RF Power Field Effect Transistors (FET)

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
PTFB193404FV1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		6	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			DUAL	R-CDFP-F6		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
PTFB072707FHV1R0	Infineon Technologies
PTRA093302FCV1R0	Infineon Technologies																															NOT SPECIFIED	NOT SPECIFIED
GTVA126001ECV1R2	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V		FLAT	RECTANGULAR	DEPLETION MODE	1	L BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		225 Cel	GALLIUM NITRIDE			DUAL	R-CDFM-F2		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTFC261402FCV1R0	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	17 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE
PXAC261212FCV1R250	Infineon Technologies
CLY38-00ES	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	14 V		FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND	5.6 A	2	FLANGE MOUNT	Other Transistors	METAL SEMICONDUCTOR	30 W	175 Cel	GALLIUM ARSENIDE	MATTE TIN	5.6 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified	HIGH RELIABILITY	e3			ESA-SCC-5614/008
PTF210301F	Infineon Technologies	N-CHANNEL	SINGLE	YES	145 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON	MATTE TIN		DUAL	R-CDFP-F2			Not Qualified	HIGH RELIABILITY	e3
GTVA261701FAV1R2	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V	16 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLATPACK		HIGH ELECTRON MOBILITY		225 Cel	GALLIUM NITRIDE		7.5 A	DUAL	R-CDFP-F2		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PXAD214218FVV1R0XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	15 dB	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		6	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			QUAD	R-CQFP-X6		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTFB241402FV1R0	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	16.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE
PTVA035002EVV1XWSA1	Infineon Technologies																															NOT SPECIFIED	NOT SPECIFIED
PTAC210802FC-80W	Infineon Technologies
PTRA093302FCV1R2XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V	16 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTFB212507SHV1R250	Infineon Technologies																															NOT SPECIFIED	NOT SPECIFIED
PTFB183404E-340W	Infineon Technologies
PTVA043502ECV1R2XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFM-F4		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTFB090901FAV1	Infineon Technologies
PTVA120251EAV2XWSA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V	17 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			DUAL	R-CDFM-F2		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PXAC203302FVV1R250XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	15 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PXAC241702FCV1XWSA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	15.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTAC210802FCV1R0XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	15.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFP-F2		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTFC270101MV1R1KXUMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V	19.5 dB	NO LEAD	SQUARE	ENHANCEMENT MODE	1	S BAND		10	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON	NICKEL PALLADIUM GOLD		DUAL	S-PDSO-N10	3	SOURCE			e4
PXAC261002FCV1R0	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	14.1 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE
PTFB193404FV1R0	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	17.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		6	FLATPACK		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			DUAL	R-CDFP-F6		SOURCE
PTRA094252FCV1R0	Infineon Technologies																															NOT SPECIFIED	NOT SPECIFIED
PTFB072707FHV1R250	Infineon Technologies
CLY35-05P	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	14 V		FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND	2.8 A	2	FLANGE MOUNT	Other Transistors	METAL SEMICONDUCTOR	18 W	175 Cel	GALLIUM ARSENIDE	MATTE TIN	2.8 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified	HIGH RELIABILITY	e3
PTFB093608FVV2R250XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		6	FLATPACK		METAL-OXIDE SEMICONDUCTOR			SILICON			QUAD	R-CQFP-X6		SOURCE		HIGH RELIABILITY
PTFB211803EL-180W	Infineon Technologies
PTFB212503ELV1R250XTMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	17 dB	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		6	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			QUAD	R-CQFM-X6		SOURCE				NOT SPECIFIED	NOT SPECIFIED
CLY35-00H	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	14 V		FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND	2.8 A	2	FLANGE MOUNT	Other Transistors	METAL SEMICONDUCTOR	18 W	175 Cel	GALLIUM ARSENIDE	MATTE TIN	2.8 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified	HIGH RELIABILITY	e3
PTFB211501E-150W	Infineon Technologies
PXAC213308FVV1R2	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	15.5 dB	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		6	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			QUAD	R-CQFP-X6		SOURCE				NOT SPECIFIED	NOT SPECIFIED
GTVA101K42EVV1R2	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	NO		CERAMIC, METAL-SEALED COFIRED		125 V	17 dB	FLAT	RECTANGULAR	DEPLETION MODE	2	L BAND		4	FLANGE MOUNT		HIGH ELECTRON MOBILITY		225 Cel	GALLIUM NITRIDE		48 A	DUAL	R-CDFM-F4		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PXAC241702FCV1R250	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	15.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE
PTF210451F	Infineon Technologies	N-CHANNEL	SINGLE	YES	175 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	SQUARE	ENHANCEMENT MODE	1	S BAND		2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON	MATTE TIN		DUAL	S-CDFP-F2			Not Qualified	HIGH RELIABILITY	e3
PXAC261002FCV1R0XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	14.1 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTAC260302SC-30W	Infineon Technologies
PTVA123501ECV2R250XTMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V	16.5 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFM-F2		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTFB211503FLV2R0	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	16.5 dB	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			QUAD	R-CQFP-X4		SOURCE
PXAC203302FVV1R0XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	15 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTF10045	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON	MATTE TIN		DUAL	R-CDFM-F2		SOURCE	Not Qualified	HIGH RELIABILITY	e3
PTFB182557SH-250W	Infineon Technologies
PTFC262808FVV1R0XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	16.5 dB	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		6	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			QUAD	R-CQFP-X6		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PTFB090901EAV1XWSA1	Infineon Technologies
PXAD184218FVV1R0XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	15 dB	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		6	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			QUAD	R-CQFP-X6		SOURCE				NOT SPECIFIED	NOT SPECIFIED
PXFC192207FHV3R0	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	19 dB	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON			QUAD	R-CQFP-X4		SOURCE

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.