STMicroelectronics - RF4L15400CB4

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 200 Cel; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Maximum Drain Current (Abs) (ID): 64 A; Maximum Drain Current (ID): 64 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Case Connection: SOURCE; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Package Style (Meter): CHIP CARRIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: FLAT; Highest Frequency Band: S BAND;

GS66508T-MR by Gan Systems is a N-CHANNEL FET for SWITCHING applications. It operates at 650V with 30A ID, suitable for VERY HIGH FREQUENCY BAND. This ENHANCEMENT MODE transistor in CHIP CARRIER package uses GALLIUM NITRIDE tech and can withstand -55 to 150 °C temperatures.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;

NXP Semiconductors A3G26H502W17SR3 is an N-CHANNEL RF FET with 150V DS breakdown voltage, 11.3 dB power gain, and GaN element material. Primarily used in S Band applications as a depletion mode amplifier with flatpack package style for surface mount assembly.

RF Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; No. of Elements: 1;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;