National Semiconductor - MMBTH81D87Z

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 55000 MHz; Maximum Collector Current (IC): .04 A; Maximum Collector-Emitter Voltage: 2.8 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .03 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .06 A; Terminal Form: FLAT;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Package Shape: ROUND; Qualification: Not Qualified;

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Terminal Position: BOTTOM;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;

The NXP Semiconductors BFR520 is a RF Small Signal BJT transistor with NPN polarity, ideal for amplifier applications. It has a max power dissipation of 0.3W, operates in L Band frequency up to 9000MHz, and can handle a max collector current of 0.07A.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 13000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .15 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .05 A; Additional Features: EUROPEAN PART NUMBER;

The NXP Semiconductors BFU530WX is an RF BJT transistor with NPN polarity, suitable for amplifier applications in the L Band. It has a max operating temperature of 150°C, a collector-emitter voltage of 12V, and a transition frequency of 11GHz. This small outline transistor comes in a plastic/epoxy package with gull wing terminals for surface mount assembly.

ROHM's EMX5T2R is a NPN BJT with 2 elements, ideal for amplifier applications. It features a max collector-emitter voltage of 11V, fT of 3200MHz, and hFE min of 27. With a small outline package style and surface mount capability, it offers high performance in compact designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .07 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2100 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; No. of Elements: 1; Highest Frequency Band: S BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;