurance, which means it can withstand a large number of write cycles without degradation. This durability is important for applications that involve frequent data updates.

Low Power Consumption: MRAM typically consumes less power compared to some other non-volatile memory technologies like Flash memory. This makes it energy-efficient and suitable for battery-powered devices.

Bit-Addressable: MRAM is bit-addressable, allowing for precise read and write operations at the individual bit level. This granularity is useful in applications where fine data control is required.

Durability: MRAM is known for its robustness and resistance to environmental factors such as radiation and extreme temperatures. This makes it suitable for applications in harsh environments, including aerospace and automotive industries.

Scalability: MRAM technology has been evolving, and efforts are ongoing to increase storage capacity while maintaining its favorable characteristics.

MRAM is used in embedded systems, IoT devices, data storage, and more, where its combination of non-volatility, speed, and endurance makes it beneficial.