RF Power Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
SD2900	STMicroelectronics	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER	65 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	.83 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			.9 A	RADIAL	O-PRFM-F4			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SD2942	STMicroelectronics	N-CHANNEL	SINGLE	YES	500 W	PLASTIC/EPOXY		130 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	40 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			40 A	DUAL	R-PDFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SD2951-10	STMicroelectronics																																	NOT SPECIFIED	NOT SPECIFIED
SD2941-10	STMicroelectronics	N-CHANNEL	SINGLE	YES	389 W	PLASTIC/EPOXY		130 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	20 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			20 A	RADIAL	O-PRFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SD2918	STMicroelectronics	N-CHANNEL	SINGLE	NO	175 W	PLASTIC/EPOXY		125 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	6 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			6 A	RADIAL	O-PRFM-F4			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
PD55035S-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	95 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN	7 A	DUAL	R-PDSO-F2	1	SOURCE	Not Qualified	HIGH RELIABILITY		e3
PD55035	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	8.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		TIN LEAD	7 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY		e0
SD2922	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		125 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON			40 A	DUAL	R-PDFM-F4		SOURCE	Not Qualified
SD2920-02	STMicroelectronics	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			27.8 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified	HIGH RELIABILITY
SD2943W	STMicroelectronics	N-CHANNEL	SINGLE		648 W								1		40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel				40 A									NOT SPECIFIED	NOT SPECIFIED
PD55035TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	95 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON			7 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
PD55003-01	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	40 V		NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	12	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2.5 A	QUAD	S-PQCC-N12		SOURCE	Not Qualified	HIGH RELIABILITY
SD2933W	STMicroelectronics	N-CHANNEL	SINGLE	YES	648 W								1		40 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		200 Cel				40 A									NOT SPECIFIED	NOT SPECIFIED
SD2923	STMicroelectronics	N-CHANNEL	SINGLE	NO	648 W	PLASTIC/EPOXY		125 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	40 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			40 A	RADIAL	O-PRFM-F4		SOURCE	Not Qualified
SD2921-10	STMicroelectronics	N-CHANNEL	SINGLE	NO	389 W	PLASTIC/EPOXY		125 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	20 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			20 A	RADIAL	O-PRFM-F4			Not Qualified
SD2902	STMicroelectronics	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER	65 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2.5 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			2.5 A	RADIAL	O-PRFM-F4			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SD2931	STMicroelectronics	N-CHANNEL	SINGLE	NO	292 W	PLASTIC/EPOXY		125 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	20 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	20 A	RADIAL	O-PRFM-F4			Not Qualified			e0
SD2903	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			5 A	DUAL	R-PDFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SD2904	STMicroelectronics	N-CHANNEL	SINGLE	NO		PLASTIC/EPOXY	AMPLIFIER	65 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			5 A	RADIAL	O-PRFM-F4			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
SD2931-12W	STMicroelectronics	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		125 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON			20 A	RADIAL	O-PRFM-F4							NOT SPECIFIED	NOT SPECIFIED
SD2920	STMicroelectronics	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V		FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			13.9 A	RADIAL	O-CRFM-F4			Not Qualified	HIGH RELIABILITY
PD55008	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	40 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		TIN LEAD	4 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY		e0
SD2931-10	STMicroelectronics	N-CHANNEL	SINGLE	YES	389 W	PLASTIC/EPOXY		125 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	20 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		NICKEL PALLADIUM GOLD	20 A	RADIAL	O-PRFM-F4		SOURCE	Not Qualified			e4
SD2921	STMicroelectronics	N-CHANNEL	SINGLE	NO	219 W	PLASTIC/EPOXY		125 V		FLAT	ROUND	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	16 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON			16 A	RADIAL	O-PRFM-F4			Not Qualified
PD55035STR1-E	STMicroelectronics
AFT21S230-12SR3	NXP Semiconductors																																	40	260
BLA0912-250	NXP Semiconductors	N-CHANNEL	SINGLE	YES	700 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	75 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				DUAL	R-CDFM-F2	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
935345451598	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V	17 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	GALLIUM NITRIDE	-55 Cel			DUAL	R-CDFM-F2		SOURCE							1 pF
935338749528	NXP Semiconductors																							TIN				3					e3	40	260
BLA1011-300	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	15 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			15 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
934063284112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	100 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON			45 A	DUAL	R-CDFM-F4		SOURCE
934064686112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	SQUARE	ENHANCEMENT MODE	1	S BAND		6	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				QUAD	S-CQFM-F6		SOURCE
MRF9045LR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				DUAL	R-CDFM-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED
935317972515	NXP Semiconductors																							TIN				3					e3	40	260
BLS6G3135-20	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	60 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON			2.1 A	DUAL	R-CDFM-F2	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
935310859128	NXP Semiconductors																																	40	260
935322358528	NXP Semiconductors																							TIN				3					e3	40	260
934061174118	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLATPACK		METAL-OXIDE SEMICONDUCTOR			SILICON			16.5 A	DUAL	R-CDFP-F2		SOURCE
BLF8G24LS-150GV	NXP Semiconductors
934063448112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	100 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON			2.5 A	DUAL	R-CDFM-F2		SOURCE
MRFG35010NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	15 V		NO LEAD	RECTANGULAR	DEPLETION MODE	1	S BAND		4	SMALL OUTLINE	Other Transistors	HIGH ELECTRON MOBILITY	22.7 W	85 Cel	GALLIUM ARSENIDE		Matte Tin (Sn)		QUAD	R-PQSO-N4	1	SOURCE	Not Qualified			e3	40	260
AFT09S200W02GNR3	NXP Semiconductors																							TIN				3					e3	40	260
MRF24300NR3	NXP Semiconductors																							TIN				3					e3	40	260
MRF7S24250NR3	NXP Semiconductors																							TIN				3					e3	40	260
MRF1550NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	165 W	PLASTIC/EPOXY	AMPLIFIER	40 V		C BEND	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	12 A	6	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		Matte Tin (Sn)	12 A	DUAL	R-PDFM-C6	3	SOURCE	Not Qualified		TO-272AA	e3	40	260
934063499112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON			28 A	DUAL	R-CDFM-F2		SOURCE
934064301112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 3 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	3	L BAND		8	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON			64 A	DUAL	R-CDFM-F8		SOURCE
MRFX1K80H-27MHZ	NXP Semiconductors																																	NOT SPECIFIED	NOT SPECIFIED

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.