Insulated Gate Bipolar Transistors (IGBT)

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
STGE200NB60S	STMicroelectronics	N-CHANNEL	SINGLE	NO	600 W	200 A	UNSPECIFIED	POWER CONTROL		1.6 V	UNSPECIFIED	RECTANGULAR	1		4600 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V			NICKEL	UPPER	R-XUFM-X4		ISOLATED	Not Qualified						170 ns
STGD6NC60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56 W	15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		222 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			17.3 ns
FGH40N60SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL	28 ns		THROUGH-HOLE	RECTANGULAR	1	17 ns	132 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	37 ns
IRGP4640DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	65 A	PLASTIC/EPOXY	POWER CONTROL	31 ns	1.9 V	THROUGH-HOLE	RECTANGULAR	1	41 ns	164 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V	84 ns	-55 Cel	20 V	156 ns	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AC		NOT SPECIFIED	NOT SPECIFIED	64 ns
FS820R08A6P2BBPSA1	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	714 W	820 A	UNSPECIFIED	POWER CONTROL		1.35 V	UNSPECIFIED	RECTANGULAR	6		1110 ns	33	FLANGE MOUNT		150 Cel	SILICON	750 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X33		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	380 ns
IRGP50B60PDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	370 W	75 A	PLASTIC/EPOXY	POWER CONTROL	36 ns		THROUGH-HOLE	RECTANGULAR	1	65 ns	190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH RELIABILITY, LOW CONDUCTION LOSS	TO-247AC	e3			59 ns
FGH40T120SMD	Onsemi	N-CHANNEL		NO	555 W	80 A												Insulated Gate BIP Transistors	175 Cel		1200 V			25 V		7.5 V	Matte Tin (Sn) - annealed								e3	NOT SPECIFIED	NOT SPECIFIED
HGTG11N120CND	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		43 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		570 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			33 ns
FGH40N60SMDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL	28 ns		THROUGH-HOLE	RECTANGULAR	1	17 ns	132 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	37 ns
FP100R12KT4B11BOSA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO			UNSPECIFIED				UNSPECIFIED	RECTANGULAR	7		620 ns	35	FLANGE MOUNT			SILICON	1200 V							UPPER	R-XUFM-X35		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	210 ns
FGH40N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	110 ns
IXXX200N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	1630 W	480 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		370 ns	3	IN-LINE		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V	Matte Tin (Sn)	SINGLE	R-PSIP-T3		COLLECTOR				e3			135 ns
IXXX160N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	940 W	310 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		380 ns	3	IN-LINE		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V	Matte Tin (Sn)	SINGLE	R-PSIP-T3		COLLECTOR				e3			93 ns
FGH40T120SMDL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	555 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		542 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T4					TO-247	e3			90 ns
IRG4PC50UDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	55 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1	110 ns	214 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		-55 Cel	20 V	340 ns	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			71 ns
2ED300C17SROHSBPSA1	Infineon Technologies	N-Channel																	85 Cel	SILICON			-25 Cel							1
FGH40T120SMD_F155	Fairchild Semiconductor	N-CHANNEL		NO	555 W	80 A												Insulated Gate BIP Transistors	175 Cel		1200 V			25 V		7.5 V	MATTE TIN								e3
FGH40T120SMD-F155	Onsemi	N-CHANNEL		NO	555 W	80 A												Insulated Gate BIP Transistors	175 Cel		1200 V			25 V		7.5 V										NOT SPECIFIED	NOT SPECIFIED
IKZ75N65ES5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		475 ns	4	FLANGE MOUNT			SILICON	650 V		-40 Cel				TIN	SINGLE	R-PSFM-T4		COLLECTOR			TO-247	e3			70 ns
FS75R12KE3BOSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		105 A	UNSPECIFIED				UNSPECIFIED	RECTANGULAR	6		610 ns	28	FLANGE MOUNT		150 Cel	SILICON	1200 V							UPPER	R-XUFM-X28		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	340 ns
FGH60N60SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL	70 ns		THROUGH-HOLE	RECTANGULAR	1	68 ns	163 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	59 ns
AUIRG4PH50S	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	57 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1	638 ns	2170 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED	62 ns
IRG4BC40WLPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	160 W	40 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	110 ns	294 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSIP-T3	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-262	e3			48 ns
IKW40N120H3FKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		414 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V						TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e3			78 ns
STGB14NC60KDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	25 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		340 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		7 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	ULTRA FAST	TO-263AB	e3	30	245	31.5 ns
2ED300C17STROHSBPSA1	Infineon Technologies	N-Channel																	85 Cel	SILICON			-25 Cel							1
HGTD1N120BNS9A	Onsemi	N-CHANNEL	SINGLE	YES	60 W	5.3 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	2.9 V	GULL WING	RECTANGULAR	1	370 ns	333 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	32 ns	-55 Cel	20 V	458 ns		Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260	24 ns
SKB02N120ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		6.2 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		375 ns	2	SMALL OUTLINE		150 Cel	SILICON	1200 V						TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3			40 ns
FF450R12KT4HOSA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		580 A	UNSPECIFIED				UNSPECIFIED	RECTANGULAR	2		720 ns	7	FLANGE MOUNT			SILICON	1200 V							UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	230 ns
FP20R06W1E3B11BOMA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO		27 A	UNSPECIFIED	POWER CONTROL			UNSPECIFIED	RECTANGULAR	7		250 ns	23	FLANGE MOUNT			SILICON	600 V							UPPER	R-XUFM-X23		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	37 ns	UL APPROVED
IXXX300N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	2300 W	550 A	PLASTIC/EPOXY	POWER CONTROL		1.6 V	THROUGH-HOLE	RECTANGULAR	1		430 ns	3	IN-LINE		175 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSIP-T3		COLLECTOR				e3			137 ns
SKW30N60FKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		41 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		391 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			78 ns
IXDR35N60BD1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		38 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		390 ns	3	IN-LINE		150 Cel	SILICON	600 V						TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH SPEED		e1			75 ns
IXXX110N65B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	250 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		250 ns	3	IN-LINE		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V	Matte Tin (Sn)	SINGLE	R-PSIP-T3		COLLECTOR				e3			65 ns
SKM400GB125D	Semikron International	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		400 A	UNSPECIFIED	POWER CONTROL		3.85 V	UNSPECIFIED	RECTANGULAR	2		532 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V			TIN/SILVER	UPPER	R-XUFM-X7		ISOLATED	Not Qualified			e3/e4	NOT SPECIFIED	NOT SPECIFIED	120 ns	IEC-60747-1; UL RECOGNIZED
FGH40N60SMDF_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	20 ns	123 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6 V	Matte Tin (Sn)	SINGLE	R-PSFM-T3		COLLECTOR		RC-IGBT	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	50 ns	AEC-Q101
FGH40N60SMDF-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	349 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1	20 ns	123 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3				LOW CONDUCTION LOSS	TO-247	e3			50 ns
IXXX160N65C4	Littelfuse	N-CHANNEL		NO	940 W	290 A												Insulated Gate BIP Transistors	175 Cel		650 V			20 V		6.5 V	Matte Tin (Sn)								e3
FGH60N60SMD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	120 A	PLASTIC/EPOXY	POWER CONTROL	60 ns		THROUGH-HOLE	RECTANGULAR	1	20 ns	139 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3			66 ns	AEC-Q101
FGH60N60SMD_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		120 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		139 ns	3	FLANGE MOUNT			SILICON	600 V							SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	66 ns	AEC-Q101
STGD25N40LZAG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	25 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.25 V	GULL WING	RECTANGULAR	1		14500 ns	2	SMALL OUTLINE		175 Cel	SILICON	435 V		-55 Cel	16 V		2.1 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	4560 ns	AEC-Q101
HGTG30N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		238 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			35 ns
HGT1S10N120BNST	Onsemi	N-CHANNEL	SINGLE	YES	298 W	35 A	PLASTIC/EPOXY	MOTOR CONTROL	15 ns	4.2 V	GULL WING	RECTANGULAR	1	200 ns	330 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	40 ns	-55 Cel	20 V	450 ns		MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	32 ns
AFGHL50T65SQDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		160.8 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	32 ns	AEC-Q101
IXYN100N120C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	690 W	134 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	1		265 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		5 V		UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					122 ns	UL RECOGNIZED
IXXX300N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	2300 W	510 A	PLASTIC/EPOXY	POWER CONTROL		2 V	THROUGH-HOLE	RECTANGULAR	1		278 ns	3	IN-LINE		175 Cel	SILICON	600 V		-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSIP-T3		COLLECTOR				e3			128 ns
IRG4PC50FPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	200 W	70 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1	190 ns	620 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			52 ns
IKW25N120T2FKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		504 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V						TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			49 ns