RF Power Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
2SK3075	Toshiba	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	30 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	4	MICROWAVE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 A	QUAD	R-CQMW-F4		SOURCE	Not Qualified
AFT09H310-03SR6	NXP Semiconductors	N-CHANNEL	SINGLE										1					FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel														40	260
BLF246	NXP Semiconductors	N-CHANNEL	SINGLE	NO	130 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	16 dB	FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	13 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	130 W	200 Cel	SILICON			.3 ohm	13 A	RADIAL	O-CRFM-F4	NOT APPLICABLE	ISOLATED	Not Qualified	LOW NOISE			NOT SPECIFIED	NOT SPECIFIED
BLF246B	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	130 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	VERY HIGH FREQUENCY BAND	8 A	8	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	130 W	200 Cel	SILICON			.75 ohm	8 A	DUAL	R-CDFM-F8	NOT APPLICABLE	ISOLATED	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
BLF246B,112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	130 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	VERY HIGH FREQUENCY BAND	8 A	8	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	130 W	200 Cel	SILICON			.75 ohm	8 A	DUAL	R-CDFM-F8		ISOLATED	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
BLM6G22-30G,118	NXP Semiconductors																							Tin (Sn)					3					e3	30	245
ARF463AP1G	Microchip Technology	N-CHANNEL	SINGLE	NO	180 W	PLASTIC/EPOXY	AMPLIFIER	500 V		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER		9 A	SINGLE	R-PSFM-T3	1	SOURCE	Not Qualified		TO-247AD	e1
MRF6VP2600HR6	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	110 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified	ESD PROTECTED			40	260
TGI7785-25L	Toshiba	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	50 V		FLAT	RECTANGULAR	DEPLETION MODE	1	X BAND	4.5 A	2	FLANGE MOUNT	FET RF Small Signal	HIGH ELECTRON MOBILITY	70 W	175 Cel	GALLIUM NITRIDE				7.5 A	DUAL	R-CDFM-F2		SOURCE
VRF151G	Microchip Technology	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	500 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	170 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	VERY HIGH FREQUENCY BAND	40 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		TIN SILVER COPPER		36 A	DUAL	R-CDFM-F4	1	SOURCE	Not Qualified			e1
BLF8G24LS-200PN	NXP Semiconductors
MRF255	Motorola	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	36 V	13 dB	FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	22 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 W	200 Cel	SILICON				22 A	RADIAL	O-CRFM-F4			Not Qualified
QPD1000	Qorvo	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER			NO LEAD	RECTANGULAR	DEPLETION MODE	1	L BAND		8	SMALL OUTLINE		HIGH ELECTRON MOBILITY			SILICON CARBIDE		Nickel/Palladium/Gold (Ni/Pd/Au)		3 A	DUAL	R-PDSO-N8	3	SOURCE				e4	30	260
A2T23H300-24SR6	NXP Semiconductors																																		40	260
A5G35H120NT2	NXP Semiconductors																												3						40	260
CGHV37400F	Wolfspeed
CGH40045F-TB	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE		NICKEL GOLD			DUAL	R-CDFM-F2		SOURCE	Not Qualified			e4
CGHV59350F	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V	11.5 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		125 Cel	GALLIUM NITRIDE	-40 Cel			24 A	DUAL	R-CDFM-F2
MRFE6VP100HSR5	NXP Semiconductors	N-CHANNEL																FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel														40	260
BLF888D	NXP Semiconductors
BLP10H605AZ	Ampleon Netherlands B V	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		PLASTIC/EPOXY	AMPLIFIER	104 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		12	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-PDSO-N12		SOURCE			MO-229		NOT SPECIFIED	NOT SPECIFIED		IEC-60134
MMRF5018HSR5	NXP Semiconductors																																		40	260
MRF1517NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	62.5 W	PLASTIC/EPOXY	AMPLIFIER	25 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN		4 A	QUAD	R-PQSO-N4	3	SOURCE	Not Qualified			e3	40	260
MRF1570FNT1	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	165 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		8	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		Matte Tin (Sn)			DUAL	R-PDFM-F8	3	SOURCE	Not Qualified		TO-272	e3	40	260
MRF8P20165WHSR5	Freescale Semiconductor	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON					DUAL	R-CDFP-F4		SOURCE	Not Qualified				40	260
MRFE6VP6300HR3	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	130 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified				40	260
MRFE6VP6300HR5	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	130 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified				40	260
PD55008L-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	19.5 W	PLASTIC/EPOXY	AMPLIFIER	40 V		NO LEAD	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				5 A	QUAD	S-PQCC-N5		SOURCE	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
PD84002	STMicroelectronics	N-CHANNEL	SINGLE	YES	6 W	PLASTIC/EPOXY	AMPLIFIER	25 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN		2 A	SINGLE	R-PSSO-F3	1	SOURCE	Not Qualified			e3
PTFA080551EV4R250XTMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	18 dB	FLAT	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	S-CDFM-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED
PTFA080551FV4R250XTMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	18 dB	FLAT	SQUARE	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLATPACK		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	S-CDFP-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED
PTFA091201EV4R250XTMA1	Infineon Technologies																																		NOT SPECIFIED	NOT SPECIFIED
STAC2942BW	STMicroelectronics	N-CHANNEL	SINGLE		625 W								1		40 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		200 Cel					40 A									NOT SPECIFIED	NOT SPECIFIED
A2V07H400-04NR3	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS	YES		PLASTIC/EPOXY	AMPLIFIER	105 V	18.9 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON	-40 Cel	TIN			DUAL	R-PDFP-F4	3	SOURCE				e3	40	260
AFV10700HSR5	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V	18 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON	-55 Cel				DUAL	R-CDFP-F4		SOURCE					40	260	1.16 pF
BLF369	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BLF6G27S-45	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND	20 A	2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				20 A	DUAL	R-CDFP-F2	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BLF861	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				18 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified
BLF878	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	89 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified	HIGH RELIABILITY			30	260
CGH55015F1	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE		GOLD NICKEL			DUAL	R-CDFM-F2		SOURCE	Not Qualified			e4
CGHV59070F	Wolfspeed	N-CHANNEL	SINGLE	NO		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	150 V	15.55 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE	-40 Cel	Gold/Nickel (Au/Ni)		6.3 A	DUAL	R-CDFM-F2		SOURCE				e4			.26 pF
EGNC210MK	Sumitomo Electric Industries	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	160 V		FLAT	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE					DUAL	R-CDFM-F2		SOURCE	Not Qualified	HIGH RELIABILITY
IXZR08N120	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	1200 V		THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN SILVER COPPER		8 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1
MMRF1015GNR1	NXP Semiconductors																							TIN					3					e3	40	260
MMRF1320NR1	NXP Semiconductors																							TIN					3					e3	40	260
MMRF5300NR5	NXP Semiconductors																												3						40	260
MRF1511NT1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	62.5 W	PLASTIC/EPOXY	AMPLIFIER	40 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN		4 A	QUAD	R-PQSO-N4	3	SOURCE	Not Qualified			e3	40	260
PTFA092201EV4R250XTMA1	Infineon Technologies																																		NOT SPECIFIED	NOT SPECIFIED

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.