RF Small Signal Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Minimum Power Gain (Gp)	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BFP450H6740	Infineon Technologies	NPN	SINGLE	YES	42000 MHz		.15 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE					.4 pF	SILICON GERMANIUM CARBON	4 V			DUAL	R-PDSO-G4				LOW NOISE			NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
BFP720FH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	45000 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	RECTANGULAR	1	X BAND	4	SMALL OUTLINE						SILICON GERMANIUM CARBON	4 V		TIN	DUAL	R-PDSO-F4	1					e3			AEC-Q101
BFR35APE6327HTSA1	Infineon Technologies	NPN	SINGLE	YES	5000 MHz		.045 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE					.55 pF	SILICON	15 V		TIN	DUAL	R-PDSO-G3	1					e3			AEC-Q101
BFR380FH6327XTSA1	Infineon Technologies																									TIN			1					e3
Q62702-F1590	Infineon Technologies	NPN	SINGLE WITH BUILT-IN DIODE	YES	24000 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE					.75 pF	SILICON	4.5 V			DUAL	R-PDSO-G4				HIGH RELIABILITY
2N5109	Texas Instruments	NPN	SINGLE	NO	1200 MHz		.4 A	METAL	AMPLIFIER			WIRE	ROUND	1	VERY HIGH FREQUENCY BAND	3	CYLINDRICAL					3.5 pF	SILICON	20 V			BOTTOM	O-MBCY-W3			Not Qualified	LOW NOISE	TO-39
AT-41511-TR1G	Broadcom	NPN	SINGLE	YES	10000 MHz	.225 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	C BAND	4	SMALL OUTLINE	Other Transistors			150 Cel		SILICON	12 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e3		260
BFG425WT/R	NXP Semiconductors	NPN	SINGLE	YES	25000 MHz	.135 W	.03 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE	Other Transistors	.135 W	50	150 Cel		SILICON	4.5 V		MATTE TIN	DUAL	R-PDSO-G4		EMITTER	Not Qualified	LOW NOISE		e3		260
BFG541	NXP Semiconductors	NPN	SINGLE	YES	9000 MHz	.65 W	.12 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE	Other Transistors	.65 W	60	175 Cel		SILICON			Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified	HIGH RELIABILITY, LOW NOISE		e3	30	260
BFG67/X,215	NXP Semiconductors	NPN	SINGLE	YES	8000 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE	Other Transistors	.3 W	60	175 Cel		SILICON	10 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e3		260	CECC
BFP420E6327	Infineon Technologies	NPN	SINGLE WITH BUILT-IN DIODE	YES	25000 MHz	.16 W	.035 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	X BAND	4	SMALL OUTLINE	Other Transistors		50	150 Cel	.24 pF	SILICON	4.5 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	EMITTER	Not Qualified	LOW NOISE, HIGH RELIABILITY		e3	40	260
BFP520H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	45000 MHz	.1 W	.04 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE	Other Transistors		70	150 Cel	.13 pF	SILICON	2.5 V		TIN	DUAL	R-PDSO-G4	1			LOW NOISE		e3			AEC-Q101
BFR340FH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	14000 MHz		.02 A	PLASTIC/EPOXY	AMPLIFIER			FLAT	RECTANGULAR	1	S BAND	3	SMALL OUTLINE					.4 pF	SILICON	6 V		TIN	DUAL	R-PDSO-F3	1			LOW NOISE		e3			AEC-Q101
BFU768F,115	NXP Semiconductors	NPN		YES		.22 W	.07 A							1				BIP RF Small Signal		155			SILICON GERMANIUM			TIN			1					e3	30	260
HFA3102BZ	Renesas Electronics	NPN	COMPLEX	YES	10000 MHz		.03 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	6	ULTRA HIGH FREQUENCY BAND	14	SMALL OUTLINE			40	85 Cel	300 pF	SILICON	8 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G14	3				MS-012AB	e3	30	260
JAN2N4957UB	Defense Logistics Agency	PNP	SINGLE	YES			.03 A	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			NO LEAD	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					.8 pF	SILICON	30 V			DUAL	R-CDSO-N3			Qualified	LOW NOISE					MIL-19500/426
NE85633-T1B-A	Renesas Electronics	NPN	SINGLE	YES	7000 MHz	.2 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors	.2 W	50	150 Cel	1 pF	SILICON	12 V		TIN BISMUTH	DUAL	R-PDSO-G3			Not Qualified			e6
NTE2403	Nte Electronics	PNP	SINGLE	YES	5000 MHz	.2 W	.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors					SILICON	15 V			DUAL	R-PDSO-G3			Not Qualified	LOW NOISE			NOT SPECIFIED	NOT SPECIFIED
BF824,215	NXP Semiconductors	PNP	SINGLE	YES	450 MHz	.3 W	.025 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		3	SMALL OUTLINE	Other Transistors			150 Cel	.3 pF	SILICON	30 V		TIN	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
BFU710F,115	NXP Semiconductors																									TIN			1					e3	30	260
JAN2N4957	Defense Logistics Agency	PNP	SINGLE	NO			.03 A	METAL	AMPLIFIER			WIRE	ROUND	1	ULTRA HIGH FREQUENCY BAND	4	CYLINDRICAL					.8 pF	SILICON	30 V			BOTTOM	O-MBCY-W4		ISOLATED	Qualified		TO-72				MIL-19500/426
2SC4082T106P	ROHM	NPN	SINGLE	YES	1500 MHz	.2 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		82	150 Cel	1.5 pF	SILICON	20 V		TIN SILVER COPPER	DUAL	R-PDSO-G3	1		Not Qualified			e1	10	260
BF959G	Onsemi	NPN	SINGLE	NO	700 MHz	1.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	ROUND	1	VERY HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		35	150 Cel		SILICON	20 V		TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1		260
BF959RL1G	Onsemi	NPN	SINGLE	NO	700 MHz	1.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	ROUND	1	VERY HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		35	150 Cel		SILICON	20 V		TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1		260
BF959ZL1	Onsemi	NPN	SINGLE	NO	700 MHz	1.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	ROUND	1	VERY HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		35	150 Cel		SILICON	20 V		TIN LEAD	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e0		235
BF959ZL1G	Onsemi	NPN	SINGLE	NO	700 MHz	1.5 W	.1 A	PLASTIC/EPOXY	AMPLIFIER			THROUGH-HOLE	ROUND	1	VERY HIGH FREQUENCY BAND	3	CYLINDRICAL	Other Transistors		35	150 Cel		SILICON	20 V		TIN SILVER COPPER	BOTTOM	O-PBCY-T3			Not Qualified	EUROPEAN PART NUMBER	TO-92	e1		260
BFR92AR-GELB	Vishay Telefunken	NPN	SINGLE	YES	5500 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1		3	SMALL OUTLINE						SILICON	15 V			DUAL	R-PDSO-G3			Not Qualified	LOW NOISE
BFR92AR-GS08	Vishay Telefunken	NPN	SINGLE	YES	6000 MHz		.03 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE						SILICON	15 V			DUAL	R-PDSO-G3			Not Qualified	LOW NOISE
BFS17HTA	Diodes Incorporated	NPN	SINGLE	YES	1300 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.5 pF	SILICON	15 V		MATTE TIN	DUAL	R-PDSO-G3	1		Not Qualified			e3		260
BFU550AVL	NXP Semiconductors	NPN	SINGLE	YES	11000 MHz	.45 W	.08 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	3	SMALL OUTLINE			60	150 Cel	.74 pF	SILICON	16 V	-40 Cel	TIN	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	AEC-Q101; IEC-60134
IMX4T108	ROHM	NPN	SEPARATE, 2 ELEMENTS	YES	1500 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER	.5 V		GULL WING	RECTANGULAR	2		6	SMALL OUTLINE	Other Transistors		56	150 Cel	1.6 pF	SILICON	20 V		TIN SILVER COPPER	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
2SC4083T106N	ROHM	NPN	SINGLE	YES	3200 MHz	.2 W	.05 A	PLASTIC/EPOXY	AMPLIFIER	.5 V		GULL WING	RECTANGULAR	1	S BAND	3	SMALL OUTLINE	Other Transistors		56	150 Cel	1.5 pF	SILICON	11 V		Tin/Silver/Copper (Sn/Ag/Cu)	DUAL	R-PDSO-G3	1		Not Qualified			e1	10	260
BFP182WH6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	8000 MHz		.035 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE					.5 pF	SILICON	12 V		TIN	DUAL	R-PDSO-G4	1			LOW NOISE		e3			AEC-Q101
BFS17TA	Diodes Incorporated	NPN	SINGLE	YES	1300 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.5 pF	SILICON	15 V			DUAL	R-PDSO-G3			Not Qualified
BFS17W,115	NXP Semiconductors	NPN	SINGLE	YES	1600 MHz	.3 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors	.3 W	25	175 Cel	1.5 pF	SILICON	15 V		TIN	DUAL	R-PDSO-G3			Not Qualified			e3	30	260
BFU550VL	NXP Semiconductors	NPN	SINGLE	YES	11000 MHz	.45 W	.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE			60	150 Cel	.72 pF	SILICON	16 V	-40 Cel	TIN	DUAL	R-PDSO-G4	1	COLLECTOR		LOW NOISE		e3	30	260	AEC-Q101; IEC-60134
BFU550XVL	NXP Semiconductors	NPN	SINGLE	YES	11000 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE						SILICON	12 V		TIN	DUAL	R-PDSO-G4	1			LOW NOISE		e3	30	260	AEC-Q101; IEC-60134
BFG35,115	NXP Semiconductors	NPN	SINGLE	YES	4000 MHz	1 W	.15 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	4	SMALL OUTLINE	Other Transistors	1 W	25	175 Cel		SILICON	18 V		Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260	CECC
BFP540H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES	30000 MHz		.08 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	L BAND	4	SMALL OUTLINE					.24 pF	SILICON	4.5 V		TIN	DUAL	R-PDSO-G4	1	EMITTER		HIGH RELIABILITY		e3			AEC-Q101
BFP843H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES		.125 W	.055 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	1	C BAND	4	SMALL OUTLINE			150	150 Cel	5.23 pF	SILICON	2.25 V		TIN	DUAL	R-PDSO-G4	1	EMITTER		LOW NOISE		e3
BLF871	NXP Semiconductors	NPN	SINGLE	YES				CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	2	FLANGE MOUNT				200 Cel	1 pF	SILICON				DUAL	R-CDFM-F2	NOT APPLICABLE		Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
CA3083Z	Renesas Electronics	NPN	SEPARATE, 5 ELEMENTS	NO	450 MHz	.5 W	.1 A	PLASTIC/EPOXY	SWITCHING			THROUGH-HOLE	RECTANGULAR	5	VERY HIGH FREQUENCY BAND	16	IN-LINE	Other Transistors		40	150 Cel		SILICON	15 V		MATTE TIN	DUAL	R-PDIP-T16			Not Qualified			e3
HFA3102B96	Renesas Electronics	NPN	COMPLEX	YES	10000 MHz		.03 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	6	ULTRA HIGH FREQUENCY BAND	14	SMALL OUTLINE			40	85 Cel	300 pF	SILICON	8 V	-40 Cel		DUAL	R-PDSO-G14					MS-012AB
2SC4215-OTE85L	Toshiba	NPN	SINGLE	YES	550 MHz	.1 W	.02 A	PLASTIC/EPOXY	AMPLIFIER		17 dB	GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		70	125 Cel		SILICON	30 V		TIN LEAD	DUAL	R-PDSO-G3			Not Qualified			e0
2SC5107-O(TE85L,F)	Toshiba	NPN	SINGLE	YES	4000 MHz	.1 W	.03 A							1				Other Transistors		80	125 Cel
BFM520,115	NXP Semiconductors	NPN	SEPARATE, 2 ELEMENTS	YES	9000 MHz		.07 A	PLASTIC/EPOXY	SWITCHING			GULL WING	RECTANGULAR	2	L BAND	6	SMALL OUTLINE	Other Transistors		60	175 Cel		SILICON	8 V		TIN	DUAL	R-PDSO-G6			Not Qualified	LOW NOISE, HIGH RELIABILITY		e3	30	260
BFR340L3E6327XTMA1	Infineon Technologies																									GOLD			1					e4
BFS483H6327XTSA1	Infineon Technologies	NPN	SEPARATE, 2 ELEMENTS	YES	8000 MHz		.065 A	PLASTIC/EPOXY	AMPLIFIER			GULL WING	RECTANGULAR	2	L BAND	6	SMALL OUTLINE					.54 pF	SILICON	12 V		MATTE TIN	DUAL	R-PDSO-G6	1			LOW NOISE		e3			AEC-Q101

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.