OTP ROM

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
AT27C256R-70PU	Microchip Technology	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	6.35 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.001 Amp	37.4015 mm	70 ns	5
AT27C256R-70JU	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32	2	5.5 V	3.556 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e3	40	245	.001 Amp	13.97 mm	70 ns	5
AT27C512R-70PU	Microchip Technology	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	6.35 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	37.4015 mm	70 ns	5
AT27C256R-45PU	Microchip Technology	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	6.35 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.001 Amp	37.4015 mm	45 ns	5
AT27C256R-70JU-T	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5		8	CHIP CARRIER	LCC32,.45X.55		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		QUAD	1	R-PQCC-J32		5.5 V	3.556 mm	11.43 mm		262144 bit	4.5 V					.0001 Amp	13.97 mm	70 ns	13
AT27C512R-45PU	Microchip Technology	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	6.35 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	37.4015 mm	45 ns	5
AT27C256R-45JU	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32	2	5.5 V	3.556 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e3	40	245	.001 Amp	13.97 mm	45 ns	5
AT27C256R-45JU-T	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5		8	CHIP CARRIER	LCC32,.45X.55		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32		5.5 V	3.556 mm	11.43 mm		262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	45 ns	13
AT27C512R-70JU	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e3	40	245	.0001 Amp	13.97 mm	70 ns	5
AT27C010-70PU	Microchip Technology	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T32		5.5 V	4.826 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.00001 Amp	42.037 mm	70 ns	13
AT27C512R-45JU	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e3	40	245	.0001 Amp	13.97 mm	45 ns	5
AT27C512R-70JU-T	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5		8	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32		5.5 V	3.556 mm	11.43 mm		524288 bit	4.5 V		e3			.0001 Amp	13.97 mm	70 ns	5
AT27C512R-45JU-T	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5		8	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32		5.5 V	3.556 mm	11.43 mm		524288 bit	4.5 V		e3	30	260	.0001 Amp	13.97 mm	45 ns	5
DS2502P-E48/T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	SYNCHRONOUS	.005 mA	1024 words	COMMON		3/5	1	SMALL OUTLINE, LOW PROFILE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-C6		6 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V		e0			.000005 Amp	3.94 mm
DS2502P-E48+T&R	Analog Devices	OTP ROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS	.005 mA	1024 words	COMMON		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.81 mm	Not Qualified	1024 bit	2.8 V		e3	30	260	.000005 Amp	3.937 mm
DS2502P-E48	Maxim Integrated	OTP ROM	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	SYNCHRONOUS	.005 mA	1024 words	COMMON		3/5	1	SMALL OUTLINE, LOW PROFILE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V		e0	20	240	.000005 Amp	3.94 mm
DS2502P-E48+	Analog Devices	OTP ROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS	.005 mA	1024 words	COMMON		3/5	1	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V		e3	30	260	.000005 Amp	3.94 mm
AT27C256R-70JU-306	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER			1.27 mm	85 Cel		32KX8	32K	-40 Cel		QUAD		R-PQCC-J32		5.5 V	3.556 mm	11.43 mm		262144 bit	4.5 V						13.97 mm	70 ns
AT27C256R-70JUSL383	Microchip Technology	OTP ROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	SEPARATE	5		8	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	85 Cel		32KX8	32K	-40 Cel		QUAD		R-PQCC-J32		5.5 V	3.556 mm	11.43 mm		262144 bit	4.5 V					.001 Amp	13.97 mm	70 ns	5
AT27C010-70JU	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	OTP ROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e3	40	245	.00001 Amp	13.97 mm	70 ns	13
AT27C040-70PU	Microchip Technology	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T32		5.5 V	4.826 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	42.037 mm	70 ns	13
AT27C1024-70PU	Microchip Technology	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T40		5.5 V	4.826 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.324 mm	70 ns	13
AT27C010-70JU-T	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5		8	CHIP CARRIER	LCC32,.45X.55		1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		QUAD	1	R-PQCC-J32		5.5 V	3.556 mm	11.43 mm		1048576 bit	4.5 V					.0001 Amp	13.97 mm	70 ns	13
M27C512-90C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	QUAD		R-PQCC-J32		5.5 V	3.56 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	13.97 mm	90 ns
AT27C1024-70JU	Microchip Technology	OTP ROM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	QUAD	1	S-PQCC-J44	3	5.5 V	4.572 mm	16.586 mm	Not Qualified	1048576 bit	4.5 V		e3	40	245	.0001 Amp	16.586 mm	70 ns	13
AT27C4096-55JU	Microchip Technology	OTP ROM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	1	S-PQCC-J44	3	5.5 V	4.572 mm	16.586 mm	Not Qualified	4194304 bit	4.5 V		e3	40	245	.0001 Amp	16.586 mm	55 ns	13
AT27C040-70JU	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	OTP ROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e3	40	245	.0001 Amp	13.97 mm	70 ns	13
AT27C040-90JU	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	OTP ROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32	3	5.5 V	3.556 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e3	40	245	.0001 Amp	13.97 mm	90 ns	13
M27C512-90B6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.83 mm	90 ns
AT27C512R-90PI	Atmel	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28	1	5.5 V	5.59 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.95 mm	90 ns
AT27C1024-70JU-T	Microchip Technology	OTP ROM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5		16	CHIP CARRIER	LDCC44,.7SQ		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	QUAD	1	S-PQCC-J44		5.5 V	4.572 mm	16.586 mm		1048576 bit	4.5 V		e3			.0001 Amp	16.586 mm	70 ns	13
DS2502P/T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0	20	240		3.94 mm	15000 ns
DS2502P+T&R	Analog Devices	OTP ROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		128 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260		3.94 mm
AT27C020-55PU	Microchip Technology	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T32		5.5 V	4.826 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	42.037 mm	55 ns	13
AT27C512R-12JC	Atmel	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	QUAD		R-PQCC-J32	2	5.5 V	3.55 mm	11.43 mm	Not Qualified	524288 bit	4.5 V		e0		225	.0001 Amp	13.97 mm	120 ns
DS2502R/T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	Other Memory ICs	.95 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL		R-PDSO-G3	1	6 V	1.12 mm	1.3 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0				2.92 mm	15000 ns
DS2502R+T&R	Analog Devices	OTP ROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	Other Memory ICs	.95 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G3	1	6 V	1.12 mm	1.3 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260		2.92 mm	15000 ns
AT27C512R-70PC	Atmel	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	1	5.5 V	5.59 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.95 mm	70 ns
AT27C020-90PU	Microchip Technology	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T32		5.5 V	4.826 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	42.037 mm	90 ns	13
AT27C512R-15PC	Atmel	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	1	5.5 V	5.59 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.95 mm	150 ns
DS2502P	Maxim Integrated	OTP ROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0	20	240		3.94 mm	15000 ns
DS2502P+	Analog Devices	OTP ROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOC6,.17	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260		3.94 mm	15000 ns
AT27LV040A-90JU	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	524288 words	COMMON	3.3	3.3/5	8	CHIP CARRIER	LCC32,.45X.55	OTP ROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32	3	3.6 V	3.556 mm	11.43 mm	Not Qualified	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY	e3	40	245	.00002 Amp	13.97 mm	90 ns	13
5962-8851806LA	Defense Logistics Agency	OTP ROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		512 words		5		8	IN-LINE				125 Cel		512X8	512	-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V			Qualified	4096 bit	4.5 V		e0
AT27C4096-90JU	Microchip Technology	OTP ROM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	1	S-PQCC-J44	3	5.5 V	4.572 mm	16.586 mm	Not Qualified	4194304 bit	4.5 V		e3	40	245	.0001 Amp	16.586 mm	90 ns	13
DS2502-E48	Maxim Integrated	OTP ROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	.005 mA	1024 words	COMMON		3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		6 V			Not Qualified	1024 bit	2.8 V		e0		245	.000005 Amp
DS2502-E48+	Analog Devices	OTP ROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS	.005 mA	1024 words	COMMON		3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel		1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM		O-PBCY-T3		6 V			Not Qualified	1024 bit	2.8 V		e3		250	.000005 Amp
5962-8851805LA	Defense Logistics Agency	OTP ROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		512 words		5		8	IN-LINE				125 Cel		512X8	512	-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V			Qualified	4096 bit	4.5 V		e0

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.