RF Power Field Effect Transistors (FET)

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
PD54008S-E-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		5 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
SD56060	STMicroelectronics																													NOT SPECIFIED	NOT SPECIFIED
PD84006-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	59 W	PLASTIC/EPOXY	AMPLIFIER	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	MATTE TIN	5 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY	e3	30	250
ST36015	STMicroelectronics
STAC3933	STMicroelectronics	N-CHANNEL	SINGLE	YES	795 W							1		20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel			20 A								NOT SPECIFIED	NOT SPECIFIED
STAC2942FW	STMicroelectronics																													NOT SPECIFIED	NOT SPECIFIED
RF5L1214750CB4	STMicroelectronics																				Nickel/Gold/Cobalt (Ni/Au/Co)				3
LET9045	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	MATTE TIN	9 A	DUAL	R-PDSO-G2	3	SOURCE	Not Qualified	HIGH RELIABILITY	e3	30	250
RF5L10111K0CB4	STMicroelectronics																				Nickel/Gold/Cobalt (Ni/Au/Co)				3
PD85035C	STMicroelectronics	N-CHANNEL	SINGLE	YES	108 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON	GOLD	8 A	DUAL	R-CDFM-F3		SOURCE	Not Qualified		e4
RF5L15120CB4	STMicroelectronics
LET20030C	STMicroelectronics	N-CHANNEL	SINGLE	YES	65 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	4 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		4 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
LET20030S	STMicroelectronics	N-CHANNEL	SINGLE	YES	140 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON			DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY
PD20010-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	59 W	PLASTIC/EPOXY	AMPLIFIER	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		5 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	ESD PROTECTION, HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
STAC4932F	STMicroelectronics	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON			DUAL	R-CDFP-F4		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
SD57060	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		7 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
PD84008S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		7 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
STAP85025	STMicroelectronics	N-CHANNEL	SINGLE	YES	79 W	PLASTIC/EPOXY	AMPLIFIER	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		7 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified	ESD PROTECTION		NOT SPECIFIED	NOT SPECIFIED
RF2L42008CG2	STMicroelectronics
RF2L27015CG2	STMicroelectronics
PD60004	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON			DUAL	R-PDSO-G2			Not Qualified
PD54003S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		4 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
PD84006L-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	31 W	PLASTIC/EPOXY	AMPLIFIER	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	5 A	DUAL	S-PDSO-N8	1	SOURCE	Not Qualified		e3
PD85050STR	STMicroelectronics
ST05250	STMicroelectronics	N-CHANNEL	SINGLE	YES		UNSPECIFIED	AMPLIFIER	90 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON			DUAL	R-XDFM-F4		SOURCE				NOT SPECIFIED	NOT SPECIFIED	40 pF
SD4931	STMicroelectronics	N-CHANNEL	SINGLE	YES	389 W	PLASTIC/EPOXY		200 V	FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	20 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		20 A	RADIAL	O-PRFM-F4			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
TSD2904	STMicroelectronics	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	60 V	FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		7 A	RADIAL	O-CRFM-F4			Not Qualified
SD3932	STMicroelectronics	N-CHANNEL	SINGLE	YES	500 W	PLASTIC/EPOXY	AMPLIFIER	250 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	20 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		20 A	DUAL	R-PDFM-F4		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
LET9130	STMicroelectronics	N-CHANNEL	SINGLE	YES	217 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	15 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		15 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified
PD54008S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		5 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
STAC2932F	STMicroelectronics	N-CHANNEL	SINGLE	YES	625 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	40 A	4	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		40 A	DUAL	R-CDFP-F4		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
ST50V10100	STMicroelectronics
SD57045-01	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		5 A	DUAL	R-PDFP-F2		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
PD20010TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	59 W	PLASTIC/EPOXY	AMPLIFIER	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		5 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	ESD PROTECTION, HIGH RELIABILITY		NOT SPECIFIED	NOT SPECIFIED
SD57120	STMicroelectronics	N-CHANNEL	SINGLE	YES	236 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	14 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		14 A	DUAL	R-PDFM-F4		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
PD54003TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	MATTE TIN	4 A	DUAL	R-PDSO-G2	1	SOURCE	Not Qualified	HIGH RELIABILITY	e3
STAP57030	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		4 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified
SD57030	STMicroelectronics	N-CHANNEL	SINGLE	YES	74 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		4 A	DUAL	R-PDFM-F2		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
PD54003	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	TIN LEAD	4 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY	e0
LET20015	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON		2 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY
PD57070STR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	95 W	PLASTIC/EPOXY	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	Matte Tin (Sn) - annealed	7 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified		e3	30	250
PD84010S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	95 W	PLASTIC/EPOXY	AMPLIFIER	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	165 Cel	SILICON	MATTE TIN	8 A	DUAL	R-PDSO-F2	3	SOURCE	Not Qualified		e3
LET9150	STMicroelectronics	N-CHANNEL	SINGLE	YES	269 W	PLASTIC/EPOXY	AMPLIFIER	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	20 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON	MATTE TIN	20 A	DUAL	R-PDFM-F4	1	SOURCE	Not Qualified		e3
PD54008L	STMicroelectronics	N-CHANNEL	SINGLE	YES	44 W	PLASTIC/EPOXY	AMPLIFIER	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	5 A	QUAD	S-PQCC-N5		SOURCE	Not Qualified	HIGH RELIABILITY	e0
LET9060F	STMicroelectronics	N-CHANNEL	SINGLE	YES	130 W	PLASTIC/EPOXY	AMPLIFIER	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	12 A	2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	200 Cel	SILICON		12 A	DUAL	R-PDFP-F2		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
PD57006-01	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	65 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	1 A	12	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1 A	QUAD	S-PQCC-N12		SOURCE	Not Qualified	HIGH RELIABILITY
RF5L15030CB2	STMicroelectronics
RF2L16080CF2	STMicroelectronics

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.