RF Small Signal Bipolar Junction Transistors (BJT)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Highest Frequency Band	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
ZTX3866Q	Diodes Incorporated	NPN	SINGLE	NO	400 MHz			PLASTIC/EPOXY	AMPLIFIER		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					3 pF	SILICON	30 V			SINGLE	R-PSIP-W3		Not Qualified
FXT3866STZ	Diodes Incorporated	NPN	SINGLE	NO	400 MHz		.4 A	PLASTIC/EPOXY	AMPLIFIER		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					3 pF	SILICON	30 V			SINGLE	R-PSIP-W3		Not Qualified
BFQ31TC	Diodes Incorporated	NPN	SINGLE	YES	600 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.7 pF	SILICON	15 V			DUAL	R-PDSO-G3		Not Qualified					CECC
ZTX322STOB	Diodes Incorporated	NPN	SINGLE	NO	600 MHz		.5 A	PLASTIC/EPOXY	AMPLIFIER		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					1.7 pF	SILICON	15 V			SINGLE	R-PSIP-W3		Not Qualified
ZTX325L	Diodes Incorporated	NPN	SINGLE	NO	1300 MHz		.05 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					1.5 pF	SILICON	15 V		MATTE TIN	SINGLE	R-PSIP-W3		Not Qualified		e3	NOT SPECIFIED	NOT SPECIFIED
ZTX322STOA	Diodes Incorporated	NPN	SINGLE	NO	600 MHz		.5 A	PLASTIC/EPOXY	AMPLIFIER		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					1.7 pF	SILICON	15 V			SINGLE	R-PSIP-W3		Not Qualified
ZTX327Q	Diodes Incorporated	NPN	SINGLE	NO	800 MHz		.4 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					3 pF	SILICON	30 V			SINGLE	R-PSIP-W3		Not Qualified
ZTX325SM	Diodes Incorporated	NPN	SINGLE	YES	1300 MHz			PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					.85 pF	SILICON	15 V			SINGLE	R-PSSO-G3		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
FMMT918	Diodes Incorporated	NPN	SINGLE	YES	600 MHz	.33 W	.1 A	PLASTIC/EPOXY	AMPLIFIER	.5 V	GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE		.33 W	60	150 Cel	3 pF	SILICON	15 V	-55 Cel	MATTE TIN	DUAL	R-PDSO-G3		Not Qualified		e3
ZBF579TA	Diodes Incorporated	PNP	SINGLE	YES	2400 MHz		.03 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE						SILICON	25 V			DUAL	R-PDSO-G3		Not Qualified	LOW NOISE		NOT SPECIFIED	NOT SPECIFIED
ZUMTS17H	Diodes Incorporated	NPN	SINGLE	YES	1300 MHz		.025 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.5 pF	SILICON	15 V			DUAL	R-PDSO-G3		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
BFQ31RTA	Diodes Incorporated	NPN	SINGLE	YES	600 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.7 pF	SILICON	15 V			DUAL	R-PDSO-G3		Not Qualified
MPSH10STOB	Diodes Incorporated	NPN	SINGLE	NO	650 MHz			PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					.65 pF	SILICON	25 V			SINGLE	R-PSIP-T3		Not Qualified
MPSH10PSTOA	Diodes Incorporated	NPN	SINGLE	NO	650 MHz			PLASTIC/EPOXY	AMPLIFIER		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					.65 pF	SILICON	25 V			SINGLE	R-PSIP-W3		Not Qualified
ZTX3866SMTA	Diodes Incorporated	NPN	SINGLE	YES	400 MHz			PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					3 pF	SILICON	30 V			SINGLE	R-PSSO-G3		Not Qualified
ZTX321Q	Diodes Incorporated	NPN	SINGLE	NO	600 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					1.7 pF	SILICON	15 V			SINGLE	R-PSIP-W3		Not Qualified
ZTX322SMTC	Diodes Incorporated	NPN	SINGLE	YES	600 MHz			PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.7 pF	SILICON	15 V			SINGLE	R-PSSO-G3		Not Qualified
ZTX322L	Diodes Incorporated	NPN	SINGLE	NO	600 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					1.7 pF	SILICON	15 V			SINGLE	R-PSIP-W3		Not Qualified
ZUMTS17NTA	Diodes Incorporated	NPN	SINGLE	YES	3200 MHz		.05 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1		3	SMALL OUTLINE				150 Cel	1.5 pF	SILICON	11 V		MATTE TIN	DUAL	R-PDSO-G3	1	Not Qualified		e3	30	260
MPSH10PSM	Diodes Incorporated	NPN	SINGLE	YES	650 MHz			PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					.65 pF	SILICON	25 V			SINGLE	R-PSSO-G3		Not Qualified
ZTX3866	Diodes Incorporated	NPN	SINGLE	NO	700 MHz		.4 A	PLASTIC/EPOXY			WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					3 pF	SILICON	30 V			SINGLE	R-PSIP-W3		Not Qualified
ZTX327SMTA	Diodes Incorporated	NPN	SINGLE	YES	500 MHz			PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					3 pF	SILICON	30 V			SINGLE	R-PSSO-G3		Not Qualified
ZTX322SM	Diodes Incorporated	NPN	SINGLE	YES	600 MHz			PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.7 pF	SILICON	15 V			SINGLE	R-PSSO-G3		Not Qualified
UFMMTH10	Diodes Incorporated	NPN	SINGLE	YES	650 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					.7 pF	SILICON	25 V			DUAL	R-PDSO-G3		Not Qualified	LOW NOISE		NOT SPECIFIED	NOT SPECIFIED
FXT3866STOE	Diodes Incorporated	NPN	SINGLE	NO			.4 A	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE						SILICON	30 V			SINGLE	R-PSIP-T3		Not Qualified
ZTX3866SM	Diodes Incorporated	NPN	SINGLE	YES	400 MHz			PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					3 pF	SILICON	30 V			SINGLE	R-PSSO-G3		Not Qualified
ZTX325STZ	Diodes Incorporated	NPN	SINGLE	NO	1300 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					.85 pF	SILICON	15 V		MATTE TIN	SINGLE	R-PSIP-W3		Not Qualified		e3	NOT SPECIFIED	NOT SPECIFIED
BFQ31ARTA	Diodes Incorporated	NPN	SINGLE	YES	600 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.7 pF	SILICON	15 V			DUAL	R-PDSO-G3		Not Qualified
ZTX323Q	Diodes Incorporated	NPN	SINGLE	NO	600 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					1.7 pF	SILICON	15 V			SINGLE	R-PSIP-W3		Not Qualified
ZUMT918	Diodes Incorporated	NPN	SINGLE	YES	600 MHz		.1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					3 pF	SILICON	15 V			DUAL	R-PDSO-G3		Not Qualified
ZTX323K	Diodes Incorporated	NPN	SINGLE	NO	600 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					1.7 pF	SILICON	15 V			SINGLE	R-PSIP-W3		Not Qualified
ZTX322M1TC	Diodes Incorporated	NPN	SINGLE	YES	600 MHz		.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.7 pF	SILICON	15 V			SINGLE	R-PSSO-G3		Not Qualified
UZTX325SMTC	Diodes Incorporated	NPN	SINGLE	YES	1300 MHz			PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					.85 pF	SILICON	15 V			SINGLE	R-PSSO-G3		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
MPS5179SMTA	Diodes Incorporated	NPN	SINGLE	YES	900 MHz			PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1 pF	SILICON	12 V			SINGLE	R-PSSO-G3		Not Qualified
FXT3866SMTA	Diodes Incorporated	NPN	SINGLE	YES	400 MHz		.4 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					3 pF	SILICON	30 V			SINGLE	R-PSSO-G3		Not Qualified
MPS5179STOB	Diodes Incorporated	NPN	SINGLE	NO	900 MHz			PLASTIC/EPOXY	AMPLIFIER		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					1 pF	SILICON	12 V			SINGLE	R-PSIP-W3		Not Qualified
FXT3866SMTC	Diodes Incorporated	NPN	SINGLE	YES	400 MHz		.4 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					3 pF	SILICON	30 V			SINGLE	R-PSSO-G3		Not Qualified
BFQ31RTC	Diodes Incorporated	NPN	SINGLE	YES	600 MHz		.1 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.7 pF	SILICON	15 V			DUAL	R-PDSO-G3		Not Qualified
UZTX325STOA	Diodes Incorporated	NPN	SINGLE	NO	1300 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					.85 pF	SILICON	15 V		MATTE TIN	SINGLE	R-PSIP-W3		Not Qualified		e3	NOT SPECIFIED	NOT SPECIFIED
MPSH10PSTOB	Diodes Incorporated	NPN	SINGLE	NO	650 MHz			PLASTIC/EPOXY	AMPLIFIER		WIRE	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	IN-LINE					.65 pF	SILICON	25 V			SINGLE	R-PSIP-W3		Not Qualified
MMBTH10-13	Diodes Incorporated	NPN	SINGLE	YES	650 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE				150 Cel	.7 pF	SILICON	25 V		TIN LEAD	DUAL	R-PDSO-G3		Not Qualified		e0
BFS17TC	Diodes Incorporated	NPN	SINGLE	YES	1300 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					1.5 pF	SILICON	15 V			DUAL	R-PDSO-G3		Not Qualified
BFS20TC	Diodes Incorporated	NPN	SINGLE	YES	450 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE					.4 pF	SILICON	20 V			DUAL	R-PDSO-G3		Not Qualified
BFS17H-E1H	Diodes Incorporated
MMBTH10-7	Diodes Incorporated	NPN	SINGLE	YES	650 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					.7 pF	SILICON	25 V		TIN LEAD	DUAL	R-PDSO-G3		Not Qualified		e0
BFS17H	Diodes Incorporated	NPN	SINGLE	YES	1300 MHz	.33 W	.025 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE	Other Transistors		70		1.5 pF	SILICON	15 V		MATTE TIN	DUAL	R-PDSO-G3	1	Not Qualified		e3	30	260
MMBTH24-7	Diodes Incorporated	NPN	SINGLE	YES	400 MHz		.05 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	ULTRA HIGH FREQUENCY BAND	3	SMALL OUTLINE					.7 pF	SILICON	40 V		TIN LEAD	DUAL	R-PDSO-G3		Not Qualified		e0
BFS20TA	Diodes Incorporated	NPN	SINGLE	YES	450 MHz		.025 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	VERY HIGH FREQUENCY BAND	3	SMALL OUTLINE					.4 pF	SILICON	20 V			DUAL	R-PDSO-G3		Not Qualified

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.