Onsemi Small Signal Bipolar Junction Transistors (BJT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
MMBT3904LT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	250 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MMBT2222ALT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		75	150 Cel		SILICON	40 V	35 ns	-55 Cel	285 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
MMBT2907ALT1G	Onsemi	PNP	SINGLE	YES	200 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V	45 ns	-55 Cel	100 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MMBT3906LT1G	Onsemi	PNP	SINGLE	YES	250 MHz	.3 W	.2 A	PLASTIC/EPOXY		.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel	4.5 pF	SILICON	40 V	70 ns	-65 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
SMMBT3904LT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
SMMBT2222ALT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.3 W	.6 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		75	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	AEC-Q101
SMMBT2907ALT1G	Onsemi	PNP	SINGLE	YES	200 MHz	.3 W	.6 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
MMBTA42LT1G	Onsemi	NPN	SINGLE	YES	50 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	300 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MMBT3904	Onsemi	NPN	SINGLE	YES	300 MHz	.225 W	.2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	250 ns	TIN	DUAL	R-PDSO-G3	1	COLLECTOR	Not Qualified		TO-236AB	e3	30	260
2N6517BU	Onsemi	NPN	SINGLE	NO	40 MHz	.625 W	.5 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		15	150 Cel		SILICON	350 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC817-40LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel		SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
NSM4002MR6T1G	Onsemi	NPN		YES	100 MHz	.0005 W	.5 A									Other Transistors		100	150 Cel							MATTE TIN			1					e3	30	260
SMMBT3906LT1G	Onsemi	PNP	SINGLE	YES	250 MHz	.3 W	.2 A	PLASTIC/EPOXY		.4 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel	4.5 pF	SILICON	40 V	70 ns	-65 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
MMBT3904TT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BC846BLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	4.5 pF	SILICON	65 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
PN2222ABU	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
SBC817-40LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		250	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
BC547CG	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		420	150 Cel		SILICON	45 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
MMBT3904WT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	250 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
SMMBT4401LT1G	Onsemi	NPN	SINGLE	YES	250 MHz	.3 W	.6 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	255 ns		35 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	AEC-Q101
MMBT4401LT1G	Onsemi	NPN	SINGLE	YES	250 MHz	.3 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	.225 W	40	150 Cel	6.5 pF	SILICON	40 V	255 ns	-55 Cel	35 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MMBT5551LT1G	Onsemi	NPN	SINGLE	YES		.3 W	.06 A	PLASTIC/EPOXY	SWITCHING	.2 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			30	150 Cel		SILICON	160 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
MMBT2222AWT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.15 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBTA06LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.225 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
MMUN2211LT1G	Onsemi	NPN	SINGLE WITH BUILT-IN RESISTOR	YES		.4 W	.1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	BIP General Purpose Small Signal		35	150 Cel		SILICON	50 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified	BUILT-IN BIAS RESISTOR RATIO IS 1	TO-236	e3	40	260
MMBT5401LT1G	Onsemi	PNP	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		50	150 Cel		SILICON	150 V		-55 Cel		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
BC547BTA	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT4403LT1G	Onsemi	PNP	SINGLE	YES	200 MHz	.225 W	.6 A	PLASTIC/EPOXY	SWITCHING	.75 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE		.225 W	100	150 Cel	8.5 pF	SILICON	40 V	35 ns	-55 Cel	255 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
SBC817-25LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1				TO-236AB	e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BC817-25LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V		-65 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
SMMBTA06LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	80 V				MATTE TIN	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	AEC-Q101
BC847BLT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.1 A	PLASTIC/EPOXY	SWITCHING	.6 V	GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		200	150 Cel	4.5 pF	SILICON	45 V		-55 Cel		Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	NOT SPECIFIED	NOT SPECIFIED
MMBT2222A	Onsemi	NPN	SINGLE	YES	300 MHz	.225 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		75	150 Cel		SILICON	40 V	35 ns	-55 Cel	285 ns	TIN	DUAL	R-PDSO-G3	1	COLLECTOR	Not Qualified		TO-236AA	e3	30	260
BCX19LT1G	Onsemi	NPN	SINGLE	YES		.225 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
MMBT2222AM3T5G	Onsemi	NPN	SINGLE	YES	300 MHz	.64 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-F3	1		Not Qualified			e3	30	260
2N3904BU	Onsemi	NPN	SINGLE	NO	300 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC547BTF	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
BC817-25LT3G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		160	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
BC547BBU	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.1 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		200	150 Cel		SILICON	45 V				TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MMBT3906TT1G	Onsemi	PNP	SINGLE	YES	250 MHz	.15 W	.2 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-65 Cel	300 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT2222ATT1G	Onsemi	NPN	SINGLE	YES	300 MHz	.15 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		40	150 Cel		SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBT2222AWT3G	Onsemi	NPN	SINGLE	YES	300 MHz		.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	3	SMALL OUTLINE			40			SILICON	40 V	35 ns		285 ns	MATTE TIN	DUAL	R-PDSO-G3	1					e3	30	260	AEC-Q101
BC817-16LT1G	Onsemi	NPN	SINGLE	YES	100 MHz	.3 W	.5 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	45 V				Matte Tin (Sn) - annealed	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
2N3904TFR	Onsemi	NPN	SINGLE	NO	300 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns	-55 Cel	250 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
MPS5172RLRMG	Onsemi	NPN	SINGLE	NO			.1 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL			100	150 Cel		SILICON	25 V				TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
SMMBT2907ALT3G	Onsemi	PNP	SINGLE	YES	200 MHz	.3 W	.6 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors		100	150 Cel		SILICON	60 V	45 ns		100 ns	MATTE TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101
2N3904TAR	Onsemi	NPN	SINGLE	NO	300 MHz	.35 W	.2 A	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		30	150 Cel		SILICON	40 V	70 ns		250 ns	MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3
KSP13TA	Onsemi	NPN	DARLINGTON	NO	125 MHz		.5 A	PLASTIC/EPOXY			THROUGH-HOLE	ROUND	1	3	CYLINDRICAL	Other Transistors		10000	150 Cel		SILICON					MATTE TIN	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3

Onsemi Small Signal Bipolar Junction Transistors (BJT) 2,400+

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