Infineon Technologies - BFR93AE6327HTSA1

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BFR93AE6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFR93AE6327HTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
Datasheet BFR93AE6327HTSA1 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 6000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 70
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Maximum Collector-Base Capacitance: .9 pF
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