RF Power Field Effect Transistors (FET)
| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Package Body Material | Transistor Application | Minimum DS Breakdown Voltage | Minimum Power Gain (Gp) | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Minimum Operating Temperature | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
437 W |
PLASTIC/EPOXY |
250 V |
FLAT |
ROUND |
ENHANCEMENT MODE |
1 |
VERY HIGH FREQUENCY BAND |
10 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
10 A |
RADIAL |
O-PRFM-F4 |
SOURCE |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
20 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
1 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
TIN LEAD |
1 A |
DUAL |
R-PDSO-G2 |
SOURCE |
Not Qualified |
e0 |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
200 W |
PLASTIC/EPOXY |
AMPLIFIER |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
L BAND |
18 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
18 A |
DUAL |
R-PDFM-F4 |
SOURCE |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
95 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
7 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
TIN LEAD |
7 A |
DUAL |
R-PDSO-F2 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e0 |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
31.7 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
2.5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
MATTE TIN |
2.5 A |
DUAL |
R-PDSO-F2 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
250 |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
648 W |
PLASTIC/EPOXY |
200 V |
FLAT |
ROUND |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
40 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
40 A |
RADIAL |
O-PRFM-F4 |
SOURCE |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
.079 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
7 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
Matte Tin (Sn) - annealed |
7 A |
DUAL |
R-PDSO-G2 |
3 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
250 |
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|
|
STMicroelectronics |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS |
YES |
236 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
ULTRA HIGH FREQUENCY BAND |
14 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
14 A |
DUAL |
R-PDFM-F4 |
SOURCE |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
125 V |
12 dB |
FLAT |
ROUND |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
300 W |
200 Cel |
SILICON |
RADIAL |
O-PRFM-F4 |
Not Qualified |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
95 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
7 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
7 A |
DUAL |
R-PDSO-G2 |
SOURCE |
Not Qualified |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
95 W |
PLASTIC/EPOXY |
AMPLIFIER |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
8 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
MATTE TIN |
8 A |
DUAL |
R-PDSO-G2 |
3 |
SOURCE |
Not Qualified |
e3 |
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|
STMicroelectronics |
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|
STMicroelectronics |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
L BAND |
2 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
DUAL |
R-PDFM-F2 |
SOURCE |
NOT SPECIFIED |
NOT SPECIFIED |
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|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
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|
STMicroelectronics |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
73 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
5 A |
DUAL |
R-PDSO-F2 |
SOURCE |
Not Qualified |
e4 |
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|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
CERAMIC, METAL-SEALED COFIRED |
AMPLIFIER |
60 V |
FLAT |
ROUND |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
1.25 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
1.25 A |
RADIAL |
O-CRFM-F4 |
Not Qualified |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
31.7 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
2.5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
TIN LEAD |
2.5 A |
DUAL |
R-PDSO-F2 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e0 |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
59 W |
PLASTIC/EPOXY |
AMPLIFIER |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
5 A |
2 |
FLATPACK |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
5 A |
DUAL |
R-PDFP-F2 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||
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|
STMicroelectronics |
|||||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
31.7 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
2.5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
MATTE TIN |
2.5 A |
DUAL |
R-PDSO-F2 |
3 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
250 |
|||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
170 W |
PLASTIC/EPOXY |
AMPLIFIER |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
7 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
Matte Tin (Sn) - annealed |
12 A |
DUAL |
R-PDSO-F2 |
3 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
250 |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
20 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
1 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
1 A |
DUAL |
R-PDSO-G2 |
3 |
SOURCE |
Not Qualified |
e3 |
30 |
250 |
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|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
.079 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
7 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
MATTE TIN |
7 A |
DUAL |
R-PDSO-F2 |
3 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
250 |
|||||||||
|
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
4 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
TIN LEAD |
4 A |
DUAL |
R-PDSO-F2 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e0 |
||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
93 W |
CERAMIC, METAL-SEALED COFIRED |
AMPLIFIER |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
7 A |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
7 A |
DUAL |
R-CDFM-F2 |
SOURCE |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
79 W |
PLASTIC/EPOXY |
AMPLIFIER |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
7 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
7 A |
DUAL |
R-PDSO-G2 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
108 W |
PLASTIC/EPOXY |
AMPLIFIER |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
9 A |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
9 A |
DUAL |
R-PDFM-F2 |
SOURCE |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
73 W |
PLASTIC/EPOXY |
AMPLIFIER |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
5 A |
DUAL |
R-PDSO-G2 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
NOT SPECIFIED |
NOT SPECIFIED |
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|
STMicroelectronics |
|||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
L BAND |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
DUAL |
R-PDFM-F2 |
SOURCE |
Not Qualified |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
795 W |
1 |
40 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
40 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
CERAMIC, METAL-SEALED COFIRED |
AMPLIFIER |
60 V |
FLAT |
ROUND |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
3.9 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
3.9 A |
RADIAL |
O-CRFM-F4 |
Not Qualified |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
31.7 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
2.5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
TIN LEAD |
2.5 A |
DUAL |
R-PDSO-G2 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e0 |
|||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
79 W |
PLASTIC/EPOXY |
AMPLIFIER |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
9 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
MATTE TIN |
9 A |
DUAL |
R-PDSO-G2 |
3 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
250 |
|||||||||
|
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
52.8 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
4 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
MATTE TIN |
4 A |
DUAL |
R-PDSO-G2 |
3 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
250 |
|||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
648 W |
PLASTIC/EPOXY |
250 V |
FLAT |
ROUND |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
20 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
20 A |
RADIAL |
O-PRFM-F4 |
SOURCE |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
52.8 W |
PLASTIC/EPOXY |
AMPLIFIER |
65 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
4 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
165 Cel |
SILICON |
MATTE TIN |
4 A |
DUAL |
R-PDSO-F2 |
3 |
SOURCE |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
250 |
|||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
12 A |
DUAL |
R-PDSO-G2 |
SOURCE |
HIGH RELIABILITY |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||
|
|
STMicroelectronics |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
YES |
26.7 W |
PLASTIC/EPOXY |
AMPLIFIER |
25 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
ULTRA HIGH FREQUENCY BAND |
7 A |
5 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
7 A |
QUAD |
S-PQCC-N5 |
1 |
SOURCE |
Not Qualified |
e3 |
RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.
RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.
The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.