Infineon Technologies Power Field Effect Transistors (FET) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IPB024N08N5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	374 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0024 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3
IPB029N06N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	235 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0032 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IPB042N10N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	340 mJ	100 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0042 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
IPB042N10N3GE8187ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	340 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0042 ohm	100 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB
IPB065N03LGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	60 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0095 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-263AB	e3
IPB100N06S205ATMA4	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	810 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0047 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3
IPB180N04S400ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	1250 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.00098 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN		ULTRA-LOW RESISTANCE	TO-263	e3				AEC-Q101
IPB180N04S401ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	550 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0013 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN		ULTRA-LOW RESISTANCE	TO-263	e3				AEC-Q101
IPB60R045P7ATMA1	Infineon Technologies																						Tin (Sn)					1					e3	NOT SPECIFIED	NOT SPECIFIED
IPB60R125CPATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	82 A	708 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.125 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IPB60R180P7ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	53 A	56 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	-55 Cel	TIN	.18 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3
IPB60R360P7ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A	27 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	-55 Cel	TIN	.36 ohm		SINGLE	R-PSSO-G2	1				TO-263AB	e3
IPB80P04P407XT	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	31 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON			.0077 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB		NOT SPECIFIED	NOT SPECIFIED
IPB80P04P4L06XT	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	31 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON			.0064 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN		LOGIC LEVEL COMPATIBLE	TO-263AB		NOT SPECIFIED	NOT SPECIFIED
IPB90N04S4-02	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	475 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0021 ohm	90 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3		260
IPD036N04LGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	94 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	55 mJ	90 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.0049 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3
IPD088N06N3GBTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	43 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0088 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IPD100N04S4-02	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	440 mJ	100 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.002 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260
IPD30N06S223ATMA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.023 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3
IPD50N04S308ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	111 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0075 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3				AEC-Q101
IPD50R399CPATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	215 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.399 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3
IPD60R1K0PFD7SAUMA1	Infineon Technologies																						Tin (Sn)					3					e3	NOT SPECIFIED	NOT SPECIFIED
IPD60R1K5CEATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	49 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	26 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-40 Cel		1.5 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
IPD60R400CEATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	-40 Cel		.4 ohm		SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
IPD80R1K0CEATMA1	Infineon Technologies																						TIN					1					e3
IPD80R600P7ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	20 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	-55 Cel	TIN	.6 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3
IPD90N06S4L03ATMA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	331 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	-55 Cel	TIN	.0035 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3				AEC-Q101
IPD90N10S4L06ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	250 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.0066 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3			300 pF	AEC-Q101
IPI024N06N3GXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	634 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0024 ohm	120 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
IPL60R185C7AUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	45 A	53 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-40 Cel	TIN	.185 ohm	13 A	SINGLE	S-PSSO-N4	2A	DRAIN				e3
IPL60R210P6AUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	52 A	419 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.21 ohm		SINGLE	S-PSSO-N4	2A	DRAIN				e3
IPL65R099C7AUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	650 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	100 A	118 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.099 ohm	21 A	SINGLE	S-PSSO-N4	2A	DRAIN				e3
IPLK60R360PFD7ATMA1	Infineon Technologies																						Tin (Sn)					1					e3	NOT SPECIFIED	NOT SPECIFIED
IPP023N10N5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	979 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0023 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB	e3
IPP028N08N3GXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	1430 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0028 ohm	100 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IPP052NE7N3GXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	370 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0052 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IPP60R099C6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	278 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	112 A	796 mJ	37.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.099 ohm	37.9 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IPP65R225C7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	41 A	48 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.225 ohm	11 A	SINGLE	R-PSFM-T3		DRAIN		HIGH RELIABILITY	TO-220AB	e3
IPP65R225C7XKSA1	Infineon Technologies																						TIN										e3
IPP65R310CFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34.4 A	290 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.31 ohm	11.4 A	SINGLE	R-PSFM-T3					TO-220AB	e3
IPP65R310CFDAAKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34.4 A	290 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.31 ohm	11.4 A	SINGLE	R-PSFM-T3				HIGH RELIABILITY	TO-220AB	e3				AEC-Q101
IPP65R310CFDAXK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34.4 A	290 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON			.31 ohm	11.4 A	SINGLE	R-PSFM-T3				HIGH RELIABILITY	TO-220AB		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
IPP80N06S407AKSA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	71 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0071 ohm	80 A	SINGLE	R-PSFM-T3	1	DRAIN			TO-220AB	e3
IPS105N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	245 A	30 mJ	35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0105 ohm	35 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-251	e3
IPT019N08N5ATMA1	Infineon Technologies																						Tin (Sn)					1					e3	NOT SPECIFIED	NOT SPECIFIED
IPT029N08N5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	676 A	124 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON	-55 Cel	TIN	.0029 ohm	52 A	SINGLE	R-PSSO-F2	1	DRAIN				e3
IPW60R024CFD7XKSA1	Infineon Technologies																						Tin (Sn)										e3	NOT SPECIFIED	NOT SPECIFIED
IPW60R031CFD7XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	277 A	326 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.031 ohm	63 A	SINGLE	R-PSFM-T3					TO-247	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.