STMicroelectronics - STAC2933

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 20 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; No. of Terminals: 4;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Maximum Drain Current (Abs) (ID): 16 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-30 Code: R-PQSO-N4; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Elements: 1; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: RADIAL; Minimum DS Breakdown Voltage: 65 V;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: 70 W; No. of Terminals: 2; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;

CG2H40025F by Wolfspeed is an N-CHANNEL RF Power FET with a 84V DS Breakdown Voltage and 13dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring Gallium Nitride technology, it operates from -40 to 150 °C with a max ID of 3A and Crss of 0.4pF.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20.8 W; Maximum Drain Current (ID): 2 A; Terminal Form: NO LEAD;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Elements: 2; Package Style (Meter): FLANGE MOUNT;