NXP Semiconductors - BFU760F,115

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BFU760F,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFU760F,115
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .22 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 155;
Datasheet BFU760F,115 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .07 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON GERMANIUM
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 155
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .22 W
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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