STMicroelectronics - ST05250

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 625 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: SOURCE;

N-CHANNEL; Surface Mount: YES; Minimum DS Breakdown Voltage: 10 V; Operating Mode: DEPLETION MODE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Transistor Element Material: SILICON; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-30 Code: R-PQSO-N4; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; JESD-30 Code: R-CDFP-F4;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Application: AMPLIFIER; Package Style (Meter): SMALL OUTLINE;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Terminal Position: DUAL;

NXP Semiconductors' MRFE6S9060NR1 is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a 66V DS breakdown voltage and can handle ultra-high frequency bands. The transistor, made of silicon MOSFET technology, has a max operating temperature of 225°C and features a flange mount package style.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 24 A; Transistor Element Material: GALLIUM NITRIDE; No. of Elements: 1;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Case Connection: SOURCE; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 217 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: 5 W; Operating Mode: DEPLETION MODE; Package Style (Meter): FLANGE MOUNT;

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4; Transistor Application: AMPLIFIER;