Infineon Technologies - BFT92E6327

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BFT92E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFT92E6327
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;
Datasheet BFT92E6327 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 5000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .025 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 15
Minimum Operating Temperature: -65 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Maximum Collector-Base Capacitance: .8 pF
Peak Reflow Temperature (C): 260
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