Onsemi - MMBF5484LT1

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Minimum DS Breakdown Voltage: 20 V; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A; Maximum Power Dissipation Ambient: .13 W;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Maximum Drain Current (ID): .1 A;

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Body Material: UNSPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; Package Style (Meter): UNCASED CHIP; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: DUAL GATE, DEPLETION MODE; No. of Elements: 1;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JEDEC-95 Code: TO-226AA; Maximum Operating Temperature: 150 Cel;

RF Small Signal Field-Effect Transistors;

2N4416A by Texas Instruments is an N-CHANNEL FET with 35V DS Breakdown Voltage, 10dB Power Gain, and operates in DEPLETION MODE. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its JUNCTION technology and 0.3W power dissipation capability at 200°C.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 7 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Terminal Position: BOTTOM;

BF511,215 by NXP Semiconductors is an N-CHANNEL RF FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a max power dissipation of 0.25 W. Ideal for AMPLIFIER applications due to its small outline package style and GULL WING terminal form.