RF Power Field Effect Transistors (FET)

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
LET16045C	STMicroelectronics	N-CHANNEL	SINGLE	YES	100 W	PLASTIC/EPOXY	AMPLIFIER	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	9 A	2	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		9 A	DUAL	R-PDFM-F2		SOURCE				NOT SPECIFIED	NOT SPECIFIED
STAP57045	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		5 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified
PD60004S	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON			DUAL	R-PDSO-F2			Not Qualified
LET19060C	STMicroelectronics	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	130 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND	7 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		7 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified
PD57018TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	31.7 W	PLASTIC/EPOXY	AMPLIFIER	65 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	MATTE TIN	2.5 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY	e3	30	250
PD54003-01	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		4 A	QUAD	S-PQCC-N5		SOURCE	Not Qualified	HIGH RELIABILITY
PD20015STR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		7 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
STAP57100	STMicroelectronics	N-CHANNEL	SINGLE	YES	190 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	14 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		14 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified
STAC1011-350	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON			DUAL	R-PDFM-F2		SOURCE				NOT SPECIFIED	NOT SPECIFIED
STAC2942F	STMicroelectronics	N-CHANNEL	SINGLE	YES	625 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	130 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	40 A	4	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		40 A	DUAL	R-CDFP-F4		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
PD57045TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	65 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	Matte Tin (Sn) - annealed	5 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified		e3	30	250
LET8180	STMicroelectronics	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	289 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND	18 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		18 A	DUAL	R-PDFM-F4		SOURCE	Not Qualified
PD57070S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	95 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	Matte Tin (Sn) - annealed	7 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified		e3	30	250
LET9002	STMicroelectronics	N-CHANNEL	SINGLE	YES	4 W	PLASTIC/EPOXY	AMPLIFIER	65 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.25 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		4 A	QUAD	S-PQCC-N5		SOURCE	Not Qualified	HIGH RELIABILITY
ST24180	STMicroelectronics
PD60015	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON			DUAL	R-PDSO-G2			Not Qualified
PD84008TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		7 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
PD20015-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		7 A	DUAL	R-PDFM-G2		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
PD20010STR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	59 W	PLASTIC/EPOXY	AMPLIFIER	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	5 A	2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		5 A	DUAL	R-PDFP-F2		SOURCE	Not Qualified	ESD PROTECTION, HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
PD85025TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	MATTE TIN	7 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified		e3
RF5L08600CB4	STMicroelectronics																				Nickel/Gold/Cobalt (Ni/Au/Co)				3
ST16010	STMicroelectronics																													NOT SPECIFIED	NOT SPECIFIED
PD54003S	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	TIN LEAD	4 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY	e0
TSD2903	STMicroelectronics	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	3.9 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		3.9 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified
LET9006	STMicroelectronics	N-CHANNEL	SINGLE	YES	16 W	PLASTIC/EPOXY	AMPLIFIER	65 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	1 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1 A	QUAD	S-PQCC-N5		SOURCE	Not Qualified	HIGH RELIABILITY
LET9060C	STMicroelectronics	N-CHANNEL	SINGLE	YES	118 W	PLASTIC/EPOXY	AMPLIFIER	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		12 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
STAC4932B	STMicroelectronics	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON			DUAL	R-CDFM-F4		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
PD54003L	STMicroelectronics	N-CHANNEL	SINGLE	YES	44 W	PLASTIC/EPOXY	AMPLIFIER	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	4 A	QUAD	S-PQCC-N5		SOURCE	Not Qualified	HIGH RELIABILITY	e0
PD85025STR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	MATTE TIN	7 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified		e3
LET9045S	STMicroelectronics	N-CHANNEL	SINGLE	YES	160 W	PLASTIC/EPOXY	AMPLIFIER	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	Matte Tin (Sn) - annealed	9 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified	HIGH RELIABILITY	e3	30	250
PD85015-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	59 W	PLASTIC/EPOXY	AMPLIFIER	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		5 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
STAC2933	STMicroelectronics	N-CHANNEL	SINGLE	YES	795 W							1		40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel			40 A								NOT SPECIFIED	NOT SPECIFIED
STAC4933	STMicroelectronics	N-CHANNEL	SINGLE	YES	795 W							1		40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel			40 A								NOT SPECIFIED	NOT SPECIFIED
RF2L24280CB4	STMicroelectronics																				Nickel/Gold/Cobalt (Ni/Au/Co)				3
PD20015C	STMicroelectronics	N-CHANNEL	SINGLE	YES	93 W	PLASTIC/EPOXY	AMPLIFIER	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	7 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		7 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
SD56150	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	17 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		17 A	DUAL	R-PDFM-F4		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
PD57002-01	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	65 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.25 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.25 A	QUAD	S-PQCC-N5		SOURCE	Not Qualified	HIGH RELIABILITY
PD57006S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	20 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	1 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified		e3	30	250
RF5L051K4CB4	STMicroelectronics																				Nickel/Gold/Cobalt (Ni/Au/Co)				3
RF5L051K0CB4	STMicroelectronics																				Nickel/Gold/Cobalt (Ni/Au/Co)				3
RF4L15400CB4	STMicroelectronics																				Nickel/Gold/Cobalt (Ni/Au/Co)				3
RF5L051K5CB4	STMicroelectronics
RF5L052K0CB4	STMicroelectronics
RF5L05950CF2	STMicroelectronics																				Nickel/Gold/Cobalt (Ni/Au/Co)				3
RF5L05750CF2	STMicroelectronics																				Nickel/Gold/Cobalt (Ni/Au/Co)				3
PD55035-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	95 W	PLASTIC/EPOXY	AMPLIFIER	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	MATTE TIN	7 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY	e3
SD2933	STMicroelectronics	N-CHANNEL	SINGLE	NO	648 W	PLASTIC/EPOXY		125 V	FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	40 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		40 A	RADIAL	O-PRFM-F4		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
PD55035S	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	8.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	TIN LEAD	7 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY	e0

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.