RF Power Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
AFT26P100-4WSR3	NXP Semiconductors	N-CHANNEL	SINGLE										1					FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel														40	260
MRF7S19100NBR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON		MATTE TIN			DUAL	R-PDFM-F4	3	SOURCE	Not Qualified		TO-272	e3
MRFX600H-230MHZ	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS	YES		PLASTIC/EPOXY	AMPLIFIER	179 V	24.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON	-40 Cel				DUAL	R-PDFM-F4		SOURCE					NOT SPECIFIED	NOT SPECIFIED	1.1 pF
AFT21S230SR3	NXP Semiconductors	N-CHANNEL	SINGLE		161 W								1					FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel														40	260
BLF547	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	10 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	225 W	200 Cel	SILICON			.5 ohm	9 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified	HIGH RELIABILITY					21 pF
935322369178	NXP Semiconductors
935310166128	NXP Semiconductors																																		40	260
BLF573S	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	110 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	42 A	2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON				42 A	DUAL	R-CDFP-F2	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MRF9210R3	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	565 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
AFT20S015GNR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES									1					FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel			TIN					3					e3	40	260
BLU6H0410L-600P	NXP Semiconductors																												NOT APPLICABLE						NOT SPECIFIED	NOT SPECIFIED
BLF7G20L-160P	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified
A3T21H456W23SR6	NXP Semiconductors																																		40	260
935362002598	NXP Semiconductors
BLL6H1214P2S-250	NXP Semiconductors
934062292112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	100 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				54 A	DUAL	R-CDFM-F2		SOURCE
BLF578XRS	NXP Semiconductors																												NOT APPLICABLE						NOT SPECIFIED	NOT SPECIFIED
935362677578	NXP Semiconductors																							TIN					3					e3	40	260
934060066135	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFM-F2		SOURCE
934061847118	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLATPACK		METAL-OXIDE SEMICONDUCTOR			SILICON				3.1 A	DUAL	R-CDFP-F2		SOURCE
935311705178	NXP Semiconductors																																		40	260
A2T21H360-24SR6	NXP Semiconductors																																		40	260
BLF7G27LS-150P	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON				37 A	DUAL	R-CDFP-F4	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MRF7S19120NR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON		Matte Tin (Sn)			DUAL	R-PDFM-F4	3	SOURCE	Not Qualified		TO-270	e3	40	260
BLM6G22-30G,127	NXP Semiconductors
BLS6G3135-20,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	60 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND	2.1 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON				2.1 A	DUAL	R-CDFM-F2	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MRF5S21090LSR3	NXP Semiconductors	N-CHANNEL	SINGLE	YES	224 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFP-F2		SOURCE	Not Qualified
A3T23H450W23SR6	NXP Semiconductors																																		40	260
935315703118	NXP Semiconductors																																		40	260
935362013178	NXP Semiconductors																																		40	260
BLF4G22-130	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				15 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified
BLF8G09LS-270W	NXP Semiconductors
AFT09MS031GNR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	317 W								1					FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN					3					e3	40	260
MRF9045NBR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	177 W	PLASTIC/EPOXY	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN			DUAL	R-PDFM-F2	3	SOURCE	Not Qualified		TO-272	e3	40	260
935363146128	NXP Semiconductors																																		40	260
MRFX1K80H-88MHZ	NXP Semiconductors																																		NOT SPECIFIED	NOT SPECIFIED
BLF7G27L-100	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON				28 A	DUAL	R-CDFM-F2	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MRF377HR3	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	648 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND	17 A	4	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				17 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified				40	260
BLS6G2735LS-30	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	60 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLATPACK		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFP-F2	NOT APPLICABLE	SOURCE					NOT SPECIFIED	NOT SPECIFIED
BLP8G05S-200	NXP Semiconductors
933817040112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON				3 A	RADIAL	O-CRFM-F4		ISOLATED	Not Qualified	LOW NOISE, HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
MRF5S21045MR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	130 W	PLASTIC/EPOXY	AMPLIFIER	68 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		4	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					DUAL	R-PDFP-F4	3	SOURCE	Not Qualified		TO-270		40	260
935320096178	NXP Semiconductors																																		40	260
A2T18S160W31SR3	NXP Semiconductors																																		40	260
934056639135	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				4.5 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
934065661112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR			SILICON				33 A	DUAL	R-CDFP-F4		SOURCE
MRF5S21150R3	NXP Semiconductors	N-CHANNEL	SINGLE	YES	350 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F2		SOURCE	Not Qualified
MRF5S19150HR3	NXP Semiconductors	N-CHANNEL	SINGLE	YES	427 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		GOLD			DUAL	R-CDFM-F2		SOURCE	Not Qualified			e4

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.