Infineon Technologies Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
AUIRF3315S	Infineon Technologies	N-CHANNEL	SINGLE	YES	94 W							1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							21 A			1
AUIRF3805S-7P	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1000 A	680 mJ	240 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0026 ohm	160 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE		e3	30	260
AUIRF3805S-7PTRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1000 A	680 mJ	240 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0026 ohm	160 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE		e3
AUIRF7304QTR	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	17 A		4.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.09 ohm	4.3 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE	MS-012AA	e3	40	260
AUIRF7319Q	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.029 ohm	6.5 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MS-012AA	e3
AUIRFN8401TR	Infineon Technologies																														1
AUIRFR2905Z	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	55 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0145 ohm	42 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY	TO-252AA	e3	30	260
AUIRFR8403TRLARMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	520 A	114 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel			.0031 ohm	100 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
AUIRFS3004TRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	380 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1310 A	300 mJ	195 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.00175 ohm	195 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3
AUIRFSL8403	Infineon Technologies	N-CHANNEL	SINGLE	NO	99 W							1			123 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							123 A			1
AUIRL1404Z	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	790 A	490 mJ	180 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0031 ohm	160 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
AUIRL7736M2TR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	63 W	UNSPECIFIED	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	450 A	119 mJ	112 A	5	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.003 ohm	22 A	BOTTOM	R-XBCC-N5	1	DRAIN	Not Qualified	HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
AUIRLR024N	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	68 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.08 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE	TO-252AA	e3	30	260
AUIRLS4030	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	370 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	730 A	305 mJ	180 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0043 ohm	180 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
BSB017N03LX3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	METAL	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	225 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel			.0017 ohm	147 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified					260
BSB104N08NP3GXUSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		METAL	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	110 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON				Silver/Nickel (Ag/Ni)	.0104 ohm	13 A	BOTTOM	R-MBCC-N3	3	DRAIN				e4	NOT SPECIFIED	NOT SPECIFIED
BSC005N03LS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1731 A	900 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.00095 ohm	433 A	DUAL	R-PDSO-F8	1	DRAIN				e3			300 pF	IEC-61249-2-21; IEC-68-1
BSC026N04LS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	50 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0036 ohm	23 A	DUAL	R-PDSO-F5	1	DRAIN				e3
BSC031N06NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	298 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0031 ohm	22 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3
BSC072N03LDG	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	57 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	90 mJ	20 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0094 ohm	11.5 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
BSC0901NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	80 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0024 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3
BSC0993NDATMA1	Infineon Technologies	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	68 A	14 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		TIN	.007 ohm	17 A	DUAL	R-PDSO-N8						e3
BSC110N15NS5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	304 A	100 mJ	76 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.011 ohm	76 A	DUAL	R-PDSO-F5	1	DRAIN				e3			23 pF
BSC110N15NS5SC	Infineon Technologies
BSC118N10NSGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	280 A	155 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0118 ohm	11 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3
BSC119N03MSCG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	156 A	10 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0119 ohm	11 A	DUAL	R-PDSO-F8		DRAIN	Not Qualified			e3
BSO200P03SHXUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36.4 A	98 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.02 ohm	7.4 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
BSP129L6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	6 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3		260
BSP373	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	45 mJ		4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.8 W	150 Cel	SILICON	60 ns	-55 Cel	195 ns	MATTE TIN	.3 ohm	1.7 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	AVALANCHE RATED		e3			105 pF	AEC-Q101
BSP373L6327HTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	45 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.8 W	150 Cel	SILICON	60 ns	-55 Cel	195 ns	MATTE TIN	.3 ohm	1.7 A	DUAL	R-PDSO-G4		DRAIN		AVALANCHE RATED		e3			105 pF	AEC-Q101
BSP89L6327XT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	6 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
BSZ063N04LS6ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	25 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0088 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3
BSZ120P03NS3EG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	73 mJ	40 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.02 ohm	11 A	DUAL	S-PDSO-N8	3	DRAIN	Not Qualified	ESD PROTECTED				260
IPA50R380CEXKSA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	210 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.38 ohm		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA60R080P7XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	118 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		TIN	.08 ohm		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA60R125CPXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	82 A	708 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.125 ohm	25 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IPA60R280P7SXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	38 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON		-40 Cel		TIN	.28 ohm		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA65R099C6XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	115 A	845 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.099 ohm		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
IPA65R150CFDXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	34.7 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	614 mJ	22.4 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Tin (Sn)	.15 ohm	22.4 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
IPA80R1K4P7XKSA1	Infineon Technologies																									TIN										e3
IPB011N04NGXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1260 A	610 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0011 ohm	180 A	SINGLE	R-PSSO-G6		DRAIN		AVALANCHE RATED, ULTRA-LOW RESISTANCE			NOT SPECIFIED	NOT SPECIFIED
IPB015N04LGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	865 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0018 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-263AB	e3
IPB015N04NGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	865 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0015 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IPB020NE7N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	1100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.002 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IPB024N10N5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	502 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel		TIN	.0024 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263	e3
IPB073N15N5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	456 A	130 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0073 ohm	114 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3
IPB100N04S204ATMA4	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	810 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0033 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3
IPB120N04S401ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	750 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0015 ohm	120 A	SINGLE	R-PSSO-G2	1				TO-263AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.