Infineon Technologies - BFS17PE6327HTSA1

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: METAL;

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi);

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Collector Current (IC): .035 A; Package Style (Meter): SMALL OUTLINE;

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON;

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 14;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .025 A; JEDEC-95 Code: TO-92;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): 1 A;

MMBTH10-4LT1G by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 800MHz. Ideal for ultra-high frequency applications, it has a small outline package, matte tin finish, and operates up to 150°C.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1.6 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .03 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .025 A; JESD-609 Code: e0;

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 14;

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

BFR93AW-E6327 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in L Band with a transition frequency of 6000 MHz, ideal for amplifier applications. This small outline package has a max power dissipation of 0.3 W and can handle up to 12 V collector-emitter voltage.

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .15 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; JESD-30 Code: O-PBCY-T3; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .02 A;